이 특허를 인용한 특허 (224)

1. Chandran, Shankar W.; Hendrickson, Scott; Jones, Gwendolyn D.; Venkataraman, Shankar; Yieh, Ellie, Accelerated plasma clean.

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2. Chandran,Shankar N.; Hendrickson,Scott; Jones,Gwendolyn D.; Venkataraman,Shankar; Yieh,Ellie, Accelerated plasma clean.

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3. Shankar N. Chandran ; Scott Hendrickson ; Gwendolyn D. Jones ; Shankar Venkataraman ; Ellie Yieh, Accelerated plasma clean.

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4. Nemani, Srinivas D.; Koshizawa, Takehito, Air gap process.

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5. Purayath, Vinod R.; Ingle, Nitin K., Air gaps between copper lines.

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6. Kang, Sean; Ko, Jungmin; Luere, Oliver, Airgap formation with damage-free copper.

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7. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum oxide selective etch.

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8. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum selective etch.

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9. Xue, Jun; Hsu, Ching-Mei; Li, Zihui; Godet, Ludovic; Wang, Anchuan; Ingle, Nitin K., Anisotropic gap etch.

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10. Birang, Manush; Kolte, Gregory L.; Doyle, Terry Lee; Johansson, Nils; Luscher, Paul E.; Poslavsky, Leonid, Apparatus and method for endpoint control and plasma monitoring.

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11. Khan, Anisul; Kumar, Ajay; Chinn, Jeffrey D.; Podlesnik, Dragan, Apparatus for performing self cleaning method of forming deep trenches in silicon substrates.

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12. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.

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13. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.

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14. Lubomirsky, Dmitry, Chamber with flow-through source.

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15. Lubomirsky, Dmitry, Chamber with flow-through source.

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16. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.

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17. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.

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18. Hanawa, Hiroji; Tanaka, Tsutomu; Collins, Kenneth S.; Al-Bayati, Amir; Ramaswamy, Kartik; Nguyen, Andrew, Chemical vapor deposition plasma reactor having plural ion shower grids.

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19. Wang, Xikun; Pandit, Mandar; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K.; Liu, Jie, Chlorine-based hardmask removal.

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20. Sun, Zhi-Wen; Jiang, Anbei; Huang, Tuo-Chuan, Cleaning of multicompositional etchant residues.

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21. Raaijmakers, Ivo; Van Bilsen, Franciscus B., Cleaning of semiconductor processing chambers.

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22. Raaijmakers, Ivo; Van Bilsen, Franciscus B., Cleaning of semiconductor processing chambers.

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23. Lau, Wesley George, Cleaning process residues from substrate processing chamber components.

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24. Wang, Xikun; Cui, Zhenjiang; Park, Soonam; Ingle, Nitin K., Cobalt-containing material removal.

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25. Lubomirsky, Dmitry; Kim, Sung Je, Conditioned semiconductor system parts.

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26. Hoinkis, Mark; Yan, Chun; Miyazoe, Hiroyuki; Joseph, Eric, Copper residue chamber clean.

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27. Jens Stolze DE, Detecting a process endpoint from a change in reflectivity.

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28. Laermer, Franz, Device and method for producing chlorine trifluoride and system for etching semiconductor substrates using this device.

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29. Park, Seung H.; Wang, Yunyu; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Differential silicon oxide etch.

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30. Purayath, Vinod R.; Wang, Anchuan; Ingle, Nitin K., Dopant etch selectivity control.

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31. Ranft, Craig; Helle, Wolfgang; Guerra, Robert; Cole, Brady F., Downstream surface cleaning process.

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32. Ueda, Masahisa; Kokaze, Yutaka; Endou, Mitsuhiro; Suu, Koukou, Dry cleaning method for plasma processing apparatus.

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33. Wang, Xikun; Hsu, Ching-Mei; Ingle, Nitin K.; Li, Zihui; Wang, Anchuan, Dry-etch for selective tungsten removal.

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34. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Wang, Yunyu; Lee, Young, Dry-etch for silicon-and-carbon-containing films.

