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Polishing composition including an inhibitor of tungsten etching 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23F-001/44
  • C23F-011/00
출원번호 US-0901803 (1997-07-28)
발명자 / 주소
  • Grumbine Steven K.
  • Streinz Christopher C.
  • Hoglund Eric W. G.
출원인 / 주소
  • Cabot Corporation
인용정보 피인용 횟수 : 50  인용 특허 : 22

초록

A chemical mechanical polishing composition comprising a composition capable of etching tungsten and one inhibitor of tungsten etching and methods for using the composition to polish tungsten containing substrates.

대표청구항 ▼

[ What we claim is:] [1.] A chemical mechanical polishing composition comprising:a compound that is capable of etching tungsten; and at least one inhibitor of tungsten etching wherein the inhibitor of tungsten etching is a compound including at least one functional group selected from nitrogen conta

이 특허에 인용된 특허 (22)

  1. Rooney Terence R. (Bromsgrove GB2), Aluminum polishing compositions.
    상세보기
  2. Payne Charles C. (Aurora IL), Aqueous silica compositions for polishing silicon wafers.
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  3. Ferrante Mario (Laxou FRX) Boucher Raymond (Villers Les Nancy FRX), Automated process for the manufacture of flexible plates and apparatus for implementing the process.
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  4. Mueller Brian L. ; Streinz Christopher C. ; Grumbine Steven K., Composition and slurry useful for metal CMP.
    상세보기
  5. Brancaleoni Gregory (Newark DE) Cook Lee M. (Steelville PA), Compositions and methods for polishing.
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  6. Brancaleoni Gregory (Newark DE) Cook Lee M. (Steelville PA), Compositions and methods for polishing.
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  7. Romberger John A. (Oak Park IL) Payne Charles C. (Aurora IL), Low sodium, low metals silica polishing slurries.
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  8. James Kristi L. (Phoenix AZ) Shields A. L. (Scottsdale AZ), Metal etch solution and method.
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  9. Allman Derryl D. J. (Colorado Springs CO), Method for polishing a wafer.
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  10. Yu Chris C. (Boise ID) Doan Trung T. (Boise ID) Laulusa Alan E. (Boise ID), Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing.
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  11. Doan Trung T. (Boise ID), Method of etching back of tungsten layers on semiconductor wafers, and solution therefore.
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  12. Sandhu Gurtej S. (Boise ID), Method of performing a field implant subsequent to field oxide fabrication by utilizing selective tungsten deposition to.
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  13. Obeng Yaw Samuel, Method of polishing.
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  14. Krishna Vepa (St. Charles MO) Wisnieski Michael S. (O\Fallon MO) Illig Lois (Troy MO), Method of rough polishing semiconductor wafers to reduce surface roughness.
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  15. Farkas Janos (Austin TX) Jairath Rahul (Austin TX) Stell Matt (Folsom CA) Tzeng Sing-Mo (Austin TX), Method of using additives with silica-based slurries to enhance selectivity in metal CMP.
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  16. Kaufman Vlasta Brusic ; Wang Shumin, Multi-oxidizer slurry for chemical mechanical polishing.
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  17. Sasaki Yasutaka,JPX ; Hayasaka Nobuo,JPX ; Kaneko Hisashi,JPX ; Hirabayashi Hideaki,JPX ; Higuchi Masatoshi,JPX, Polishing agent and polishing method using the same.
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  18. Kodama Hitoshi (Aichi-ken JPX) Iwasa Shoji (Aichi-ken JPX), Polishing composition.
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  19. Payne Charles C. (Chicago IL), Process for polishing semi-conductor materials.
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  20. Payne Charles C. (Aurora IL), Silica sol compositions for polishing silicon wafers.
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  21. Cadien Kenneth C. (Portland OR) Feller Daniel A. (Portland OR), Slurries for chemical mechanical polishing.
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  22. Ericson ; Harry ; Fredriksson ; Carl Otto, Solutions for chemically polishing surfaces of copper and its alloys.
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이 특허를 인용한 특허 (50)

