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[미국특허] Measurement of the interface trap charge in an oxide semiconductor layer interface 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01R-031/26
  • G01R-001/04
출원번호 US-0893404 (1997-07-11)
발명자 / 주소
  • Lagowski Jacek
  • Edelman Piotr
  • Wilson Marshall D.
출원인 / 주소
  • Semiconductor Diagnostics, Inc.
대리인 / 주소
    Fish & Richardson P.C.
인용정보 피인용 횟수 : 43  인용 특허 : 29

초록

A method of determining charge associated with traps present in a semiconductor oxide interface is described. The method includes the steps of depositing a dose of charge over a surface of the oxide and measuring a resultant value of surface potential barrier at the portion of the surface. From the

대표청구항

[ We claim:] [1.] A method of determining charge associated with traps present in a semiconductor oxide interface between a semiconductor wafer and an oxide layer disposed on the wafer, the method comprising the steps of:depositing a dose of charge over a portion of a surface of the oxide layer;meas

이 특허에 인용된 특허 (29)

  1. Reiss Leszek (Lexington MA) Kamieniecki Emil (Lexington MA), Apparatus and method for making surface photovoltage measurements of a semiconductor.
  2. Mallory Chester (Campbell CA) Perloff David S. (Sunnyvale CA) Pham Hung V. (San Jose CA) Droblisch Sandor (Monte Sereno CA), Apparatus and methods for semiconductor wafer testing.
  3. Tigelaar Howard L. (Allen TX) Moslehi Mehrdad M. (Dallas TX), Apparatus for and method of rapid testing of semiconductor components at elevated temperature.
  4. Kamieniecki Emil (Lexington MA) Goldfarb William C. (Melrose MA) Wollowitz Michael (Cambridge MA), Apparatus for making surface photovoltage measurements of a semiconductor.
  5. Kamieniecki Emil (Lexington MA) Goldfarb William C. (Melrose MA) Wollowitz Mike (Cambridge MA), Apparatus for making surface photovoltage measurements of a semiconductor.
  6. Honma Noriaki (Nishitama JPX) Munakata Chusuke (Nishitama JPX), Apparatus for measuring carrier lifetimes of a semiconductor wafer.
  7. Verkuil Roger L. (Wappingers Falls NY) Fung Min-Su (LaGrangeville NY), Contactless corona-oxide-semiconductor Q-V mobile charge measurement method and apparatus.
  8. Verkuil Roger L. (Wappinger Falls NY), Contactless technique for measuring epitaxial dopant concentration profiles in semiconductor wafers.
  9. Curtis Huntington W. (Chelsea NY) Fung Min-Su (LaGrangeville NY) Verkuil Roger L. (Wappingers Falls NY), Contactless technique for semicondutor wafer testing.
  10. Szedon John R. (McKeesport PA), Corona charging for testing reliability of insulator-covered semiconductor devices.
  11. Halbout Jean-Marc (Larchmont NY) Ketchen Mark B. (Hadley MA) Moskowitz Paul A. (Yorktown Heights NY) Scheuermann Michael R. (Somers NY), Detachable high-speed opto-electronic sampling probe.
