[특허]Method for preventing substrate backside deposition during a chemical vapor deposition operation

[미국특허] Method for preventing substrate backside deposition during a chemical vapor deposition operation 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-016/04 C23C-016/52
출원번호	US-0506246 (1995-07-24)
발명자 / 주소	Thomas Michael E. (Milpitas CA) van de Van Everhardus P. (Cupertino CA) Broadbent Eliot K. (San Jose CA)
출원인 / 주소	National Semiconductor Corp. (Santa Clara CA 02) Novellus Systems, Inc. (San Jose CA 02)
인용정보	피인용 횟수 : 33 인용 특허 : 13

초록 ▼

A suitable inert thermal gas such as argon is introduced onto the backside of wafers being processed in a CVD reactor during the deposition of tungsten or other metals and silicides, to avoid deposition of material on the backside of the wafers being processed. Each process station includes a gas dispersion head disposed over a platen. The platen has a circular depression for receiving a wafer, and an annular groove provided in the floor of the depression, near the wall thereof. Heated and pressurized backside gas is introduced into the groove so that the wafer is maintained in a position above the floor of the depression but still within it. In this manner, backside gas vents from beneath the edge of the wafer on the platen and prevents the process gases from contacting the wafer backside. The backside gas is also used for levitating the wafer in a transfer region above the platen, so that the wafer can be transported to or from the platen with a suitable wafer transfer mechanism. One suitable transfer mechanism is a multi-armed spindle, the arms being respective pairs of tines. Another suitable transfer mechanism is a removable structure in which the platens are provided with respective heaters, and the platen-heater assemblies are supported by respective tubes from a central support block. Gas and electrical power are furnished to the platen-heater assemblies from the central support block.

대표청구항 ▼

A method of preventing backside deposition on a semiconductor substrate during a chemical vapor deposition operation in a process chamber, the semiconductor substrate having frontside and backside surfaces meeting at an edge, the method comprising: receiving the substrate over a platen; introducing a reactive gas into the process chamber; introducing a volume of backside gas into a backside region between the backside surface of the substrate and the platen so as to levitate the substrate above the platen, the backside gas lacking the reactive gas; and retaining the substrate above the platen without sealing the edge of the substrate against the platen; wherein the volume of backside gas establishes an outward radial flow of the backside gas from the backside region and past the edge of the substrate to exclude the reactive gas from contact with the backside surface of the substrate.

이 특허에 인용된 특허 (13)

Wang David N. (Saratoga CA) Lei Lawrence C. (Cupertino CA) Chang Mei (Cupertino CA) Leung Cissy (Fremont CA), Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials.
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Sherstinsky Semyon (San Francisco CA) Harris Charles C. (Los Gatos CA) Chang Mei (Cupertino CA) Du Bois Dale R. (Los Gatos CA) Roberts James F. (Campbell CA) Telford Susan (Cupertino CA) Rose Ronald , Clamping ring and susceptor therefor.
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Sinha Ashok K. (Palo Alto CA) Ghanayem Steve G. (Sunnyvale CA) Rana Virendra V. S. (Los Gatos CA), Deposition apparatus using a perforated pumping plate.
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Selbrede Steven C. (San Jose CA), Differential pressure CVD chuck.
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Thomas Michael E. (Milpitas CA) van de Van Everhardus P. (Cupertino CA) Broadbent Eliot K. (San Jose CA), Gas-based backside protection during substrate processing.
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van de Ven Everhardus P. (Cupertino CA) Broadbent Eliot K. (San Jose CA) Benzing Jeffrey C. (San Jose CA) Chin Barry L. (Sunnyvale CA) Burkhart Christopher W. (San Jose CA), Gas-based backside protection during substrate processing.
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van de Ven Everhardus P. (Cupertino CA) Broadbent Eliot K. (San Jose CA) Benzing Jeffrey C. (San Jose CA) Chin Barry L. (Sunnyvale CA) Burkhart Christopher W. (San Jose CA), Gas-based backside protection during substrate processing.
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van de Ven Everhardus P. (Cupertino CA) Broadbent Eliot K. (San Jose CA) Benzing Jeffrey C. (San Jose CA) Chin Barry L. (Sunnyvale CA) Burkhart Christopher W. (San Jose CA), Gas-based substrate protection during processing.
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Mizuno Shigeru (Fuchu JPX) Morisako Isamu (Fukuoka JPX), Low pressure vapor phase growth apparatus.
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Ghanayem Steve (Sunnyvale CA) Rana Virendra (Los Gatos CA), Metal chemical vapor deposition process using a shadow ring.
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King Edward M. (Melbourne Beach FL) Gsteiger Kurt E. (Indialantic FL) Raby Joseph S. (W. Melbourne FL), Method for selective deposition of tungsten on silicon.
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Goela Jitendra S. (Andover MA) Jaworski Roy D. (Exeter NH) Taylor Raymond L. (Saugus MA), Method to prevent backside growth on substrates in a vapor deposition system.
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Keeley Joseph T. (Woburn MA) Goela Jitendra S. (Andover MA) Pickering Michael A. (Dracut MA) Taylor Raymond L. (Saugus MA), Selective area chemical vapor deposition.
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이 특허를 인용한 특허 (33)

Lenz, Eric H., Airflow management for low particulate count in a process tool.
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Ries, Michael J.; Yang, Charles Chiun-Chieh; Standley, Robert W., Epitaxial silicon wafer free from autodoping and backside halo and a method and apparatus for the preparation thereof.
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Takahashi Ichiro,JPX, Heater unit for chemical vapor deposition systems.
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Stevens, Craig Lyle, High throughput architecture for semiconductor processing.
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Fernando Cesar R. ; Patel Narendra, Method for cleaning semiconductor processing equipment by reducing particles.
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Pascal, Roy Winston; Bliven, Brian M., Method for controlling airflow on a backside of a semiconductor wafer during spin processing.
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Hopfner, Joachim, Method for processing wafer by applying layer to protect the backside during a tempering step and removing contaminated portions of the layer.
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Lee Jiun-Chung,TWX ; Wang Hui-Ling,TWX ; Dun Jowei ; Chou Ken-Shen,TWX, Method for reducing stress and improving step-coverage of tungsten interconnects and plugs.
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Tetsuya Taguwa JP, Method of carrying out plasma-enhanced chemical vapor deposition.
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Gould-Choquette Adrienne ; Merchant Sailesh, Method of chemical vapor depositing tungsten films.
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Charles Chiun-Chieh Yang ; Robert W. Standley, Modified susceptor for use in chemical vapor deposition process.
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Yang, Charles Chiun-Chieh; Standley, Robert W., Modified susceptor for use in chemical vapor deposition process.
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Yanagita, Kazutaka; Kohda, Mitsuharu; Sakaguchi, Kiyofumi; Fujimoto, Akira, Plate member separating apparatus and method.
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Gurary, Alexander I.; Belousov, Mikhail; Boguslavskiy, Vadim; Mitrovic, Bojan, Processing methods and apparatus with temperature distribution control.
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Cheng Kuo-Hsien,TWX ; Fan Chen-Mei,TWX, Recipe design to prevent tungsten (W) coating on wafer backside for those wafers with poly Si on wafer backside.
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Lenz, Eric H., Reduction of particle contamination produced by moving mechanisms in a process tool.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Method for preventing substrate backside deposition during a chemical vapor deposition operation 원문보기