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Junction termination for SiC Schottky diode 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-031/0312
  • H01L-027/095
  • H01L-029/47
  • H01L-029/812
출원번호 US-0821159 (1997-03-20)
우선권정보 SE-0000156 (1997-01-21)
발명자 / 주소
  • Bakowski Mietek,SEX
  • Gustafsson Ulf,SEX
출원인 / 주소
  • ABB Research Ltd., CHX
대리인 / 주소
    Pollock, Vande Sande & Priddy
인용정보 피인용 횟수 : 90  인용 특허 : 8

초록 ▼

A semiconductor diode structure with a Schottky junction, wherein a metal contact and a silicon carbide semiconductor layer of a first conducting type form the junction and wherein the edge of the junction exhibits a junction termination divided into a transition belt (TB) having gradually increasin

대표청구항 ▼

[ We claim:] [1.] A semiconductor device comprising a first conducting type layer and a metal contact layer forming a Schottky junction, the first conducting type later being made of silicon carbide (SiC), and wherein said junction is provided with an edge termination comprising a transition belt (T

이 특허에 인용된 특허 (8)

  1. Bhatnagar Mohit (Mesa AZ) Weitzel Charles E. (Mesa AZ) Thero Christine (Scottsdale AZ), High breakdown voltage silicon carbide transistor.
    상세보기
  2. Ferla Giuseppe (Catania ITX) Musumeci Salvatore (Riposto ITX), Method for the manufacture of semiconductor devices with planar junctions having a variable charge concentration and a v.
    상세보기
  3. Baliga Bantval J. (Raleigh NC), Method of fabricating high voltage silicon carbide MESFETs.
    상세보기
  4. Roche Marcel (Paris FRX) Litot Jean P. (Paris FRX), Method of making Schottky diode with an improved voltage behavior.
    상세보기
  5. Bujatti, Marina; Cetronio, Antonio, Method of making a field effect transistor with modified Schottky barrier depletion region.
    상세보기
  6. Arthur Stephen D. (Scotia NY) Temple Victor A. K. (Jonesville NY), Method of making high breakdown voltage semiconductor device.
    상세보기
  7. Temple Victor A. K. (Saratoga NY) Tantraporn Wirojana (Schenectady NY), Method of making high breakdown voltage semiconductor device.
    상세보기
  8. Baliga Bantval J. (Raleigh NC), Silicon carbide power MOSFET with floating field ring and floating field plate.
    상세보기

이 특허를 인용한 특허 (90)

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