이 특허를 인용한 특허 (174)

1. Freer, Erik M.; de Larios, John M.; Mikhaylichenko, Katrina; Ravkin, Michael; Korolik, Mikhail; Redeker, Fred C.; Thomas, Clint; Parks, John, Apparatus and system for cleaning a substrate.

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2. Hahn, Christopher; Lee, Hanjoo, Apparatus for ejecting fluid onto a substrate and system and method incorporating the same.

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3. Barry K. Florez, Apparatus for rinsing and drying semiconductor wafers in a chamber with a movable side wall.

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4. Barry K. Florez, Apparatus for rinsing and drying semiconductor wafers in a chamber with a movable side wall.

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5. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of a workpiece.

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6. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of multiple workpieces.

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7. de Larios,John M.; Owczarz,Aleksander; Schoepp,Alan; Redeker,Fritz, Apparatuses and methods for cleaning a substrate.

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8. Harris, Randy; Peterson, David; Davis, Jeffry, Automated semiconductor immersion processing system.

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9. Randy Harris ; David Peterson ; Jeffry Davis, Automated semiconductor immersion processing system.

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10. Davis, Jeffry A.; Meyer, Kevin P.; Dolechek, Kert L., Automated semiconductor processing system.

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11. Hackenberg, Diana L., Brushless multipass silicon wafer cleaning process for post chemical mechanical polishing using immersion.

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12. Chang Jieh-Ting,TWX ; Lin Shiow-Shiang,TWX, Caro's cleaning of SOG control wafer residue.

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13. Pasqualoni, Anthony Mark; Mahulikar, Deepak; LaFollette, Larry A.; Jenkins, Richard J., Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers.

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14. Mertens, Paul; Loewenstein, Lee; Vereecke, Guy, Chemical solution and method for reducing the metal contamination on the surface of a semiconductor substrate.

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15. Doi,Minoru, Cleaning apparatus for semiconductor wafer.

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16. Li, Chia-Wen; Chou, Bo-Wei; Ku, Shao-Yen; Ming-Jung, Chen, Cleaning composition and method for semiconductor device fabrication.

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17. Ohmi Tadahiro,JPX, Cleaning method.

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18. Yeh, Ming-Hsi; Wu, Sung-Hsun; Chen, Chao-Cheng; Jang, Syun-Ming; Chou, Bo-Wei, Cleaning method for semiconductor device fabrication.

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19. Zhou Dashun Steve ; Beilin Solomon I. ; Roman James J., Cleaning method using ammonium persulphate to remove slurry particles from CMP substrates.

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20. Ohmi Tadahiro,JPX ; Nitta Takahisa,JPX, Cleaning method utilizing degassed cleaning liquid with applied ultrasonics.

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21. Michael Jolley, Cleaning solutions and methods for semiconductor wafers.

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22. Small Robert J. ; Cheng Jun ; Maw Taishih, Compositions for cleaning organic and plasma etched residues for semiconductors devices.

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23. Luscher, Paul E.; Carducci, James D.; Salimian, Siamak; Welch, Michael D., Configurable single substrate wet-dry integrated cluster cleaner.

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24. Luscher, Paul E; Carducci, James D; Salimian, Siamak, Configurable single substrate wet-dry integrated cluster cleaner.

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25. Bennett Ryan Paul ; Zaro ; Jr. Harry Frank ; Iizuka Naoto, Contamination monitoring system.

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26. Shive Larry Wayne ; Malik Igor Jan, Control of SiO.sub.2 etch rate using dilute chemical etchants in the presence of a megasonic field.

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27. Jones,William Dale, Control of fluid flow in the processing of an object with a fluid.

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28. Cohen Susan ; Cooper Emmanuel I. ; Penner Klaus,DEX ; Rath David L. ; Srivastava Kamalesh K., Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics.

