초록 ▼

A dry etch process for use in the fabrication of integrated circuits which use SiN etch stop layers is disclosed. The process is conducted in a reactive-ion etch reactor and employs a gaseous etchant mixture comprised of octaflourocyclobutane (C.sub.4 F.sub.8), carbon monoxide (CO) and Ar. The speci

A dry etch process for use in the fabrication of integrated circuits which use SiN etch stop layers is disclosed. The process is conducted in a reactive-ion etch reactor and employs a gaseous etchant mixture comprised of octaflourocyclobutane (C.sub.4 F.sub.8), carbon monoxide (CO) and Ar. The specific process parameters effect the formation of a polymer on SiN but not on oxide, thereby resulting in a very high etch rate selectivity of the oxide to the nitride.

대표청구항 ▼

[ We claim:] [1.] A dry etch process for use in the fabrication of an integrated circuit structure having a silicon nitride etch stop layer, said process comprising the steps of:providing a semiconductor wafer having a plurality of gate stacks etched thereon, said gate stacks including a silicon nit

[ We claim:] [1.] A dry etch process for use in the fabrication of an integrated circuit structure having a silicon nitride etch stop layer, said process comprising the steps of:providing a semiconductor wafer having a plurality of gate stacks etched thereon, said gate stacks including a silicon nitride etch stop layer;depositing an oxide layer over said silicon nitride etch stop layer; andetching said oxide layer in an etch chamber of a reactive-ion etch reactor by means of a gas etchant mixture including delivering C.sub.4 F.sub.8 to said etch chamber at a flow rate within a range of 4 to 20 sccm; delivering CO to said etch chamber at a flow rate within a range of 0 to 200 sccm; and delivering an inert gas to said etch chamber at a flow rate within a range of 50 to 250 sccm.