초록 ▼

A channel waveguide structure which can be incorporated into VLSI (very large scale integration) integrated circuits uses a SiGe (silicon germanium) alloy core and Si (silicon) top and bottom cladding layers. The core may consist of only a SiGe alloy layer or it may be formed as a superlattice conta

A channel waveguide structure which can be incorporated into VLSI (very large scale integration) integrated circuits uses a SiGe (silicon germanium) alloy core and Si (silicon) top and bottom cladding layers. The core may consist of only a SiGe alloy layer or it may be formed as a superlattice containing Si layers alternating with SiGe alloy layers. LOCOS (locally oxidized silicon) regions are formed on the top cladding layer at spaced locations thereby defining lateral boundaries of channels in the core.

대표청구항 ▼

[ We claim:] [1.] A method of making an optoelectronic integrated circuit comprising the steps of:forming on a silicon substrate a first layer of silicon including buried regions of n+ or p+ doping;growing a second layer of silicon over the first layer;growing a core comprising at least one layer of

[ We claim:] [1.] A method of making an optoelectronic integrated circuit comprising the steps of:forming on a silicon substrate a first layer of silicon including buried regions of n+ or p+ doping;growing a second layer of silicon over the first layer;growing a core comprising at least one layer of a silicon alloy;growing a third layer of silicon over the core layer;depositing LOCOS protect layers of polysilicon and silicon nitride;patterning and etching the LOCOS protect layers thereby creating exposed regions on the third layer of silicon;growing oxide in the exposed regions; andremoving the LOCOS protect layers.