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29. Arena Foster,Chantal J.; Awtrey,Allan Wendell; Ryza,Nicholas Alan; Schilling,Paul, Developing photoresist with supercritical fluid and developer.

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30. Arena-Foster, Chantal J.; Awtrey, Allan Wendell; Ryza, Nicholas Alan; Schilling, Paul, Developing photoresist with supercritical fluid and developer.

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31. Arena-Foster, Chantal J.; Awtrey, Allan Wendell; Ryza, Nicholas Alan; Schilling, Paul, Drying resist with a solvent bath and supercritical CO2.

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32. Bleck, Martin; Atkins, Wyland L., Dump door.

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33. Anantha R. Sethuraman ; William W. C. Koutny, Jr., Employing an acidic liquid and an abrasive surface to polish a semiconductor topography.

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34. Sethuraman Anantha R. ; Koutny ; Jr. William W. C., Employing an acidic liquid and an abrasive surface to polish a semiconductor topography.

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35. Koutny ; Jr. William W. C., Employing deionized water and an abrasive surface to polish a semiconductor topography.

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36. Fucsko, Janos; Waldo, Grady S.; Wiggins, Joseph; Raghu, Prashant, Etch compositions and methods of processing a substrate.

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37. Fucsko,Janos; Waldo,Grady S.; Wiggins,Joseph; Raghu,Prashant, Etch compositions and methods of processing a substrate.

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38. Sheydayi,Alexei; Sutton,Thomas, Gate valve for plus-atmospheric pressure semiconductor process vessels.

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39. Sutton, Thomas R.; Biberger, Maximilan A., High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism.

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40. Jones, William D., High pressure fourier transform infrared cell.

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41. Biberger, Maximilian A.; Layman, Frederick Paul; Sutton, Thomas Robert, High pressure processing chamber for semiconductor substrate.

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42. Biberger,Maximilian A.; Layman,Frederick Paul; Sutton,Thomas Robert, High pressure processing chamber for semiconductor substrate.

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43. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.

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44. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.

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45. Bansal, Iqbal K.; Goodrich, Joel L., In-situ method for producing a hydrogen terminated hydrophobic surface on a silicon wafer.

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46. Carlson Brent D. ; Olson Erik D. ; Oikari James R., Low haze wafer treatment process.

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47. Lauerhaas, Jeffrey M.; Nicolosi, Jr., Thomas J.; Mertens, Paul; Fyen, William, Megasonic cleaner and dryer.

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48. Lauerhaas,Jeffrey M.; Nicolosi, Jr.,Thomas J.; Mertens,Paul; Fyen,William, Megasonic cleaner and dryer.

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49. Hosack, Chad M.; Lauerhaas, Jeffrey M.; Bran, Mario E.; Standt, Raoul; Patel, Paul; Wu, Yi; Doumen, Geert; Mertens, Paul, Megasonic cleaner and dryer system.

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50. Nicolosi, Tom; Wu, Yi, Megasonic cleaner probe system with gasified fluid.

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51. Skrovan John ; Hudson Guy F., Megasonic cleaning methods and apparatus.

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52. Franklin,Cole S.; Wu,Yi; Fraser,Brian, Megasonic cleaning using supersaturated cleaning solution.

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53. Franklin, Cole S.; Wu, Yi; Fraser, Brian, Megasonic cleaning using supersaturated solution.

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54. Sheydayi,Alexei, Method and apparatus for clamping a substrate in a high pressure processing system.

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55. Freer, Erik M.; deLarios, John M.; Mikhaylichenko, Katrina; Ravkin, Michael; Korolik, Mikhail; Redeker, Fred C., Method and apparatus for cleaning a semiconductor substrate.

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56. Freer, Erik M.; deLarios, John M.; Mikhaylichenko, Katrina; Ravkin, Michael; Korolik, Mikhail; Redeker, Fred C., Method and apparatus for cleaning a semiconductor substrate.

