[특허]Chemical vapor deposition process for depositing tungsten

[미국특허] Chemical vapor deposition process for depositing tungsten 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-016/14
출원번호	US-0857658 (1997-05-16)
발명자 / 주소	Rajagopalan Ravi Ghanayem Steve Yamazaki Manabu,JPX Ohtsuka Keiichi,JPX Maeda Yuji,JPX
출원인 / 주소	Applied Materials, Inc.
대리인 / 주소	Townsend and Townsend and Crew
인용정보	피인용 횟수 : 98 인용 특허 : 12

초록 ▼

A multiple step chemical vapor deposition process for depositing a tungsten layer on a substrate. A first step of the deposition process includes a nucleation step in which WF.sub.6 and SiH.sub.4 are introduced into a deposition chamber. Next, the flow of WF.sub.6 and SiH.sub.4 are stopped and diborane is introduced into the chamber for between 5-25 seconds. Finally, during a bulk deposition step, the WF.sub.6 is reintroduced into the chamber along with H.sub.2 and B.sub.2 H.sub.6 flows to deposit a tungsten layer on the substrate. In a preferred embodiment, the bulk deposition step also introduces nitrogen into the process gas.

대표청구항 ▼

[ What is claimed is:] [1.] A chemical vapor deposition process for depositing a tungsten film on a substrate, said process comprising:(a) placing a substrate in a deposition zone;(b) introducing a tungsten-containing source and a first reduction agent into said deposition zone during a nucleation process stage;(c) during a first process stage after said nucleation process stage, introducing a group III or V hydride into said deposition zone without introducing a tungsten-containing source into said deposition zone; and(d) during a second process stage after said first stage,(i) introducing a process gas comprising a tungsten-containing source, a group III or V hydride and a second reduction agent into said deposition zone, and(ii) maintaining the deposition zone at process conditions suitable for depositing a tungsten layer on said substrate.

이 특허에 인용된 특허 (12)

Emesh Ismail T. (Cumberland CAX), Deposition of tungsten.
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Chang Mei (Cupertino CA) Leung Cissy (Fremont CA) Wang David N. (Saratoga CA) Cheng David (San Jose CA), Process for CVD deposition of tungsten layer on semiconductor wafer.
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Chang Mei (Cupertino CA) Wang David N. (Saratoga CA), Process for selective deposition of tungsten on semiconductor wafer.
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Izumi Hirohiko (Sagamihara JPX), .
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A	생활필수품
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A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Chemical vapor deposition process for depositing tungsten 원문보기

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[미국특허] Chemical vapor deposition process for depositing tungsten 원문보기

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