초록

A method of depositing good quality thermal CVD silicon oxide layers over a PECVD TEOS/oxygen silicon oxide layer comprising forming an interstitial layer by ramping down the power in the last few seconds of the PECVD deposition.

대표청구항 ▼

A process for depositing a plasma enhanced CVD (PECVD) silicon oxide layer on a substrate in a reactor comprising: a) depositing a PECVD silicon oxide layer from a plasma of tenaethylorthosilane (TEOS) and oxygen at a power level of about 5-10 watts per square centimeter on a semiconductor substrate

A process for depositing a plasma enhanced CVD (PECVD) silicon oxide layer on a substrate in a reactor comprising: a) depositing a PECVD silicon oxide layer from a plasma of tenaethylorthosilane (TEOS) and oxygen at a power level of about 5-10 watts per square centimeter on a semiconductor substrate, b) reducing the power while maintaining the TEOS and oxygen gas flows in the reactor, thereby forming an intermediate PECVD silicon oxide layer on the PECVD silicon oxide layer and c) depositing a thermal CVD silicon oxide layer on the intermediate PECVD silicon oxide layer by a thermal chemical vapor deposition process from a precursor gas mixture of TEOS, ozone and oxygen, so that the overlying thermal CVD silicon oxide layer has less surface sensitivity due to the presence of the intermediate PECVD silicon oxide layer.