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57. de Larios, John M.; Ravkin, Mike; Farber, Jeffrey; Korolik, Mikhail; Redeker, Fred C., Method and apparatus for cleaning a substrate using non-Newtonian fluids.

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58. de Larios, John M.; Ravkin, Mike; Farber, Jeffrey; Korolik, Mikhail; Redeker, Fred C., Method and apparatus for cleaning a substrate using non-newtonian fluids.

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59. Goshi,Gentaro, Method and apparatus for cooling motor bearings of a high pressure pump.

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60. Newell E. Chiesl, III ; Gregory L. Burns ; Theodore C. Moore, Method and apparatus for detecting presence of residual polishing slurry subsequent to polishing of a semiconductor wafer.

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61. Kam Beng Chong SG, Method and apparatus for measuring and dispensing a wafer etchant.

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62. Grabbe, Alexis; Bjelopavlic, Mick; Hull, Ashley S.; Haler, Michele L.; Zhang, Guoqiang (David); Erk, Henry F.; Xin, Yun-Biao, Method and apparatus for processing a semiconductor wafer using novel final polishing method.

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63. Betancourt, Ernest; Brigante, Jeffrey A.; Gale, Glenn W.; Salamon, Jr., William, Method and apparatus for recovery of semiconductor wafers from a chemical tank.

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64. Zhu, Ji; Mendiratta, Arjun; Mui, David, Method and apparatus for removing contaminants from substrate.

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65. Freer, Erik M.; de Larios, John M.; Mikhaylichenko, Katrina; Ravkin, Michael; Korolik, Mikhail; Redeker, Fred C.; Thomas, Clint; Parks, John, Method and apparatus for removing contamination from substrate.

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66. Starov Vladimir ; Basha Syed S. ; Shrinivasan Krishnan ; Reinhardt Karen A. ; Kabansky Aleksandr, Method and apparatus for removing post-etch residues and other adherent matrices.

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67. James B. Sundin ; Richard S. Tirendi ; Paul W. Dryer, Method and apparatus for semiconductor wafer cleaning with reuse of chemicals.

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68. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method and apparatus for supercritical processing of multiple workpieces.

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69. de Larios,John M.; Ravkin,Mike; Parks,John; Korolik,Mikhail; Redeker,Fred C., Method and apparatus for transporting a substrate using non-Newtonian fluid.

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70. Freer, Erik M.; de Larios, John M.; Mikhaylichenko, Katrina; Ravkin, Michael; Korolik, Mikhail; Redeker, Fred C., Method and material for cleaning a substrate.

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71. Parent,Wayne M.; Goshi,Gentaro, Method and system for cooling a pump.

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72. Parent,Wayne M., Method and system for determining flow conditions in a high pressure processing system.

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73. Parent, Wayne M.; Geshell, Dan R., Method and system for passivating a processing chamber.

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74. Hansen,Brandon; Lowe,Marie, Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid.

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75. Korolik, Mikhail; Freer, Erik M.; de Larios, John M.; Mikhaylichenko, Katrina; Ravkin, Mike; Redeker, Fritz, Method and system for using a two-phases substrate cleaning compound.

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76. Chang, Juin-Jie; Twu, Jih-Churng; Kao, Rong-Hui, Method for cleaning a silicon-based substrate without NH4OH vapor damage.

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77. Sethuraman Anantha R. ; Koutny ; Jr. William W. C., Method for cleaning a surface of a dielectric material.

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78. Berbel Jose A., Method for drying objects with fluids.

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79. Lai,Su Chen, Method for forming a bottle-shaped trench.

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80. Ramkumar, Krishnaswamy; Kallingal, Chidambaram G.; Madhavan, Sriram, Method for forming an integrated circuit device.

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81. Bran, Mario E., Method for megasonic processing of an article.

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82. Schulz Peter,DEX, Method for reducing metal contamination of silicon wafers during semiconductor manufacturing.