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35. Ren, He; Yang, Jang-Gyoo; Baek, Jonghoon; Wang, Anchuan; Park, Soonam; Garg, Saurabh; Chen, Xinglong; Ingle, Nitin K., Dry-etch selectivity.

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36. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Dual discharge modes operation for remote plasma.

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37. Grimbergen Michael N. ; Lill Thorsten B., Endpoint detection for semiconductor processes.

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38. Sui, Zhifeng; Luscher, Paul E; Johansson, Nils; Welch, Michael D, Endpoint detection in substrate fabrication processes.

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39. Michael N. Grimbergen ; Thorsten B. Lill, Endpoint detection in the fabrication of electronic devices.

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40. Ingle, Nitin K.; Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Enhanced etching processes using remote plasma sources.

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41. Korolik, Mikhail; Ingle, Nitin K.; Zhang, Jingchun; Wang, Anchuan; Liu, Jie, Etch suppression with germanium.

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42. Yuen, Stephen; Jain, Mohit; Lill, Thorsten B., Etching a substrate in a process zone.

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43. Allen ; III Tuman Earl, Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacers.

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44. Allen, III, Tuman Earl, Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacers.

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45. Allen, III, Tuman Earl, Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacers.

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46. Allen, III, Tuman Earl, Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacers.

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47. Tuman Earl Allen, III, Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacers.

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48. Tuman Earl Allen, III, Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacers.

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49. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Even tungsten etch for high aspect ratio trenches.

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50. Purayath, Vinod R.; Ingle, Nitin K., Flash gate air gap.

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51. Goto, Haruhiro Harry; Harshbarger, William R.; Shang, Quanyuan; Law, Kam S., Fluorine process for cleaning semiconductor process chamber.

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52. Pandit, Mandar; Wang, Xikun; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Fluorine-based hardmask removal.

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53. Park, Seung; Wang, Xikun; Liu, Jie; Wang, Anchuan; Kim, Sang-jin, Gas-phase tungsten etch.

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54. Kim, Sung Je; Kalita, Laksheswar; Pareek, Yogita; Kadam, Ankur; Goradia, Prerna Sonthalia; Thakur, Bipin; Lubomirsky, Dmitry, Generation of compact alumina passivation layers on aluminum plasma equipment components.

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55. Korolik, Mikhail; Ingle, Nitin; Kioussis, Dimitri, Germanium etching systems and methods.

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56. Cho, Tae; Kang, Sang Won; Yang, Dongqing; Lu, Raymond W.; Hillman, Peter; Celeste, Nicholas; Tan, Tien Fak; Park, Soonam; Lubomirsky, Dmitry, Grooved insulator to reduce leakage current.

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57. Tran, Toan Q.; Malik, Sultan; Lubomirsky, Dmitry; Roy, Shambhu N.; Kobayashi, Satoru; Cho, Tae Seung; Park, Soonam; Venkataraman, Shankar, High temperature chuck for plasma processing systems.

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58. Chen, Zhijun; Li, Zihui; Ingle, Nitin K.; Wang, Anchuan; Venkataraman, Shankar, Highly selective doped oxide removal method.

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59. Fritzinger Larry B. ; Lee Cynthia C. ; Middlebrook Edward M. ; Sniegowski John M., In situ dry cleaning process for poly gate etch.

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60. Lo Chi-Hsin,CNX ; Cheu Hsing-Yuan,CNX, In-sit chamber cleaning method.

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61. Singh,Harmeet; Ullal,Saurabh J.; Gangadharan,Shibu, In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control.

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62. Chen,Xing; Holber,William M.; Cowe,Andrew Barnett; Georgelis,Eric; Bystyak,Ilya M.; Bortkiewicz,Andrzej, Inductively-coupled torodial plasma source.

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63. Chen, Xing; Holber, William M.; Cowe, Andrew Barnett; Georgelis, Eric; Bystyak, Ilya M.; Bortkiewicz, Andrzej, Inductively-coupled toroidal plasma source.

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64. Smith, Donald K.; Chen, Xing; Holber, William M.; Georgelis, Eric, Inductively-coupled toroidal plasma source.

