초록 ▼

A method of determining charge associated with traps present in a semiconductor oxide interface is described. The method includes the steps of depositing a dose of charge over a surface of the oxide and measuring a resultant value of surface potential barrier at the portion of the surface. From the

A method of determining charge associated with traps present in a semiconductor oxide interface is described. The method includes the steps of depositing a dose of charge over a surface of the oxide and measuring a resultant value of surface potential barrier at the portion of the surface. From the measured value of surface charge and deposited charge dose a value of charge associated with the interface trap is determined. The method also includes determining space charge corresponding to the measured surface potential barrier of the portion of the substrate. With the determined space charge and known deposited charge the interface trapped charge is determined by noting that the change in interface trapped charge is related to the negative of the changes in space charge and deposited charge.

대표청구항 ▼

[ We claim:] [1.] A method of determining charge associated with traps present in a semiconductor oxide interface between a semiconductor wafer and an oxide layer disposed on the wafer, the method comprising the steps of:depositing a dose of charge over a portion of a surface of the oxide layer;meas

[ We claim:] [1.] A method of determining charge associated with traps present in a semiconductor oxide interface between a semiconductor wafer and an oxide layer disposed on the wafer, the method comprising the steps of:depositing a dose of charge over a portion of a surface of the oxide layer;measuring a resultant value of surface potential barrier at the portion of the surface of the oxide layer; anddetermining a value of charge associated with interface trap from the surface potential barrier and the deposited charge dose.