초록 ▼

A method of manufacturing self-aligned titanium salicide is provided which includes the steps of forming a LOCOS isolation region on a silicon substrate, forming a titanium layer on the surface of the silicon substrate, performing a first two-step rapid thermal anneal on the silicon substrate in an

A method of manufacturing self-aligned titanium salicide is provided which includes the steps of forming a LOCOS isolation region on a silicon substrate, forming a titanium layer on the surface of the silicon substrate, performing a first two-step rapid thermal anneal on the silicon substrate in an ambient filled with hydrogen and nitrogen gases to convert the titanium layer into a titanium salicide layer, selectively etching the silicon substrate to remove the titanium layer that has not reacted with the silicon substrate, and performing a second two-step rapid thermal anneal on the silicon substrate in an ambient filled with hydrogen and nitrogen gases. Each of the two-step rapid thermal anneals include a first pre-heat step and a second anneal step.

대표청구항 ▼

[ We claim:] [1.] A method of manufacturing self-aligned titanium salicide, comprising the steps of:(a) forming a LOCOS isolation region on a silicon substrate having a surface;(b) forming a titanium layer on the surface of the silicon substrate;(c) performing a first two-step rapid thermal anneal o

[ We claim:] [1.] A method of manufacturing self-aligned titanium salicide, comprising the steps of:(a) forming a LOCOS isolation region on a silicon substrate having a surface;(b) forming a titanium layer on the surface of the silicon substrate;(c) performing a first two-step rapid thermal anneal on the silicon substrate in an ambient filled with hydrogen and nitrogen gases to convert the titanium layer into a titanium salicide layer, wherein the first two-step rapid thermal anneal includes a first rapid-thermal-annealing step performed at a first temperature for about 5 to 20 seconds, and a second rapid-thermal-annealing step performed at a second temperature for about 10 to 30 seconds, with the second temperature being greater than the first temperature;(d) selectively etching the silicon substrate to remove the titanium layer that has not reacted with the silicon substrate; and(e) performing a second two-step rapid thermal anneal on the silicon substrate in an ambient filled with hydrogen and nitrogen gases, wherein the second two-step rapid thermal anneal includes a third rapid-thermal-annealing step performed at a third temperature for about 5 to 20 seconds, with the third temperature being greater than the second temperature, and a fourth rapid-thermal-annealing step performed at a fourth temperature for about 10 to 30 seconds, with the fourth temperature being greater than the third temperature.