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65. Chen, Xinglong; Lubomirsky, Dmitry; Venkataraman, Shankar, Insulated semiconductor faceplate designs.

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66. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.

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67. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.

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68. Purayath, Vinod R.; Thakur, Randhir; Ingle, Nitin K., Integrated oxide and nitride recess for better channel contact in 3D architectures.

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69. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated oxide recess and floating gate fin trimming.

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70. Chen, Xing; Smith, Donald K.; Holber, William M., Integrated plasma chamber and inductively-coupled toroidal plasma source.

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71. Frum, Coriolan I.; Sui, Zhifeng; Shan, Hongqing, Interferometric endpoint detection in a substrate etching process.

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72. Nguyen, Son T.; Lubomirsky, Dmitry, Layered thin film heater and method of fabrication.

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73. Hong, Sukwon; Tran, Toan; Mallick, Abhijit; Liang, Jingmei; Ingle, Nitin K., Low shrinkage dielectric films.

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74. Hsu, Ching-Mei; Ingle, Nitin K.; Hamana, Hiroshi; Wang, Anchuan, Low temperature gas-phase carbon removal.

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75. Mungekar, Hemant P.; Wu, Jing; Lee, Young S.; Wang, Anchuan, Low wet etch rate silicon nitride film.

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76. Tanaka, Tetsuhiro, Manufacturing method of crystalline semiconductor film and manufacturing method of semiconductor device.

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77. Omura, Mitsuhiro, Manufacturing method of semiconductor device.

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78. Purayath, Vinod R.; Thakur, Randhir; Ingle, Nitin K., Metal air gap.

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79. Hitoshi Nishio JP; Hideo Yamagishi JP; Masataka Kondo JP, Method and apparatus for manufacturing semiconductor device.

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80. Holber, William M.; Smith, John A.; Chen, Xing; Smith, Donald K., Method and apparatus for processing metal bearing gases.

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81. Holber, William M.; Smith, John A.; Chen, Xing; Smith, Donald K., Method and apparatus for processing metal bearing gases.

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82. Holber, William M.; Smith, John A.; Chen, Xing; Smith, Donald K., Method and apparatus for processing metal bearing gases.

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83. Mayer, Bruce E.; Chatham, III, Robert H.; Ingle, Nitin K.; Yuan, Zheng, Method and system for in-situ cleaning of semiconductor manufacturing equipment using combination chemistries.

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84. Nguyen, Huong Thanh; Barnes, Michael; Xia, Li-Qun; Yieh, Ellie, Method for cleaning a process chamber.

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85. Wu,Dingjun; Ji,Bing; Motika,Stephen Andrew; Karwacki, Jr.,Eugene Joseph, Method for cleaning deposition chambers for high dielectric constant materials.

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86. Branco, Walter G.; Qiao, Jianmiu, Method for cleaning plasma etch chamber structures.

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87. Hines Cynthia Marie ; Pinto James Nicholas, Method for deposition tool cleaning.

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88. Ji,Bing; Motika,Stephen Andrew; Pearlstein,Ronald Martin; Karwacki, Jr.,Eugene Joseph; Wu,Dingjun, Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials.

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89. Kang, Sean S.; Li, Si Yi; Sadjadi, S. M. Reza, Method for etching silicon carbide.

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90. Shin, Kyoung Choul; Mun, Seong Yeol, Method for fabricating semiconductor device.

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91. Shen, Yun-Hung, Method for forming electrical contacts through multi-level dielectric layers by high density plasma etching.

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92. Cheng, Yi-Lung; Tsan, Chun-Ching; Cheng, Wen-Kung; Wang, Yin-Lang, Method for improved cleaning in HDP-CVD process with reduced NF3 usage.

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93. Ichijo, Mitsuhiro; Kuriki, Kazutaka; Yokoi, Tomokazu; Endo, Toshiya, Method for manufacturing microcrystalline semiconductor and thin film transistor.

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94. Xia Li-Qun ; Pokharrna Himanshu ; Lim Tian-Hoe, Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process.

