[특허]Plasma sputter etching system with reduced particle contamination

Plasma sputter etching system with reduced particle contamination 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-014/54
출원번호	US-0488060 (1995-06-07)
발명자 / 주소	Lantsman Alexander D. (Middletown NY)
출원인 / 주소	Sony Corporation (Tokyo JPX 03) Materials Research Corp. (Orangeburg NY 02)
인용정보	피인용 횟수 : 26 인용 특허 : 0

초록 ▼

A plasma processing system for sputter etching a substrate with reduced particle contamination comprises a plasma processing chamber having an interior surface which defines a processing space containing a substrate. An electrical element couples electrical energy into a portion of the processing space to generate a plasma therein for etching the substrate. A heating device is coupled to the reactor and is operable for controllably heating the processing chamber interior surface to a selected temperature. The heating device is controlled by a temperature control circuit which turns the heating device to an ON state and operates the heating device to heat the processing chamber to a selected temperature when the electrical element is not coupling energy to the processing chamber and the plasma is extinguished. The selected temperature achieved by the heating device is related to the temperature of the processing chamber during plasma generation such that the interior surface is maintained at a relatively constant temperature before, during and after processing to prevent flaking of sputter material from the interior surface and generation of contamination particles within the processing space.

대표청구항 ▼

A plasma processing system for plasma sputter etching a substrate with reduced particle contamination comprising: a plasma processing chamber having an interior surface to define a processing space therein to contain a substrate to be sputter etched and including a vacuum system for creating a vacuum environment in said processing space; an electrical element coupled to the plasma processing chamber for coupling electrical energy into at least a portion of the processing space through the interior surface for generating a plasma therein to etch the substrate which thereby produces a temperature rise in the processing chamber interior surface up to a processing temperature, the element being operable for interrupting the electrical energy to the processing space so that the plasma is extinguished when the plasma processing is complete; a heating device coupled to the plasma processing chamber externally of the vacuum processing space and operable for controllably heating the processing chamber interior surface; a temperature control circuit connected to the heating device to control the operation and temperature of the heating device, the temperature control circuit turning the heating device to an ON state and operating the heating device for heating the processing chamber interior surface to approximately said processing temperature approximately at the time when the electrical element is interrupting energy to the processing chamber and the plasma is being extinguished, the temperature of the chamber interior space, after plasma generation, being maintained by the temperature control circuit approximately at the processing temperature of the processing chamber interior space during plasma generation, such that the chamber interior surface is maintained at a relatively constant temperature during plasma processing and for a predetermined time before and thereafter to prevent the flaking of deposited sputtered material from the processing chamber interior surface and the generation of contamination particles within the processing space; whereby contamination of the sputter etched substrate is reduced.

이 특허를 인용한 특허 (26)

Tang Betty ; Ding Jian, Counterbore dielectric plasma etch process particularly useful for dual damascene.
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Kawamura Hideki,JPX ; Yamamoto Hirochika,JPX ; Nishikawa Yukinobu,JPX, Heating and cooling apparatus for reaction chamber.
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Schneider Gerhard ; Shel Viktor ; Nguyen Andrew ; Wu Robert W. ; Yin Gerald Z., Inductively coupled parallel-plate plasma reactor with a conical dome.
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Praburam Gopalraja ; Jianming Fu ; Fusen Chen ; Girish Dixit ; Zheng Xu ; Sankaram Athreya ; Wei D. Wang ; Ashok K. Sinha, Integrated copper fill process.
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Gopalraja Praburam ; Fu Jianming ; Chen Fusen ; Dixit Girish ; Xu Zheng ; Athreya Sankaram ; Wang Wei D. ; Sinha Ashok K., Integrated process for copper via filling using a magnetron and target producing highly energetic ions.
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Fu Jianming ; Gopalraja Praburam, Magnetron and target producing an extended plasma region in a sputter reactor.
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Pandumsoporn Tamarak ; Feldman Mark, Magnetron reactor for providing a high density, inductively coupled plasma source for sputtering metal and dielectric films.
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Hashim, Imran; Chiang, Tony; Chin, Barry, Method and apparatus for forming improved metal interconnects.
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Hashim, Imran; Chiang, Tony; Chin, Barry, Method and apparatus for forming improved metal interconnects.
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Hashim,Imran; Chiang,Tony; Chin,Barry, Method and apparatus for forming improved metal interconnects.
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Yamamoto,Ryoichi, Method and apparatus for manufacturing liquid drop ejecting head.
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Yamamoto, Kenichi; Moritoki, Masashige; Shimane, Takashi; Saito, Kazumi; Tomimori, Hiroaki; Itou, Takamasa; Ushijima, Kousei; Tateyama, Katsuro, Method for manufacturing semiconductor device to form a via hole.
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Boris L. Druz ; Kurt E. Williams ; Alan V. Hayes, Method for repetitive ion beam processing with a carbon containing ion beam.
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Gopalraja, Praburam; Fu, Jianming; Chen, Fusen; Dixit, Girish; Xu, Zheng; Wang, Wei; Sinha, Ashok K., Operating a magnetron sputter reactor in two modes.
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Ngan Kenny King-tai, Pasting layer formation method for high density plasma deposition chambers.
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Betty Tang ; Jian Ding, Plasma etch process in a single inter-level dielectric etch.
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Takahashi,Kazue; Masuda,Toshio; Kaji,Tetsunori; Yokogawa,Ken'etsu, Plasma processing apparatus and a plasma processing method.
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Kanai,Saburo; Takahashi,Kazue; Okamura,Kouichi; Hamasaki,Ryoji; Ito,Satoshi, Plasma processing method.
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Murugesh Laxman ; Narwankar Pravin ; Sahin Turgut ; Rossman Kent, Reduction in mobile ion and metal contamination by varying season time and bias RF power during chamber cleaning.
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Jianming Fu ; Praburam Gopalraja, Sputtering method utilizing an extended plasma region.
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Praburam Gopalraja ; Jianming Fu, Sputtering target having an annular vault.
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Miura, Tatsuya; Ozawa, Wataru; Fukasawa, Kimihiro; Kazama, Kazunori, Temperature control method, control apparatus, and plasma processing apparatus.
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Kajihara, Yuji, Vacuum processing apparatus and optical component manufacturing method.
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Hurwitt ; deceased Steven D., Vacuum processing apparatus with low particle generating vacuum seal.
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Praburam Gopalraja ; Jianming Fu ; Fusen Chen ; Girish Dixit ; Zheng Xu ; Wei Wang ; Ashok K. Sinha, Vault shaped target and magnetron operable in two sputtering modes.
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Praburam Gopalraja ; Jianming Fu ; Wei Wang, Vault-shaped target and magnetron having both distributed and localized magnets.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
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연합인증

Plasma sputter etching system with reduced particle contamination 원문보기

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Plasma sputter etching system with reduced particle contamination 원문보기

초록 ▼

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연구과제 타임라인

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