초록 ▼

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band a

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

대표청구항 ▼

A tunnel junction semiconductor device consisting of: a first layer of p-doped first semiconductor material, said material being either a group III-V or group II-VI alloy; a second layer of n-doped second semiconductor alloy; and a thin enhancement layer of p-doped third semiconductor alloy adjacent

A tunnel junction semiconductor device consisting of: a first layer of p-doped first semiconductor material, said material being either a group III-V or group II-VI alloy; a second layer of n-doped second semiconductor alloy; and a thin enhancement layer of p-doped third semiconductor alloy adjacent and between said first and second layers, said enhancement layer having a higher energy valence band than said first layer for reducing tunneling distance across the device; said second layer and said enhancement layer materials being of the same class as the first layer.