초록 ▼

A method of filling a feature in a substrate with tungsten without forming a seam is presented. The tungsten is deposited by a thermal chemical vapor deposition (CVD) process using hydrogen (H2) and tungsten hexafluoride (WF6) precursor gases. The H2 to WF6 flow rate ratio is greater than 40 to 1, s

A method of filling a feature in a substrate with tungsten without forming a seam is presented. The tungsten is deposited by a thermal chemical vapor deposition (CVD) process using hydrogen (H2) and tungsten hexafluoride (WF6) precursor gases. The H2 to WF6 flow rate ratio is greater than 40 to 1, such as from 40 to 1 to 100 to 1. The substrate temperature during deposition is less than 300 degrees Celsius (° C.) and the processing pressure during deposition is greater than 300 Torr.

대표청구항 ▼

1. A method for depositing a tungsten film on a substrate, comprising: positioning a substrate in a substrate process chamber, wherein the substrate has a feature formed therein; anddepositing the tungsten film inside the feature without forming a seam by: flowing a reducing gas and a tungsten conta

1. A method for depositing a tungsten film on a substrate, comprising: positioning a substrate in a substrate process chamber, wherein the substrate has a feature formed therein; anddepositing the tungsten film inside the feature without forming a seam by: flowing a reducing gas and a tungsten containing gas into the process chamber, wherein a flow ratio of the reducing gas to the tungsten containing gas is greater than 40 to 1;heating the substrate to a temperature that is less than 300 degrees Celsius; andmaintaining a processing pressure of greater than 300 Torr during the depositing of the tungsten film. 2. The method of claim 1, wherein the tungsten film is deposited by a thermal chemical vapor deposition process. 3. The method of claim 2, wherein the substrate is heated to 250 degrees Celsius. 4. The method of claim 1, wherein the processing pressure is about 350 Torr. 5. The method of claim 1, wherein the reducing gas comprises hydrogen gas. 6. The method of claim 1, wherein the tungsten containing gas comprises tungsten hexafluoride. 7. The method of claim 1, wherein the feature has an aspect ratio of at least 40. 8. The method of claim 1, wherein the flow ratio of the reducing gas to the tungsten containing gas is from 60 to 1 to 80 to 1. 9. A method for depositing a tungsten film on a substrate, comprising: positioning a substrate in a substrate process chamber, wherein the substrate has a feature formed therein; anddepositing the tungsten film inside the feature without forming a seam by: flowing a hydrogen gas and a tungsten hexafluoride gas into the process chamber, wherein a flow ratio of the reducing gas to the tungsten containing gas is greater than 40 to 1;heating the substrate to a temperature that is less than 300 degrees Celsius; andmaintaining a processing pressure of greater than 300 Torr during the depositing of the tungsten film. 10. The method of claim 9, wherein the tungsten film is deposited by a thermal chemical vapor deposition process. 11. The method of claim 10, wherein the substrate is heated to 250 degrees Celsius. 12. The method of claim 9, wherein the processing pressure is about 350 Torr. 13. The method of claim 9, wherein the feature has an aspect ratio of at least 40. 14. The method of claim 9, wherein the flow ratio of the reducing gas to the tungsten containing gas is from 60 to 1 to 80 to 1. 15. The method of claim 9, wherein the substrate is heated to 250 degrees Celsius.