초록 ▼

Methods of planarizing one or more layers having an irregular top surface topology in a semiconductor device based on an underlying MOS structure are disclosed. Methods of creating doped wells or regions for the underlying MOS structure are also disclosed, using thick oxide growths on the surface of

Methods of planarizing one or more layers having an irregular top surface topology in a semiconductor device based on an underlying MOS structure are disclosed. Methods of creating doped wells or regions for the underlying MOS structure are also disclosed, using thick oxide growths on the surface of the substrate to mask implantation of ions into the wells. A technique for creating a pair of adjacent complementary oppositely-doped wells, such as for a CMOS structure, using a thick oxide growths as a mask is also disclosed. One of the methods of planarizing the one or more layers involves depositing, densifying and re-flowing a layer of glass on top of the topological layer. Another method of planarizing the one or more layers involves depositing, densifying and chemical-mechanically polishing the deposited and densified glass, thereby avoiding an additional temperature cycle (i.e., for re-flowing the glass) which would adversely affect underlying diffusions.

대표청구항 ▼

A method of fabricating a CMOS microelectronic circuit on a surface of a semiconductor substrate having first and second well regions, comprising: forming a silicon nitride layer over the surface; patterning the silicon nitride layer to have an opening over the first well region and a nitride segmen

A method of fabricating a CMOS microelectronic circuit on a surface of a semiconductor substrate having first and second well regions, comprising: forming a silicon nitride layer over the surface; patterning the silicon nitride layer to have an opening over the first well region and a nitride segment over the second well region; implanting a first dopant of a first conductivity type into the substrate through the opening into the first well region, the nitride segment substantially shielding implantation of the first dopant into the second well region; growing a first silicon dioxide layer over the surface in the opening over the first well region, the nitride segment substantially inhibiting growth of silicon dioxide in the second well region; removing the silicon nitride layer; implanting a second dopant of a second conductivity type into the substrate, the first silicon dioxide layer substantially shielding implantation of the second dopant into the first well region; removing the first silicon dioxide layer; forming gate oxide layers over channel regions in the first and second well regions respectively; forming gates over the gate oxide layers respectively; forming source and drain regions in each of the first and second well regions on opposite sides of the channel regions respectively; forming a second silicon dioxide layer over the surface and the gates which is relatively thick between the first and second well regions and is relatively thin in remaining areas over the surface, a surface of the second layer of silicon dioxide having irregular topology; forming a third silicon dioxide layer over the second silicon dioxide layer, a top surface of the third silicon dioxide layer having irregular topology; applying a sacrificial layer of a material over said top surface of the third silicon dioxide layer such that the sacrificial layer has a substantially planar top surface, the sacrificial layer having substantially a same etch rate in an etchant as the third silicon dioxide layer; etching the sacrificial layer and portions of said top surface of the third silicon dioxide layer that become exposed through the sacrificial layer using said etchant; sensing for absence of said material of the sacrificial layer in said etchant that has been used in said etching; terminating said etching when said material of the sacrificial layer is substantially absent from said used etchant; forming a fourth silicon dioxide layer over the third silicon dioxide layer; forming first vias through the fourth, third and second silicon dioxide layers; forming metal plugs in the first vias to contact the source and drain regions respectively; forming a fifth silicon dioxide layer over the fourth silicon dioxide layer and over the metal plugs, a surface of the fifth silicon dioxide layer having troughs and irregularities; forming a filler glass layer over the fifth silicon dioxide layer to smooth the troughs and irregularities; forming a sixth silicon dioxide layer over the filler glass layer silicon dioxide layer and portions of the fifth silicon dioxide layer that are exposed through the filler glass layer; forming second vias through the sixth and fifth silicon dioxide layers; applying a barrier metal layer that fills the second vias over the sixth silicon dioxide layer; applying a metal filler over the barrier metal layer; applying a metal cap over the metal filler; and applying a passivation layer over the metal cap and the sixth silicon dioxide layer.