초록 ▼

A cleaning of a plasma chamber is done by a NF3 plasma treatment (typically under 1 to 1.5 Torr). The etching rate of an oxide layer can be improved by inserting, between the NF3 plasma treatments, a low pressure (lower than 10-1 Torr) plasma treatment preferably in a plasma of oxygen, water vapor,

A cleaning of a plasma chamber is done by a NF3 plasma treatment (typically under 1 to 1.5 Torr). The etching rate of an oxide layer can be improved by inserting, between the NF3 plasma treatments, a low pressure (lower than 10-1 Torr) plasma treatment preferably in a plasma of oxygen, water vapor, silane, fluorine, a hydrate compound, nitrogen trifluoride, or a mixture of nitrogen trifluoride with at least one of hydrogen fluoride, fluorine, water vapor and hydride compounds.

대표청구항 ▼

A process for in-situ cleaning of a plasma treatment chamber, said process comprising the steps of: conducting a first plasma treatment in a plasma treatment chamber with nitrogen trifluoride plasma at a first pressure, so as to remove an oxide layer previously deposited inside the plasma treatment

A process for in-situ cleaning of a plasma treatment chamber, said process comprising the steps of: conducting a first plasma treatment in a plasma treatment chamber with nitrogen trifluoride plasma at a first pressure, so as to remove an oxide layer previously deposited inside the plasma treatment chamber; conducting a second plasma treatment in said plasma treatment chamber at a second pressure lower than said first pressure, said second plasma treating being conducted in a plasma of a gas selected from a group consisting of oxygen, water vapor, silane, fluorine, nitrogen trifluoride, or a mixture of nitrogen trifluoride with at least one of hydrogen fluoride, fluorine, and water vapor; and a third plasma treatment in said plasma treatment chamber with nitrogen trifluoride plasma at a third pressure higher than said second pressure, so as to further remove said oxide layer.