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95. Comita Paul B. ; Forstner Hali J. L. ; Ranganathan Rekha, Method of cleaning CVD cold-wall chamber and exhaust lines.

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96. San, Nelson Loke Chou; Kagami, Kenichi; Satoh, Kiyoshi, Method of cleaning a CVD reaction chamber using an active oxygen species.

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97. Danny Chien Lu ; Allen Zhao ; Peter Hsieh ; Hong Shih ; Li Xu ; Yan Ye, Method of cleaning a semiconductor device processing chamber after a copper etch process.

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98. Brett C. Richardson ; Duane Outka, Method of cleaning and conditioning plasma reaction chamber.

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99. Sakuma, Takeshi, Method of cleaning processing chamber of semiconductor processing apparatus.

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100. Suzuki, Koji, Method of conditioning an etching chamber and method of processing semiconductor substrate using the etching chamber.

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101. Ko, Jungmin, Method of fin patterning.

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102. Tien-Min Yuan TW; Shih-Chi Lai TW; Yen-Chung Feng TW; Tsung-Hua Wu TW, Method of in situ reactive gas plasma treatment.

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103. Katsumata, Hiroshi; Aoki, Katsuaki, Method of manufacturing semiconductor device, apparatus of manufacturing semiconductor device and semiconductor device.

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104. Huang Cheng-Hao,TWX ; Tang Wen-Hsiang,TWX ; Chen Pei-Hung,TWX, Method of metal etching with in-situ plasma cleaning.

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105. Blalock Guy ; Donohoe Kevin G., Method of modifying an RF circuit of a plasma chamber to increase chamber life and process capabilities.

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106. Blalock, Guy; Donohoe, Kevin G., Method of modifying an RF circuit of a plasma chamber to increase chamber life and process capabilities.

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107. Chan, Bor-Wen, Method of planarizing polysillicon plug.

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108. Appleyard, Nicholas John; Powell, Kevin, Method of processing substrates.

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109. Outka, Duane; Kim, Yousun; Chen, Anthony; Daugherty, John, Method of reducing aluminum fluoride deposits in plasma etch reactor.

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110. Ko, Yong Deuk; Oh, Se Jin; Jung, Chan Ouk; Hwang, Jeng H., Method of reducing particulates in a plasma etch chamber during a metal etch process.

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111. Sarigiannis, Demetrius; Basceri, Cem; Hill, Christopher W.; Derderian, Garo J., Method of removing residual contaminants from an environment.

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112. Sarigiannis,Demetrius; Basceri,Cem; Hill,Christopher W.; Derderian,Garo J., Method of removing residual contaminants from an environment.

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113. Wang, T. Frank, Method of uniformly etching refractory metals, refractory metal alloys and refractory metal silicides.

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114. Chin,Sheng Chi; Lin,Shy Jay, Method to reduce particle level for dry-etch.

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115. Xu, Songlin; Sun, Zhiwen; Podlesnik, Dragan; Qian, Xueyu, Methodologies to reduce process sensitivity to the chamber condition.

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116. Xu,Songlin; Lill,Thorsten, Methodology for in-situ and real-time chamber condition monitoring and process recovery during plasma processing.

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117. Li-Qun Xia ; Visweswaren Sivaramakrishnan ; Srinivas Nemani ; Ellie Yieh ; Gary Fong, Methods and apparatus for gettering fluorine from chamber material surfaces.

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118. Huston, Joel M.; Denny, Nicholas R.; Kao, Chien-Teh, Methods and apparatus for in-situ cleaning of a process chamber.

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119. Li, Zihui; Kao, Chia-Ling; Wang, Anchuan; Ingle, Nitin K., Methods for anisotropic control of selective silicon removal.

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120. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of SiN films.

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121. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Methods for etch of metal and metal-oxide films.

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122. Allen, III, Tuman Earl, Methods of forming silicon nitride spacers, and methods of forming dielectric sidewall spacers.

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123. Chow, Waiching; Williams, Raney; Lill, Thorsten B.; Chen, Arthur Y., Multiple stage process for cleaning process chambers.