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83. Verhaverbeke, Steven, Method for reducing particle contamination during the wet processing of semiconductor substrates.

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84. Douglas Monte A. ; Templeton Allen C., Method for removing inorganic contamination by chemical derivitization and extraction.

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85. Korolik, Mikhail; Ravkin, Michael; deLarios, John; Redeker, Fritz C.; Boyd, John M., Method for removing material from semiconductor wafer and apparatus for performing the same.

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86. Kawamura,Kohei; Asano,Akira; Miyatani,Koutarou; Hillman,Joseph T.; Palmer,Bentley, Method for supercritical carbon dioxide processing of fluoro-carbon films.

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87. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.

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88. Koppl Franz,DEX ; Steudten Friedrich,DEX ; Schantz Matthaus,DEX, Method for the treatment of semiconductor material.

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89. Suzuki, Tatsuya, Method for washing wafer and apparatus used therefor.

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90. Nagamura,Yoshikazu; Yoshioka,Nobuyuki; Yamanaka,Koji; Usui,Hozumi, Method of and apparatus for washing photomask and washing solution for photomask.

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91. Oleg V. Kononchuk ; Zbigniew J. Radzimski, Method of demounting silicon wafers after polishing.

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92. Biberger, Maximilian A.; Schilling, Paul E., Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module.

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93. Biberger,Maximilian A.; Schilling,Paul E., Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module.

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94. Dunn, L. Brian, Method of diffusing pressurized liquid.

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95. Hillman,Joseph, Method of inhibiting copper corrosion during supercritical COcleaning.

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96. Gilboa, Yitzhak; Koutny, Jr., William W. C.; Hedayati, Steven; Ramkumar, Krishnaswamy, Method of making a planarized semiconductor structure.

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97. Bran, Mario E., Method of manufacturing integrated circuit devices.

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98. Bennett Ryan Paul ; Zaro ; Jr. Harry Frank ; Iizuka Naoto, Method of monitoring fluid contamination.

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99. Toma,Dorel Ioan; Schilling,Paul, Method of passivating of low dielectric materials in wafer processing.

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100. Lo Yung Tsun,TWX ; Yi Guan Jiun,TWX ; Lin Chi Hen,TWX ; Jih Jyh Ming,TWX, Method of preventing defects and particles produced after tungsten etch back.

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101. Yates, Donald L., Method of reducing surface contamination in semiconductor wet-processing vessels.

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102. Douglas Monte A. ; Templeton Allen C., Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media.

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103. Barry K. Florez, Method of rinsing and drying semiconductor wafers in a chamber with a movable side wall.

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104. Florez Barry K., Method of rinsing and drying semiconductor wafers in a chamber with a movable side wall.

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105. Florez Barry K., Method of rinsing and drying semiconductor wafers in a chamber with a movable side wall.

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106. Florez Barry K., Method of rinsing and drying semiconductor wafers in a chamber with a moveable side wall.

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107. Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.

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108. Schilling,Paul, Method of treating a composite spin-on glass/anti-reflective material prior to cleaning.

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109. Schilling,Paul, Method of treatment of porous dielectric films to reduce damage during cleaning.

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110. Whonchee Lee ; Richard C. Hawthorne ; Li Li ; Pai Hung Pan, Methods and etchants for etching oxides of silicon with low selectivity.

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111. Verhaverbeke Steven ; DiBello Gerald N. ; McConnell Christopher F., Methods and systems for determining chemical concentrations and controlling the processing of semiconductor substrates.

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112. Ko,Hyung Ho; Hong,Chang Ki; Choi,Sang Jun; Han,Dong Gyun, Methods for cleaning a semiconductor substrate having a recess channel region.

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113. Puri, Suraj; Medeiros, Jr., Joseph; Becker, David Scott; Narayanswami, Natraj, Methods for cleaning microelectronic substrates using ultradilute cleaning liquids.

