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Eutectic Cu-alloy wiring structure in a semiconductor device 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/43
출원번호 US-0558524 (1995-11-16)
우선권정보 JP-0281043 (1994-11-16)
발명자 / 주소
  • Miyakawa Kuniko (Tokyo JPX)
출원인 / 주소
  • NEC Corporation (Tokyo JPX 03)
인용정보 피인용 횟수 : 39  인용 특허 : 1

초록

In a semiconductor device having a wiring groove in alignment with a contact hole, a wiring structure includes a diffusion preventing film formed on the bottom and side walls of the wiring groove, the diffusion preventing film being composed of a barrier metal for preventing diffusion of Cu and an e

대표청구항

A wiring structure in a semiconductor device having a connection hole in alignment with another connection hole, the wiring structure including a diffusion preventing film formed on the bottom and side walls of each said hole, the diffusion preventing film being composed of a barrier metal for preve

이 특허에 인용된 특허 (1)

  1. Hooper Robert C. (Houston TX) Roane Bobby A. (Manvel TX) Verret Douglas P. (Sugar Land TX), Metal contacts and interconnections for VLSI devices.

이 특허를 인용한 특허 (39)

  1. Pramanick Shekhar ; Brown Dirk ; Iacoponi John A., Dual barrier and conductor deposition in a dual damascene process for semiconductors.
  2. McQueen, Mark, ESD/EOS protection structure for integrated circuit devices and methods of fabricating the same.
  3. Allen McTeer, Formation of electrical contacts to conductive elements in the fabrication of semiconductor integrated circuits.
  4. Nariman Homi E. ; Fulford ; Jr. H. Jim, High-reliability damascene interconnect formation for semiconductor fabrication.
  5. Satitpunwaycha Peter ; Yao Gongda ; Ngan Kenny King-Tai ; Xu Zheng, Integrated PVD system for aluminum hole filling using ionized metal adhesion layer.
  6. Ahn, Kie Y., Integrated circuit wiring with low RC time delay.
  7. Huang, Tsung-Min; Lee, Chung-Ju; Tsai, Tsung-Jung, Interconnect structure and methods of making same.
  8. Huang, Tsung-Min; Lee, Chung-Ju; Tsai, Tsung-Jung, Interconnect structure and methods of making same.
  9. Huang, Tsung-Min; Lee, Chung-Ju; Tsai, Tsung-Jung, Interconnect structure and methods of making same.
  10. Wong,Kwong Hon; Hsu,Louis C.; Dalton,Timothy J.; Radens,Carl J.; Yang,Chih Chao; Clevenger,Lawrence A.; Standaert,Theodorus E., Interconnect structures with encasing cap and methods of making thereof.
  11. Wong,Kwong Hon; Hsu,Louis C.; Dalton,Timothy J.; Radens,Carol; Yang,Chih Chao; Clevenger,Lawrence A.; Standaert,Theodorus E., Interconnect structures with encasing cap and methods of making thereof.
  12. Edward Crandal Cooney, III ; Cyprian Emeka Uzoh, Low resistivity tantalum.
  13. Hsia Shouli Steve ; Wang Zhihai ; Chen Fred,TWX, Metal interconnect stack for integrated circuit structure.
  14. Yamazaki, Shunpei; Shoji, Hironobu; Kawamata, Ikuko, Method for manufacturing display device with electrode having frame shape.
  15. Ahn,Kie Y., Method of fabricating a semiconductor interconnect structure.
  16. Lu, Chih Wei; Lee, Chung-Ju, Method of fabricating a semiconductor interconnect structure.
  17. Lu, Chih Wei; Lee, Chung-Ju, Method of fabricating an semiconductor interconnect structure.
  18. Mochizuki Hiroshi,JPX ; Okuwada Kumi,JPX ; Kanaya Hiroyuki,JPX ; Hidaka Osamu,JPX ; Shuto Susumu,JPX ; Kunishima Iwao,JPX, Method of forming a ferroelectric device.
  19. Barr, Alexander L.; Venkatesan, Suresh; Clegg, David B.; Cole, Rebecca G.; Adetutu, Olubunmi; Greer, Stuart E.; Anthony, Brian G.; Venkatraman, Ramnath; Braeckelmann, Gregor; Reber, Douglas M.; Crown, Method of forming semiconductor device including interconnect barrier layers.
  20. Ahn, Kie Y.; Forbes, Leonard; Farrar, Paul A., Methods and structures for metal interconnections in integrated circuits.
  21. Ahn,Kie Y.; Forbes,Leonard; Farrar,Paul A., Methods and structures for metal interconnections in integrated circuits.
  22. Malta Dean M. ; Dreifus David L., Methods for fabricating microelectronic structures including semiconductor islands.
  23. Lee Byoung-tack,KRX, Methods of forming capacitor electrodes having reduced susceptibility to oxidation.
  24. Bon-Jae Koo KR, Methods of forming ferroelectric memory cells.
  25. Park Young-soh,KRX ; Lee Sang-in,KRX ; Hwang Cheol-seong,KRX ; Hwang Doo-sup,KRX ; Cho Hag-Ju,KRX, Methods of forming integrated circuit capacitors using metal reflow techniques.
  26. Dreifus David L. ; Malta Dean M., Microelectronic structures including semiconductor islands.
  27. Simon, Andrew H.; Uzoh, Cyprian E., Open-bottomed via liner structure and method for fabricating same.
  28. Hsia Shouli Steve ; Wang Zhihai ; Chen Fred,TWX, Process for forming metal interconnect stack for integrated circuit structure.
  29. Collins, Dale W.; Lindgren, Joe, Semiconductor constructions.
  30. Collins, Dale W.; Lindgren, Joe, Semiconductor constructions; and methods for providing electrically conductive material within openings.
  31. Kobayashi, Kazuya; Sano, Yuichi; Tokuda, Daisuke; Tokuya, Hiroaki, Semiconductor device.
  32. Mochizuki Hiroshi,JPX ; Okuwada Kumi,JPX ; Kanaya Hiroyuki,JPX ; Hidaka Osamu,JPX ; Shuto Susumu,JPX ; Kunishima Iwao,JPX, Semiconductor device having ferroelectric capacitor structures.
  33. Tamio Satou JP, Semiconductor device including lead wiring protected by dual barrier films.
  34. Hayashi Yoshihiro,JPX ; Tanabe Nobuhiro,JPX ; Takeuchi Tsuneo,JPX ; Saito Shinobu,JPX, Semiconductor device with conductive plugs.
  35. Hideo Takagi JP; Kiyoshi Izumi JP; Wataru Futo JP; Satoshi Otsuka JP; Shigetaka Uji JP; Masataka Hoshino JP; Yukihiro Satoh JP; Koji Endo JP; Yuzuru Ohta JP; Nobuhiro Misawa JP, Semiconductor device with copper wiring and its manufacture method.
  36. Fukuzumi, Yoshiaki, Semiconductor device with tapered contact hole and wire groove.
  37. Fukuzumi, Yoshiaki, Semiconductor device with tapered contact hole and wire groove.
  38. Fukuzumi,Yoshiaki, Semiconductor device with tapered contact hole and wire groove.
  39. Koo Bon-Jae,KRX, Structure of a ferroelectric memory cell and method of fabricating it.
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