초록 ▼

A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardenin

A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

대표청구항 ▼

[ What is claimed is:] [1.] A plasma etch process comprising:providing a chamber within which to carry out said process;supporting an article to be processed on a support in the chamber;supplying a process gas containing at least etchant and polymer precursor materials;providing, in addition to said

[ What is claimed is:] [1.] A plasma etch process comprising:providing a chamber within which to carry out said process;supporting an article to be processed on a support in the chamber;supplying a process gas containing at least etchant and polymer precursor materials;providing, in addition to said process gas, a source material of silicon or carbon in said chamber;generating a plasma within said chamber;maintaining said source material at a temperature greater than that temperature required to scavenge fluorine.