[특허]Method for determining the minority carrier surface recombination lifetime constant (ts <B>of a specimen of s

[미국특허] Method for determining the minority carrier surface recombination lifetime constant (ts of a specimen of s 원문보기

IPC분류정보

국가/구분 United States(US) Patent 등록

국제특허분류(IPC7판)

G01R-031/26

출원번호 US-0159334 (1993-11-29)

발명자 / 주소

Goldfarb William C. (Melrose MA)

출원인 / 주소

Semitest Inc. (Billerica MA 02)

인용정보 피인용 횟수 : 26 인용 특허 : 0

초록 ▼

A method is provided for determining the minority carrier surface recombination lifetime constant (ts) of a specimen of semiconductor material. The specimen is positioned between a pair of electrodes, the specimen being disposed on one of the electrodes and being spaced form the other electrode. A s

A method is provided for determining the minority carrier surface recombination lifetime constant (ts) of a specimen of semiconductor material. The specimen is positioned between a pair of electrodes, the specimen being disposed on one of the electrodes and being spaced form the other electrode. A signal is provided corresponding to the capacitance between the specimen and the electrode spaced from the specimen. A region of the surface of the specimen is illuminated with a beam of light of predetermined wavelengths and which is intensity modulated at a predetermined frequency and varying in intensity over a predetermined range. A fixed bias voltage Vg applied between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion,. A signal is provided representing the ac photocurrent induced at the region of the specimen illuminated by the light beam. The intensity of the light beam and frequency of modulation of the light beam are selected such that the ac photocurrent is nearly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam. A signal is provided corresponding to the illumination intensity of the beam of light. The surface minority carrier recombination time constant (ts) is then determined using the ac photocurrent capacitance and illumination intensity information.

대표청구항 ▼

A method of determining the minority carrier surface recombination lifetime constant (ts) of a specimen of semiconductor material, the specimen having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electr

A method of determining the minority carrier surface recombination lifetime constant (ts) of a specimen of semiconductor material, the specimen having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, said specimen being disposed on one of said electrodes and spaced from said other electrode, c. providing a signal representing to the capacitance between the specimen and the electrode spaced from the specimen, d. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency and varying in intensity over a predetermined range of values, e. applying a fixed bias voltage (Vg) between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion, f. providing a signal representing the ac photocurrent at the region of the specimen illuminated by the light beam, g. the intensity of the light beam and frequency of modulation of the light beam being such that the ac photocurrent is nearly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, h. providing a signal corresponding to the illumination intensity of the beam of light, and then, i. determining the surface minority carrier recombination time constant (ts) using said ac photocurrent, capacitance and illumination intensity information.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
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A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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연합인증

[미국특허] Method for determining the minority carrier surface recombination lifetime constant (ts of a specimen of s 원문보기

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대표청구항 ▼

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이 특허를 인용한 특허 (26)

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선택된 텍스트

국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G01R-031/26
출원번호	US-0159334 (1993-11-29)
발명자 / 주소	Goldfarb William C. (Melrose MA)
출원인 / 주소	Semitest Inc. (Billerica MA 02)
인용정보	피인용 횟수 : 26 인용 특허 : 0

연합인증

[미국특허] Method for determining the minority carrier surface recombination lifetime constant (ts of a specimen of s 원문보기

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