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124. Chen, Zhijun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Non-local plasma oxide etch.

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125. Shang, Quanyuan; Yadav, Sanjay; Harshbarger, William R.; Law, Kam S., On-site cleaning gas generation for process chamber cleaning.

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126. Shang,Quanyuan; Yadav,Sanjay; Harshbarger,William R.; Law,Kam S., On-site cleaning gas generation for process chamber cleaning.

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127. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K.; Anthis, Jeffrey W.; Schmiege, Benjamin, Oxide and metal removal.

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128. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.

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129. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.

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130. Xu, Lin; Chen, Zhijun; Wang, Anchuan; Nguyen, Son T., Oxide etch selectivity systems and methods.

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131. Lubomirsky, Dmitry, Oxygen compatible plasma source.

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132. Chen, Xinglong; Yang, Jang-Gyoo; Tam, Alexander; Tam, Elisha, Pedestal with multi-zone temperature control and multiple purge capabilities.

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133. Yamazaki, Shunpei; Takayama, Toru; Sakama, Mitsunori; Abe, Hisashi; Uehara, Hiroshi; Ishiwata, Mika, Plasma CVD apparatus.

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134. Yamazaki, Shunpei; Takayama, Toru; Sakama, Mitsunori; Abe, Hisashi; Uehara, Hiroshi; Ishiwata, Mika, Plasma CVD apparatus.

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135. Yamazaki, Shunpei; Takayama, Toru; Sakama, Mitsunori; Abe, Hisashi; Uehara, Hiroshi; Ishiwata, Mika, Plasma CVD apparatus.

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136. Masuda, Toshio; Takahashi, Kazue; Suehiro, Mitsuru; Kaji, Tetsunori; Kanai, Saburo, Plasma etching apparatus and plasma etching method.

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137. Blalock Guy T. ; Becker David S. ; Donohoe Kevin G., Plasma etching methods.

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138. Blalock,Guy T.; Becker,David S.; Donohoe,Kevin G., Plasma etching methods.

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139. Donohoe Kevin G. ; Stocks Richard L., Plasma etching methods.

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140. Donohoe, Kevin G.; Stocks, Richard L., Plasma etching methods.

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141. Donohoe, Kevin G.; Stocks, Richard L., Plasma etching methods.

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142. Li,Si Yi; Sadjadi,S. M. Reza; Tietz,James V., Plasma etching of silicon carbide.

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143. Hanawa, Hiroji; Tanaka, Tsutomu; Collins, Kenneth S.; Al-Bayati, Amir; Ramaswamy, Kartik; Nguyen, Andrew, Plasma immersion ion implantation reactor having an ion shower grid.

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144. Hanawa, Hiroji; Tanaka, Tsutomu; Collins, Kenneth S.; Al-Bayati, Amir; Ramaswamy, Kartik; Nguyen, Andrew, Plasma immersion ion implantation reactor having multiple ion shower grids.

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145. Kanai, Saburo; Takahashi, Kazue; Okamura, Kouichi; Hamasaki, Ryoji; Ito, Satoshi, Plasma processing apparatus.

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146. Akahori Takashi,JPX ; Nakase Risa,JPX ; Oka Shinsuke,JPX, Plasma processing method.

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147. Kanai,Saburo; Takahashi,Kazue; Okamura,Kouichi; Hamasaki,Ryoji; Ito,Satoshi, Plasma processing method.

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148. Lubomirsky, Dmitry, Plasma processing system with direct outlet toroidal plasma source.

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149. Kitsunai Hiroyuki,JPX ; Tsumaki Nobuo,JPX ; Kakuta Shigeru,JPX ; Nojiri Kazuo,JPX ; Takahashi Kazue,JPX, Plasma treatment method and manufacturing method of semiconductor device.

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150. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Plasma-free metal etch.

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151. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Polarity control for remote plasma.

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152. Choi, Tom; Ko, Jungmin; Kang, Sean, Poly directional etch by oxidation.

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153. Bao-Ru Young TW; Chia-Shiung Tsai TW, Post etching treatment process for high density oxide etcher.

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154. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.

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155. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.

