초록 ▼

There is disclosed a method of recycling a delaminated wafer produced as a by-product in producing an SOI wafer according to a hydrogen ion delaminating method by reprocessing it for reuse as a silicon wafer, wherein at least polishing of the delaminated wafer for removing of a step in the periphera

There is disclosed a method of recycling a delaminated wafer produced as a by-product in producing an SOI wafer according to a hydrogen ion delaminating method by reprocessing it for reuse as a silicon wafer, wherein at least polishing of the delaminated wafer for removing of a step in the peripheral part of the delaminated wafer and heat treatment in a reducing atmosphere containing hydrogen are conducted as the reprocessing. There are provided a method of appropriately reprocessing a delaminated wafer produced as a by-product in a hydrogen ion delaminating method to reuse it as a silicon wafer actually, and particularly, a method of reprocessing an expensive wafer such as an epitaxial wafer many times for reuse, to improve productivity of SOI wafer having a high quality SOI layer, and to reduce producing cost.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of recycling a delaminated wafer produced as a by-product in producing an SOI wafer by reprocessing it for reuse as a silicon wafer, wherein the delaminated wafer is obtained according to a hydrogen ion delaminating method in which hydrogen ions or rare gas ion

[ What is claimed is:] [1.]1. A method of recycling a delaminated wafer produced as a by-product in producing an SOI wafer by reprocessing it for reuse as a silicon wafer, wherein the delaminated wafer is obtained according to a hydrogen ion delaminating method in which hydrogen ions or rare gas ions are implanted into the surface of a silicon wafer to be used as a bond wafer in order to form a fine bubble layer within the wafer, the ion-implanted silicon wafer is superposed on a base wafer such that the ion-implanted surface comes into close contact with the surface of the base wafer, heat treatment is performed to delaminate a portion of the ion-implanted wafer while the fine bubble layer is used as a delaminating plane, andwherein at least polishing of the delaminated wafer for removing of a step in the peripheral part of the delaminated wafer and heat treatment in a reducing atmosphere containing hydrogen are conducted as the reprocessing.