초록 ▼

The present invention is a chemical vapor deposition of tungsten(W-CVD)process for growing low stress and void free interconnect. The method of this invention utilizes two steps W-CVD process by two chambers. The first step, filling tungsten metal completely in the contact hole, is performed in the

The present invention is a chemical vapor deposition of tungsten(W-CVD)process for growing low stress and void free interconnect. The method of this invention utilizes two steps W-CVD process by two chambers. The first step, filling tungsten metal completely in the contact hole, is performed in the first chamber. The second step, forming a tungsten layer for interconnect, is performed in the second chamber. Because of using two different chambers, the method of this invention can adjust the temperature of the process and the gas flow of the WF.sub.6 vapor of the process for different required the two steps. The second step of chemical vapor deposition of tungsten by adjusting the temperature and the gas flow has reduced greatly the stress of the second conductive layer. Moreover, the first step of chemical vapor deposition of tungsten by adjusting the temperature and the gas flow prevents voids in the contact hole or in the via hole. Thus, growing low stress and voids free interconnect is accomplished by the method of this invention.

대표청구항 ▼

[ The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows:] [1.] A chemical vapor deposition of tungsten (W-CVD) process for growing low stress and void free interconnect, the method comprising:forming a dielectric layer on a substrate, said sub

[ The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows:] [1.] A chemical vapor deposition of tungsten (W-CVD) process for growing low stress and void free interconnect, the method comprising:forming a dielectric layer on a substrate, said substrate having a conductive area, said dielectric layer covering said conductive area;forming a hole through said dielectric layer to uncover at least a portion of said conductive area;forming a first conductive layer with a thickness of about 500 to 9000 .ANG. on said dielectric layer and completely filling in said hole, wherein said first conductive layer is formed in a first chamber; andforming a second conductive layer on said first conductive layer, wherein said second conductive layer is formed in a second chamber, wherein the temperature of said second chamber is different from the temperature of said first chamber.