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156. Nallan Padmapani ; Chinn Jeffrey ; Yuen Stephen, Process for etching silicon-containing material on substrates.

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157. Kitsunai, Hiroyuki; Tanaka, Junichi; Fujii, Takashi; Yoshigai, Motohiko, Process for producing a semiconductor device including etching using a multi-step etching treatment having different gas compositions in each step.

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158. Huang Cheng-Hao,TWX ; Yen Ming-Shuo,TWX ; Chen Shih-Fang,TWX ; Tang Wen-Hsiang,TWX ; Chen Pei-Hung,TWX, Process to season and determine condition of a high density plasma etcher.

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159. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.

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160. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.

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161. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.

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162. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.

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163. Naik, Mehul; Ma, Paul F.; Nemani, Srinivas D., Protective via cap for improved interconnect performance.

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164. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry, Radial waveguide systems and methods for post-match control of microwaves.

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165. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.

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166. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.

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167. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.

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168. Chen, Zhijun; Zhang, Jingchun; Hsu, Ching-Mei; Park, Seung; Wang, Anchuan; Ingle, Nitin K., Radical-component oxide etch.

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169. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.

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170. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.

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171. Yang, Dongqing; Zhu, Lala; Wang, Fei; Ingle, Nitin K., Saving ion-damaged spacers.

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172. Chen, Zhijun; Huang, Jiayin; Wang, Anchuan; Ingle, Nitin, Selective SiN lateral recess.

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173. Wang, Xikun; Lei, Jianxin; Ingle, Nitin; Shaviv, Roey, Selective cobalt removal for bottom up gapfill.

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174. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.

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175. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.

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176. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.

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177. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.

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178. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.

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179. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.

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180. Citla, Bhargav; Ying, Chentsau; Nemani, Srinivas; Babayan, Viachslav; Stowell, Michael, Selective etch using material modification and RF pulsing.

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181. Wang, Xikun; Ingle, Nitin, Selective in situ cobalt residue removal.

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182. Hoinkis, Mark; Miyazoe, Hiroyuki; Joseph, Eric, Selective sputtering for pattern transfer.

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183. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.

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184. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.

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185. Wang, Xikun; Ingle, Nitin, Selective tungsten removal.

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186. Haruhiro Harry Goto ; William R. Harshbarger ; Kam S. Law, Selectively etching silicon using fluorine without plasma.

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187. Khan Anisul ; Kumar Ajay ; Chinn Jeffrey D. ; Podlesnik Dragan, Self cleaning method of forming deep trenches in silicon substrates.

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188. Pandit, Mandar B.; Wang, Anchuan; Ingle, Nitin K., Self-aligned process.

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189. Qian, Xue-Yu; Sun, Zhi-Wen; Jiang, Weinan; Chen, Arthur Y.; Yin, Gerald Zheyao; Yang, Ming-Hsun; Kuo, Ming-Hsun; Mui, David S. L.; Chinn, Jeffrey; Pan, Shaoher X.; Wang, Xikun, Self-cleaning etch process.

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190. Shen, Meihua; Jiang, Wei-nan; Yauw, Oranna; Chinn, Jeffrey, Self-cleaning process for etching silicon-containing material.

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191. Arnepalli, Ranga Rao; Goradia, Prerna Sonthalia; Visser, Robert Jan; Ingle, Nitin; Korolik, Mikhail; Biswas, Jayeeta; Lodha, Saurabh, Self-limiting atomic thermal etching systems and methods.

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192. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.

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193. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.

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194. Nguyen, Andrew; Ramaswamy, Kartik; Nemani, Srinivas; Howard, Bradley; Vishwanath, Yogananda Sarode, Semiconductor system assemblies and methods of operation.

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195. Ko, Jungmin; Choi, Tom; Ingle, Nitin; Kim, Kwang-Soo; Wou, Theodore, SiN spacer profile patterning.

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196. Park, Seung; Wang, Anchuan, Silicon etch process with tunable selectivity to SiO2 and other materials.