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114. Puri, Suraj; Medeiros, Jr., Joseph; Mohindra, Raj, Methods for cleaning microelectronic substrates using ultradilute cleaning liquids.

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115. Mikhaylichenko, Katrina; Ravkin, Mike; Redeker, Fritz; de Larios, John M.; Freer, Erik M.; Korolik, Mikhail, Methods for contained chemical surface treatment.

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116. Sheydayi,Alexei, Non-contact shuttle valve for flow diversion in high pressure systems.

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117. Sethuraman Anantha R. ; Seams Christopher A., Planarized semiconductor interconnect topography and method for polishing a metal layer to form interconnect.

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118. Sethuraman, Anantha R.; Seams, Christopher A., Planarized semiconductor interconnect topography and method for polishing a metal layer to form interconnect.

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119. Koutny, Jr., William W. C.; Sethuraman, Anantha R.; Seams, Christopher A., Planarized semiconductor interconnect topography and method for polishing a metal layer to form wide interconnect structures.

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120. Koutny ; Jr. William W. C. ; Kallingal Chidambaram G. ; Ramkumar Krishnaswamy, Planarizing a trench dielectric having an upper surface within a trench spaced below an adjacent polish stop surface.

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121. Adams Darrell E. ; Butler Michael D. ; Blake Kim A., Positive flow, positive displacement rinse tank.

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122. Sheydayi,Alexei, Pressure energized pressure vessel opening and closing device and method of providing therefor.

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123. Dunn, L. Brian, Pressurized liquid diffuser.

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124. Dunn, L. Brian, Pressurized liquid diffuser.

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125. Dunn, L. Brian, Pressurized liquid diffuser.

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126. Wuester,Christopher D., Process flow thermocouple.

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127. Peng,Chia Tien; Sun,Ming Wei, Process for cleaning silicon surface and fabrication of thin film transistor by the process.

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128. Schwab, Gunter; Langsdorf, Karlheinz; Stadler, Maximilian; Pichelmeier, Edeltraut, Process for the wet-chemical surface treatment of a semiconductor wafer.

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129. Arndt Russell H. ; Gale Glenn Walton ; Kern ; Jr. Frederick William ; Madden Karen P. ; Okorn-Schmidt Harald F. ; Ouimet ; Jr. George Francis ; Salgado Dario ; Wuthrich Ryan Wayne, Process for treating a semiconductor substrate.

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130. Russell H. Arndt ; Glenn Walton Gale ; Frederick William Kern, Jr. ; Karen P. Madden ; Harald F. Okorn-Schmidt ; George Francis Ouimet, Jr. ; Dario Salgado ; Ryan Wayne Wuthrich, Process for treating a semiconductor substrate.

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131. Mullee,William H.; de Leeuwe,Marc; Roberson, Jr.,Glenn A.; Palmer,Bentley J., Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process.

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132. Mullee, William H.; de Leeuwe, Marc; Roberson, Jr., Glenn A., Removal of CMP residue from semiconductor substrate using supercritical carbon dioxide process.

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133. Mullee William H. ; de Leeuwe Marc ; Roberson ; Jr. Glenn A., Removal of CMP residue from semiconductors using supercritical carbon dioxide process.

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134. Bertram, Ronald Thomas; Scott, Douglas Michael, Removal of contaminants from a fluid.

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135. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.

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136. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.

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137. William H. Mullee ; Maximilian A. Biberger ; Paul E. Schilling, Removal of photoresist and residue from substrate using supercritical carbon dioxide process.

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138. Koch Robert, Removal of polishing residue from substrate using supercritical fluid process.

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139. Mullee William H., Removal of resist or residue from semiconductors using supercritical carbon dioxide.

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140. Adams John A. ; Krulik Gerald A., Rinse water recycling method for semiconductor wafer processing equipment.

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141. Florez Barry K., Rinse/dry apparatus including a chamber with a moveable side wall.

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142. Victoria Oravec FR, Rinsing tank with ultra clean liquid.

