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Method for controlled selective polysilicon etching 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/302
출원번호 US-0589776 (1996-01-22)
발명자 / 주소
  • Li Li
  • Hawthorne Richard C.
출원인 / 주소
  • Micron Technology, Inc.
대리인 / 주소
    Norman, Nydegger & Seeley
인용정보 피인용 횟수 : 18  인용 특허 : 18

초록

An ammonia-based etchant is employed, in dilute aqueous solution and preferably with a moderating agent, to etch polysilicon. Ammonium fluoride and ammonium hydroxide are the preferred etchants, with acetic acid and isopropyl alcohol the preferred moderating agents for use with the respective etchan

대표청구항

[ What is claimed and desired to be secured by United States Letters Patent is:] [1.] A method for etching polysilicon during the fabrication of a semiconductor device, said method comprising etching a polysilicon film in a wet etch solution comprising a dilute solution of ammonium fluoride etchant,

이 특허에 인용된 특허 (18)

  1. Kaneko Hideo (Kanagawa-ken JPX) Tokunaga Katsushi (Kanagawa-ken JPX) Tawara Yoshio (Kanagawa-ken JPX) Tamai Noboru (Nagano-ken JPX) Nakazato Yasuaki (Nagano-ken JPX), Magnetic recording medium preparation.
  2. Kim Choon H. (Ichon-kun KRX), Method for fabricating capacitor of semiconductor memory device.
  3. Ahn Ji-hong (Seoul KRX) Seo Young-woo (Kyungsangbak-do KRX), Method for manufacturing a capacitor of an integrated semiconductor device having increased surface area.
  4. Woo Sang H. (Kyoungki KRX), Method for wet etching polysilicon.
  5. Hirota Toshiyuki (Tokyo JPX), Method of fabricating a micro-trench storage capacitor.
  6. Fazan Pierre C. (Boise ID) Keeth Brent (Boise ID), Method of forming a capacitor and a capacitor construction.
  7. Jun Young-Kwon (Seoul KRX), Method of making memory cell capacitor.
  8. Thakur Randhir P. S. (Boise ID), Method to prepare hemi-spherical grain (HSG) silicon using a fluorine based gas mixture and high vacuum anneal.
  9. Austin Larry W. (Hinesburg VT) Linde Harold G. (Richmond VT) Nakos James S. (Essex VT), Methods and compositions for the selective etching of silicon.
  10. Chen Bomy A. (Dutchess County NY) Bronner Gary B. (Westchester County NY) Nguyen Son V. (Dutchess County NY), Non-random sub-lithography vertical stack capacitor.
  11. Martin John E. (Capistrano Beach CA) Ng Wing P. (Irvine CA), PNAF Etchant for aluminum and silicon.
  12. Bassous ; Ernest ; Liu ; Cheng-Yih, Polycrystalline silicon etching with tetramethylammonium hydroxide.
  13. Rioult ; Jean-Pierre ; Fabien ; Raymond, Preferential etchant for aluminium oxide.
  14. Amini Zahra H. (Cupertino CA) Latchford Ian S. (Cupertino CA), Process for etching polysilicon layer in formation of integrated circuit structure.
  15. Lim Chan (Kyoungki-do KRX), Process for fabricating a stashed capacitor in a semiconductor device.
  16. Szwejkowski Chester (Palisades NY) Latchford Ian S. (Cupertino CA) Namose Isamu (Nagano JPX) Tsuchida Kazumi (Narita JPX), Process for removal of residues remaining after etching polysilicon layer in formation of integrated circuit structure.
  17. Szwejkowski Chester (Palisades NY) Latchford Ian S. (Cupertino CA) Namose Isamu (Nagano JPX) Tsuchida Kazumi (Narita JPX), Process for removal of residues remaining after etching polysilicon layer in formation of integrated circuit structure.
  18. Bailey William L. (Scottsdale AZ) Coleman Michael G. (Tempe AZ) Harris Cynthia B. (Phoenix AZ) Lesk Israel A. (Scottsdale AZ), Texture etching of silicon: method.

이 특허를 인용한 특허 (18)

  1. Kwang-wook Lee KR; Kun-tack Lee KR; Yong-sun Ko KR; Chang-lyong Song KR, Aqueous cleaning solution for removing contaminants surface of circuit substrate cleaning method using the same.
  2. Yates,Donald L, Compositions for dissolution of low-k dielectric film, and methods of use.
  3. Yates, Donald L, Compositions for dissolution of low-k dielectric films, and methods of use.
  4. Yates, Donald L, Compositions for dissolution of low-k dielectric films, and methods of use.
  5. Yates,Donald L, Compositions for dissolution of low-k dielectric films, and methods of use.
  6. Yates,Donald L, Compositions for dissolution of low-k dielectric films, and methods of use.
  7. Yates, Donald L., Compositions for use in semiconductor devices.
  8. Yates, Donald L., Compositions for use in semiconductor devices.
  9. Legerton, Jerome A.; Meyers, William E., Contact lens and methods of manufacture and fitting such lenses and computer program product.
  10. Fucsko, Janos; Waldo, Grady S.; Wiggins, Joseph; Raghu, Prashant, Etch compositions and methods of processing a substrate.
  11. Fucsko,Janos; Waldo,Grady S.; Wiggins,Joseph; Raghu,Prashant, Etch compositions and methods of processing a substrate.
  12. Leon Chang TW; Chien-Hung Chen TW, Method for detecting organic contamination by using hemispherical-grain polysilicon layer.
  13. Kim, Beom-Yong; Lee, Kee-Jeung; Ji, Yun-Hyuck; Lee, Seung-Mi; Koo, Jae-Hyoung; Do, Kwan-Woo; Park, Kyung-Woong; Ahn, Ji-Hoon; Park, Woo-Young, Method for fabricating capacitor with high aspect ratio.
  14. Jenq J. S. Jason,TWX ; Wu Der-Yuan,TWX, Method of fabricating capacitor with high capacitance.
  15. Hess, Dennis W.; Kamal, Tazrien, Method of stripping photoresist using alcohols.
  16. Kil Joon-ing,KRX ; Jun Pil-kwon,KRX ; Yun Min-sang,KRX ; Yun Young-hwan,KRX ; Kwack Gyu-hwan,KRX ; Chon Sang-moon,KRX, Methods of employing aqueous cleaning compositions in manufacturing microelectronic devices.
  17. Furukawa, Toshiharu; Hakey, Mark C.; Holmes, Steven J.; Horak, David V., Semiconductor with contact contacting diffusion adjacent gate electrode.
  18. Ku, Shao-Yen, Successful and easy method to remove polysilicon film.
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