  12. Lagowski Jacek (Tampa FL) Jastrzebski Lubek (Tampa FL) Kontkiewicz Andrzej (Warszwawa PLX) Edelman Piotr (Tampa FL), Determining long minority carrier diffusion lengths.
  13. Cooper Douglas W. (Millwood NY) Wolfe Henry L. (Pleasant Valley NY) Yeh James T. C. (Katonah NY), Electrostatic removal of contaminants.
  14. Devereaux Kevin M. (Boise ID) Bunn Mark (Boise ID) Higgins Brian (Boise ID), Fixture for burn-in testing of semiconductor wafers.
  15. Edelman Piotr ; Hoff Andrew M. ; Jastrzebski Lubek ; Lagowski Jacek, Measurement of the mobile ion concentration in the oxide layer of a semiconductor wafer.
  16. Goldstein Bernard (Princeton NJ) Dresner Joseph (Princeton NJ) Szostak Daniel J. (Mercerville NJ), Method and apparatus for determining minority carrier diffusion length in semiconductors.
  17. Moore Arnold R. (Princeton NJ), Method and apparatus for determining minority carrier diffusion length in semiconductors.
  18. Lagowski Jacek J. (11504 Norval Pl. Tampa FL 33617), Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage.
  19. Lagowski Jacek J. (7 Rag Rock Dr. Woburn MA 01801), Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage.
  20. Mitros Jozef C. (Austin TX), Method for detecting mobile ions in a semiconductor device.
  21. Andrews ; Jr. John M. (Watchung NJ) Lifshitz Nadia (Bridgewater NJ) Smolinsky Gerald (Madison NJ), Method of manufacturing semiconductor devices involving the detection of impurities.
  22. Garcia Agustin M. (Allentown PA) Lawrence Cris W. (Allentown PA) Thoma Morgan J. (Macungie PA), Method of measuring mobile ion concentration in semiconductor devices.
  23. Williams Richard (Princeton NJ) Woods Murray H. (Palo Alto CA), Method of testing radiation hardness of a semiconductor device.
  24. Gittleman Jonathan I. (Lawrenceville NJ) Bozowski Stanley (Trenton NJ), Non-destructive testing of SOS wafers using surface photovoltage measurements.
  25. Kamieniecki Emil (Lexington MA), Noninvasive method and apparatus for characterization of semiconductors.
  26. Harvey George T. (Princeton NJ) Heutmaker Michael S. (Trenton NJ) Kuzyk Mark G. (Pullman WA) Singer Kenneth D. (Pepper Pike OH), Optical probing method and apparatus.
  27. Castellano ; Jr. Anthony J. (New Fairfield CT) DiStefano Thomas H. (Bronxville NY) Olyha ; Jr. Robert S. (Yonkers NY), Photovoltaic imaging for large area semiconductors.
  28. Anderson James C. (Santa Rosa CA) Phillips Brian P. (Glenn Ellen CA) Honek Charles (Santa Rosa CA), Probe card system and method.
  29. Dawson Robert (Austin TX), System and method for measuring charge traps within a dielectric layer formed on a semiconductor wafer.