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143. Morinaga,Hitoshi; Mochizuki,Hideaki; Itou,Atsushi, Semiconductor cleaning composition comprising an ethoxylated surfactant.

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144. Koutny, Jr., William W. C., Semiconductor topography with a fill material arranged within a plurality of valleys associated with the surface roughness of the metal layer.

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145. Olesen Michael B. ; Bran Mario E., Semiconductor wafer cleaning method.

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146. Michael B. Olesen ; Mario E. Bran, Semiconductor wafer cleaning system.

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147. Olesen Michael B. ; Bran Mario E., Semiconductor wafer cleaning system.

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148. Olesen Michael B. ; Bran Mario E., Semiconductor wafer cleaning system.

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149. Olesen Michael B. ; Bran Mario E., Semiconductor wafer cleaning system.

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150. Fujisawa Yoichi,JPX ; Ogawa Kaoru,JPX ; Hikazutani Kenichi,JPX, Silicon substrate evaluation method and semiconductor device manufacturing method.

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151. Pagliaro, Jr., Robert H., Silicon surface preparation.

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152. Chang Chun Chieh,TWX ; Chen Kuo-Fong,TWX ; Kao Jung-Hui,TWX, Simplified method for cleaning silicon wafers after application of laser marks.

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153. Chun Chieh Chang TW; Kuo-Fong Chen TW; Jung-Hui Kao TW, Simplified method for cleaning silicon wafers after application of laser marks.

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154. Dana Scranton ; Gary L. Curtis, Single semiconductor wafer processor.

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155. Yalamanchili M. Rao ; Myli Kari B.,CAX ; Shive Larry W., Single-operation method of cleaning semiconductors after final polishing.

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156. Nicolosi,Tom; Wu,Yi, Sonic-energy cleaner system with gasified fluid.

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157. Pagliaro, Jr., Robert H.; Doty, Mitchell L.; King, Diane M., Stable, oxide-free silicon surface preparation.

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158. Hosack, Chad M.; Patel, Paul; Standt, Raoul, Stackable process chambers.

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159. Scranton, Dana; Sharp, Ian, Substrate drying method for use with a surface tension effect dryer with porous vessel walls.

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160. Freer, Erik M.; de Larios, John M.; Ravkin, Michael; Korolik, Mikhail; Mikhaylichenko, Katrina; Redeker, Fritz C., Substrate preparation using stabilized fluid solutions and methods for making stable fluid solutions.

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161. Scranton, Dana; Sharp, Ian, Surface tension effect dryer with porous vessel walls.

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162. Kittle Paul A., Surface treatment of semiconductor substrates.

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163. Kittle, Paul A., Surface treatment of semiconductor substrates.

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164. Paul A. Kittle, Surface treatment of semiconductor substrates.

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165. Gale,Glenn; Hillman,Joseph T.; Jacobson,Gunilla; Palmer,Bentley, System and method for processing a substrate using supercritical carbon dioxide processing.

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166. Sethuraman Anantha R. ; Koutny ; Jr. William W. C., System for cleaning a surface of a dielectric material.

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167. Bran, Mario E., System for megasonic processing of an article.

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168. Kudelka Stephan ; Rath David, Temperature controlled degassification of deionized water for megasonic cleaning of semiconductor wafers.

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169. Kudelka Stephan ; Rath David, Temperature controlled gassification of deionized water for megasonic cleaning of semiconductor wafers.

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170. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.

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171. Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.

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172. Sheydayi,Alexei, Vacuum chuck utilizing sintered material and method of providing thereof.

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173. Garcia Alejandro ; Krick Brent ; Nichtawitz Anthony,PEX ; Nordeen Daniel ; Oen Josh ; Smith Kenneth ; Suro Vincent ; Wolf Daniel, Wafer cleaning system.

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174. Akatsu Hiroyuki, Wafer cleaning with dissolved gas concentration control.

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