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197. Korolik, Mikhail; Ingle, Nitin K.; Wang, Anchuan; Xu, Jingjing, Silicon germanium processing.

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198. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Silicon oxide selective removal.

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199. Huang, Jiayin; Chen, Zhijun; Wang, Anchuan; Ingle, Nitin, Silicon pretreatment for nitride removal.

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200. Li, Zihui; Hsu, Ching-Mei; Zhang, Hanshen; Zhang, Jingchun, Silicon selective removal.

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201. Wei Liu ; Yiqiong Wang ; Maocheng Li ; Anisul Khan ; Shaoher Pan ; Dragan Podlesnik, Silicon trench etch using silicon-containing precursors to reduce or avoid mask erosion.

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202. Chen, Zhijun; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Silicon-carbon-nitride selective etch.

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203. Kim, Hun Sang; Choi, Jinhan; Koseki, Shinichi, Simplified litho-etch-litho-etch process.

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204. Xuechun Dai,SGX ; Chen Liang,SGX ; Ng Aik Kwang,SGX ; Tsai Young,SGX, Single wafer in-situ dry clean and seasoning for plasma etching process.

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205. Luere, Olivier; Kang, Sean S.; Nemani, Srinivas D., Spacer formation.

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206. Redeker Fred C. ; Moghadam Farhad ; Hanawa Hiroji ; Ishikawa Tetsuya ; Maydan Dan ; Li Shijian ; Lue Brian ; Steger Robert J. ; Wong Manus ; Wong Yaxin ; Sinha Ashok K., Symmetric tunable inductively coupled HDP-CVD reactor.

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207. Meder Martin G., System and method for flash photolysis cleaning of a semiconductor processing chamber.

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208. Savas, Stephen E.; Zajac, John; Guerra, Robert; Helle, Wolfgang, Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing.

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209. Leroy Luo ; Rene George ; Stephen E. Savas ; Craig Ranft ; Wolfgang Helle DE; Robert Guerra, Systems and methods for variable mode plasma enhanced processing of semiconductor wafers.

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210. Benjaminson, David; Lubomirsky, Dmitry, Thermal management systems and methods for wafer processing systems.

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211. Wang, Xikun; Pandit, Mandar; Wang, Anchuan; Ingle, Nitin K., Titanium nitride removal.

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212. Wang, Xikun; Xu, Lin; Wang, Anchuan; Ingle, Nitin K., Titanium oxide etch.

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213. Smith,Donald K.; Chen,Xing; Holber,William M.; Georgelis,Eric, Toroidal low-field reactive gas source.

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214. Lee,Sangheon; Kang,Sean S.; Sadjadi,S M Reza; Deshmukh,Subhash; Kim,Ji Soo, Treatment for corrosion in substrate processing.

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215. Gerald Zheyao Yin ; Xue-Yu Qian ; Patrick L. Leahey ; Jonathan D. Mohn ; Waiching Chow ; Arthur Y. Chen ; Zhi-Wen Sun ; Brian K. Hatcher, Treatment of etching chambers using activated cleaning gas.

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216. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Tungsten separation.

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217. Wang, Xikun; Williams, Scott; Pan, Shaoher X., Two-stage etching process.

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218. Wang, Xikun; Williams, Scott; Pan, Shaoher X., Two-stage self-cleaning silicon etch process.

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219. Turner, Michael, Use of inductively-coupled plasma in plasma-enhanced chemical vapor deposition reactor to improve film-to-wall adhesion following in-situ plasma clean.

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220. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., V trench dry etch.

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221. Liu, Jie; Purayath, Vinod R.; Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Vertical gate separation.

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222. Li, Shijian; Carman, David; Radhakrishnan, Chander, Waferless clean in dielectric etch process.

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223. Li, Shijian; Carman, David; Radhakrishnan, Chander, Waferless clean in dielectric etch process.

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224. Chen Ta-Chin,TWX ; Chang Wen-Ruey,TWX ; Hsu Hsew-Chu,TWX ; Huang Ming-Je,TWX ; Tsang Sheung Kan,TWX ; Ting Yuk Hong,TWX, Waferless clean process of a dry etcher.

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