이 특허를 인용한 특허 (43)

  1. Sidner, Diane W.; Fruth, John R.; Dahlgnist, Dean M., Apparatus and method for determining leakage current between a first semiconductor region and a second semiconductor region to be formed therein.
  2. Schulze, Mark A.; Usry, William R., Calibration of non-vibrating contact potential difference measurements to detect surface variations that are perpendicular to the direction of sensor motion.
  3. Tom G. Miller ; Roger L. Verkuil ; Gregory S. Horner, Contactless method for measuring total charge of an oxide layer on a semiconductor wafer using corona charge.
  4. Tom G. Miller ; Roger L. Verkuil ; Gregory S. Horner, Contactless total charge measurement with corona.
  5. Lagowski, Jacek; Wilson, Marshall D.; D'Amico, John; Savtchouk, Alexandre; Jastrzebski, Lubomir L., Determining composition of mixed dielectrics.
  6. Potter, Michael D., High temperature embedded charge devices and methods thereof.
  7. Steele, M. Brandon; Hawthorne, Jeffrey Alan, Inspection system and apparatus.
  8. Steele,M. Brandon; Hawthorne,Jeffrey Alan, Inspection system and apparatus.
  9. Steele,M. Brandon; Hawthorne,Jeffrey Alan, Inspection system and apparatus.
  10. Steele,M. Brandon; Hawthorne,Jeffrey Alan; Kim,Chunho; Sowell,David C., Inspection system and apparatus.
  11. Hawthorne,Jeffrey Alan; Steele,M. Brandon, Measurement of motions of rotating shafts using non-vibrating contact potential difference sensor.
  12. Potter, Michael D., Method for electrostatic force bonding and a system thereof.
  13. Lagowski, Jacek; Wilson, Marshall; Savtchouk, Alexander, Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge.
  14. Potter,Michael D., Method for non-damaging charge injection and a system thereof.
  15. Potter,Michael D., Method for non-damaging charge injection and system thereof.
  16. Carlos M. Chacon ; Sundar S. Chetlur ; Brian E. Harding ; Minesh A. Patel ; Pradip K. Roy, Method of determining a trap density of a semiconductor/oxide interface by a contactless charge technique.
  17. Genicola,Lance; Hurley,Mark J.; Kempisty,Jeremy J.; Kirsch,Paul D.; Ramachandran,Ravikumar; Hedge,Suri, Method of monitoring introduction of interfacial species.
  18. Genicola, Lance; Hurley, Mark J.; Kempisty, Jeremy J.; Kirsch, Paul D.; Ramachandran, Ravikumar; Hedge, Suri, Method of monitoring introduction on interfacial species.
  19. Potter,Michael D., Methods for distributed electrode injection.
  20. Steeples,Kenneth, Methods for integrated implant monitoring.
  21. Potter,Michael D., Micro fluidic valves, agitators, and pumps and methods thereof.
  22. Potter,Michael D., Micro-electro-mechanical switch and a method of using and making thereof.
  23. Potter,Michael D., Motion based, electrostatic power source and methods thereof.
  24. Lagowski,Jacek; Edelman,Piotr; Marinskiy,Dmitriy; Kochey,Joseph Nicholas; Almeida,Carlos, Non-contact method for acquiring charge-voltage data on miniature test areas of semiconductor product wafers.
  25. Chacon, Carlos M.; Chetlur, Sundar; Roy, Pradip K., Non-contact method for determining quality of semiconductor dielectrics.
  26. Chacon Carlos M. ; Roy Pradip K., Non-contact method for monitoring and controlling plasma charging damage in a semiconductor device.
  27. Oborina, Elena I.; Hoff, Andrew, Noncontact determination of interface trap density for semiconductor-dielectric interface structures.
  28. Oborina, Elena I.; Hoff, Andrew, Noncontact determination of interface trap density for semiconductor-dielectric interface structures.
  29. Ma,Zhijian; Liu,Chunbo, On-chip interface trap characterization and monitoring.
  30. Maebashi, Satoshi; Hayami, Toshihiro; Umehara, Naoyuki, Plasma processing apparatus.
  31. Kamieniecki, Emil; Ruzyllo, Jerzy, Real-time in-line testing of semiconductor wafers.
  32. Kamieniecki, Emil; Ruzyllo, Jerzy, Real-time in-line testing of semiconductor wafers.
  33. Kamieniecki, Emil; Ruzyllo, Jerzy, Real-time in-line testing of semiconductor wafers.
  34. Steeples,Kenneth, Real-time in-line testing of semiconductor wafers.
  35. Tsidilkovski, Edward; Steeples, Kenneth, Real-time in-line testing of semiconductor wafers.
  36. Potter,Michael D., Rotational motion based, electrostatic power source and methods thereof.
  37. Marinskiy,Dmitriy, Self-calibration in non-contact surface photovoltage measurement of depletion capacitance and dopant concentration.
  38. Hawthorne, Jeffrey Alan; Steele, M. Brandon; Yang, Yeyuan; Schulze, Mark, Semiconductor inspection system and apparatus utilizing a non-vibrating contact potential difference sensor and controlled illumination.
  39. Steele,M. Brandon; Hawthorne,Jeffrey Alan, Semiconductor wafer inspection system.
  40. Steele,M. Brandon; Hawthorne,Jeffrey Alan, Semiconductor wafer inspection system.
  41. Finch, Robert J.; May, George A., Stress testing of silicon-on-insulator substrates using applied electrostatic discharge.
  42. He, Yandong; Zhang, Ganggang; Liu, Xiaoyan; Zhang, Xing, Testing structure and method for interface trap density of gate oxide.
  43. Steele,M. Brandon; Hawthorne,Jeffrey Alan; Kim,Chunho; Sowell,David C., Wafer inspection system.

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