초록 ▼

The invention teaches a multi-step method for shutting down the dry-etch process. The ICP rf power is reduced between each of these consecutive power-down steps of the dry-etch process, the complete power-down sequence consists of six steps. These six steps are executed in sequence and without inter

The invention teaches a multi-step method for shutting down the dry-etch process. The ICP rf power is reduced between each of these consecutive power-down steps of the dry-etch process, the complete power-down sequence consists of six steps. These six steps are executed in sequence and without interruption and form the totality of the dry-etch chamber power-down procedure.

대표청구항 ▼

What is claimed is: 1. Providing a method of reducing particle count at the end of Power-down for an Inductive Coupled Plasma (ICP) dry-etch cleaning chamber, comprising the steps of: providing a ICP dry-etch cleaning chamber; positioning a workpiece within said cleaning chamber; and following a dr

What is claimed is: 1. Providing a method of reducing particle count at the end of Power-down for an Inductive Coupled Plasma (ICP) dry-etch cleaning chamber, comprising the steps of: providing a ICP dry-etch cleaning chamber; positioning a workpiece within said cleaning chamber; and following a dry-etch chamber power-down procedure, whereby said power-down is a six step power-down procedure, whereby said six steps of said power-down procedure follow in a given sequence and without interruption or time-lag in between any of said six steps, and whereby step 1 is specified as 30 mt/600 w ICP/15 w RIE/30 sccm O2/2.5 min., whereby further step 2 is specified as 30 mt/560 w ICP/15 w RIE/30 sccm O2/30 sec., whereby further step 3 is specified as 30 mt/520 w ICP/15 w RIE/30 sccm O2/30 sec., whereby further step 4 is specified as 30 mt/480 w ICP/15 w RIE/30 sccm O2/30 sec., whereby further step 5 is specified as 30 mt/440 w ICP/15 w RIE/30 sccm O2/30, whereby further step 6 is specified as 30 mt/400 w ICP/15 w RIE/30 sccm O2/30 sec. 2. The method of claim 1 wherein said six step power down procedure is modified to a sequence of N steps, wherein N is a whole integer number other than zero, where processing conditions for each consecutive step are specified as 30 mt/AA w ICP/15 w RIE/30 sccm O2/30 sec, wherein said AA w ICP represents a value of applied power for the consecutive steps within said sequence, said applied power to decrease concurrent with increases in a value of N, whereby said applied power varies from an initial high value to a final low value. 3. The method of claim 1 wherein said following a dry-etch chamber power-down procedure is a power-down procedure whereby rf power supplied to an Inductive Coupled Plasma (ICP) coil is reduced in a sequential and controlled manner during time of a cleaning process of said dry-etch chamber, whereby at all times during said time there is a one-to-one relationship between rf power supplied to the ICP coil and time of a cleaning cycle. 4. The method of claim 1, said dry-etch chamber having a holding member with a surface which holds wafers or masks to be etched and an enclosing member which encloses the holding member to form a chamber for a plasma, whereby plasma agitation occurs by an rf coil arrangement surrounding said enclosing member, whereby said rf coil arrangement produces a large voltage change near the enclosing member thereby enabling cleaning of the enclosing member by the plasma, whereby furthermore plasma gasses can continuously be removed from said enclosing member by means of a suction pump arrangement attached to said enclosing member. 5. The method of claim 1 wherein said workpiece is a photolithography mask. 6. The method of claim 1 wherein said workpiece is the surface of a semiconductor substrate. 7. The method of claim 1 wherein said workpiece is any surface within the construction of a semiconductor device to which a dry-etch operation must be performed.