  1. Raman, Vijay Immanuel; Gubaydullin, Ilshat; Brands, Mario; Li, Yuzhuo; Peretolchin, Maxim, Aqueous polishing agent and graft copolymers and their use in a process for polishing patterned and unstructured metal surfaces.
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  2. Costas, Wesley D.; Lack, Craig D.; Saucy, Daniel A., CMP polishing composition for semiconductor devices containing organic polymer particles.
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  3. Wang, Ying-Lang; Lin, Shih-Chi; Cheng, Yi-Lung; Liu, Chi-Wen; Yoo, Ming-Hua; Cheng, Wen-Kung; Wang, Jiann-Kwang, CMP process leaving no residual oxide layer or slurry particles.
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  4. Hirabayashi, Hideaki; Sakurai, Naoaki; Cho, Toshitsura; Shimizu, Shumpei; Kato, Katsuhiro; Saito, Akiko, COPPER-BASED METAL POLISHING COMPOSITION, METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, POLISHING COMPOSITION, ALUMINUM-BASED METAL POLISHING COMPOSITION, AND TUNGSTEN-BASED METAL POLISHING COMPOS.
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  5. Steven K. Grumbine ; Christopher C. Streinz ; Brian L. Mueller, Catalytic reactive pad for metal CMP.
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  6. Miller, Anne E.; Feller, A. Daniel; Cadien, Kenneth C., Ceric-ion slurry for use in chemical-mechanical polishing.
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  7. Lee, Tsung-Ho; Lee, Kang-Hua; Yeh, Tsui-Ping, Chemical mechanical abrasive composition for use in semiconductor processing.
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  8. Wrschka, Peter; Simpson, Alexander, Chemical mechanical polishing (CMP) process using fixed abrasive pads.
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  9. Ho, Lin-Chen; Tsai, Wei-Wen; Lee, Cheng-Ping, Chemical mechanical polishing method for tungsten.
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  10. Hsu, Chia-Jung; Ho, Yun-Lung; Chen, Neng-Kuo; Chueh, Wen-Feng; Sun, Sey-Ping; Chang, Song-Yuan, Chemical mechanical polishing method using slurry composition containing N-oxide compound.
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  11. Hsu, Chia-Jung; Ho, Yun-Lung; Chen, Neng-Kuo; Chueh, Wen-Feng; Sun, Sey-Ping; Chang, Song-Yuan, Chemical mechanical polishing method using slurry composition containing N-oxide compound.
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  12. Feeney Paul M. ; Krywanczyk Timothy C. ; David Lawrence D. ; Tiersch Matthew T. ; White Eric J., Chemical mechanical polishing slurry and method for polishing metal/oxide layers.
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  13. Wang, Shumin; Kaufman, Vlasta Brusic, Chemical mechanical polishing systems and methods for their use.
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  14. Wang,Shumin; Kaufman,Vlasta Brusic, Chemical mechanical polishing systems and methods for their use.
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  15. Paul M. Feeney ; Timothy C. Krywanczyk ; Lawrence D. David ; Matthew T. Tiersch ; Eric J. White, Chemical-mechanical-polishing slurry and method for polishing metal/oxide layers.
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  16. Fang, Mingming; Mueller, Brian L.; Dirksen, James A., Composition and method for planarizing surfaces.
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  17. Grover, Gautam S.; Mueller, Brian L.; Wang, Shumin, Composition for oxide CMP.
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  18. Grumbine, Steven; Dysard, Jeffrey; Fu, Lin; Ward, William; Whitener, Glenn, Composition for tungsten CMP.
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  19. Grumbine, Steven; Dysard, Jeffrey; Fu, Lin; Ward, William; Whitener, Glenn, Composition for tungsten CMP.
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  20. Grumbine, Steven; Dysard, Jeffrey; Fu, Lin; Ward, William; Whitener, Glenn, Composition for tungsten CMP.
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  21. Fu, Lin; Dysard, Jeffrey; Grumbine, Steven, Composition for tungsten buffing.
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  22. Diane J. Hymes, Copper interconnect seed layer treatment methods and apparatuses for treating the same.
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  23. Miller, Anne E., Copper polish slurry for reduced interlayer dielectric erosion and method of using same.
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  24. Miller, Anne E., Copper polish slurry for reduced interlayer dielectric erosion and method of using same.
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  25. Miller, Anne E., Copper polish slurry for reduced interlayer dielectric erosion and method of using same.
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  26. Siddiqui, Junaid Ahmed; Castillo, Daniel Hernandez; Aragaki, Steven Masami; Richards, Robin Edward, Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers.
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  27. Siddiqui,Junaid Ahmed; Castillo,Daniel Hernandez; Aragaki,Steven Masami; Richards,Robin Edward, Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers.
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  28. Wenski, Guido; Glas, Johann; Altmann, Thomas; Heier, Gerhard, Double-side polishing process with reduced scratch rate and device for carrying out the process.
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  29. Danielson, Donald; Huang, Tzeun-luh; Scovell, Dawn L.; Willis, Keith, Etchant formulation for selectively removing thin films in the presence of copper, tin, and lead.
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  31. Dunton,Samuel V.; Radigan,Steven J., Method for cleaning slurry particles from a surface polished by chemical mechanical polishing.
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  32. Abe, Mitsugu; Iiyama, Masamitsu, Method for recovering a used slurry.
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  33. Grumbine, Steven; Dysard, Jeffrey, Mixed abrasive tungsten CMP composition.
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  35. Ohno, Koji; Horikawa, Chiyo; Sakai, Kenji; Ina, Katsuyoshi, Polishing composition.
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  36. Ohno,Koji; Horikawa,Chiyo; Sakai,Kenji; Tamai,Kazusei; Ina,Katsuyoshi, Polishing composition and method for forming wiring structure using the same.
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  37. Rader W. Scott ; Shemo David M. ; Owaki Toshiki, Polishing composition and method for producing a memory hard disk.
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  39. Vacassy, Robert; Khanna, Dinesh N.; Simpson, Alexander, Polishing composition for a tungsten-containing substrate.
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  40. Wang, Shumin; Grumbine, Steven K.; Streinz, Christopher C.; Hoglund, Eric W. G., Polishing composition for metal CMP.
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  43. Gaku Minamihaba JP; Hiroyuki Yano JP, Slurry for CMP and CMP method.
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  47. Chopra, Dinesh; Sinha, Nishant, Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods.
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  48. Chopra, Dinesh; Sinha, Nishant, Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods.
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  49. Chen,Zhan; Vacassy,Robert; Bayer,Benjamin; Khanna,Dinesh, Tunable selectivity slurries in CMP applications.
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  50. Thomas,Terence M.; De Nardi,Stephan; Godfrey,Wade, Tungsten polishing solution.
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