초록 ▼

A method and apparatus for ramping down the deposition pressure in a SACVD process. The present invention also provides a method and apparatus for subsequently ramping up the pressure for a PECVD process in such a manner as to prevent unwanted reactions which could form a weak interlayer interface.

A method and apparatus for ramping down the deposition pressure in a SACVD process. The present invention also provides a method and apparatus for subsequently ramping up the pressure for a PECVD process in such a manner as to prevent unwanted reactions which could form a weak interlayer interface. In particular, the deposition pressure in the SACVD process is ramped down by stopping the flow of the silicon containing gas (preferably TEOS) and/or the carrier gas (preferably helium), while diluting the flow of ozone with oxygen. A ramp down of the pressure starts at the same time. The diluting of the ozone with oxygen limits reactions with undesired reactants at the end of a process.

대표청구항 ▼

[ What is claimed is:] [1.] A chemical vapor deposition apparatus comprising:a substrate processing chamber;a substrate support configured to hold a substrate in said substrate processing chamber during a chemical vapor deposition operation;a gas distribution system configured to introduce gases int

[ What is claimed is:] [1.] A chemical vapor deposition apparatus comprising:a substrate processing chamber;a substrate support configured to hold a substrate in said substrate processing chamber during a chemical vapor deposition operation;a gas distribution system configured to introduce gases into said substrate processing chamber, said gas distribution system including appropriate valves, supply lines and other equipment necessary to flow gases into the substrate processing chamber;a chamber pressurization system configured to set a pressure level within said substrate processing chamber;a controller operatively coupled to control said gas distribution system, and said chamber pressurization system; anda memory, coupled to said controller, said memory comprising a computer-readable medium having a computer-readable program embodied therein for directing the operation of said chemical vapor deposition system, said computer-readable program comprising:computer instructions to control said gas distribution system to:(i) flow ozone, a carrier gas and a first silicon-containing gas into the substrate processing chamber, then subsequently;(ii) stop the flow of said first silicon-containing gas and dilute the flow of ozone by flowing a dilutant gas into the substrate processing chamber; andcomputer instructions to control said chamber pressurization system to set pressure within said chamber to a first pressure level when the ozone, carrier gas and silicon-containing gases are flowed into the chamber and to decrease said first pressure level to a second pressure level when the flow of said silicon-containing gas is stopped and said ozone flow is diluted with said dilutent gas.