초록 ▼

Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing apparatus such as a steady stay flow of gas develop

Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing apparatus such as a steady stay flow of gas develops between the ring and showerhead. A cylindrical structure extends between the gas-dispersing ring and a showerhead to contain the gas over the showerhead yielding a small boundary layer over the substrate to ensure efficient uniform deposition of a film on a substrate surface. In the one embodiment of the present invention the showerhead is bias with RF energy such that it acts as an electrode to incite a plasma proximate with the substrate for PECVD. The cylinder is isolated from the showerhead such as by a quartz insulator ring to prevent ignition of a plasma within the cylinder, or alternatively, the cylinder is fabricated of quartz material. The RF showerhead utilizes small gas-dispersing holes to further prevent ignition of a plasma within the cylinder. The very small showerhead-to-substrate spacing and the efficient delivery of the plasma and reacting gases produces low temperature CVD and PECVD of films on the substrate.

대표청구항 ▼

[ What is claimed is:] [1.] A method for depositing a film on a substrate by chemical vapor deposition comprising:positioning said substrate within an enclosed chamber;introducing reactant gases into the chamber opposite said substrate through a reactant gas supply element spaced from said substrate

[ What is claimed is:] [1.] A method for depositing a film on a substrate by chemical vapor deposition comprising:positioning said substrate within an enclosed chamber;introducing reactant gases into the chamber opposite said substrate through a reactant gas supply element spaced from said substrate;positioning a gas dispersing showerhead with gas-dispersing holes between the supply element and said substrate, the showerhead facing the substrate and spaced about one inch or less from said substrate; andcoupling a hollow cylinder between the reactant gas supply element and the showerhead, the cylinder spacing the showerhead in the range of 2 to 4 inches from the reactant gas supply element;directing the reactant gases through the cylinder to confine the gases over the showerhead electrode and produce a concentrated plasma proximate the showerhead;biasing the showerhead with RF energy such that the showerhead is operable as an electrode;exciting the reactant gases with the showerhead electrode and directing the reactant gases through the showerhead to form a plasma and deposit a film on said substrate by plasma enhanced chemical vapor deposition;whereby to yield improved reactant gas flow over said substrate and more efficient chemical vapor deposition of a film on said substrate.