초록 ▼

A method for making a ULSI MOSFET chip includes forming the gate of a transistor on a silicon substrate, covering the gate with a SiON protective layer, and then implanting a pre-amorphization high dose Si or Ge implant into the substrate. Next, dopant is pre-implanted into the substrate to promote

A method for making a ULSI MOSFET chip includes forming the gate of a transistor on a silicon substrate, covering the gate with a SiON protective layer, and then implanting a pre-amorphization high dose Si or Ge implant into the substrate. Next, dopant is pre-implanted into the substrate to promote subsequent formation of source and drain extensions, with the SiON layer protecting the gate from the pre-amorphization high dose Si or Ge and from the dopant. Undoped polysilicon and polygermanium is then deposited onto the substrate adjacent the gate at relatively low temperatures (600.degree. C.) to establish elevated source and drain regions without excessively thermally stressing the chip. The SiON layer is removed from the gate, and the gate and elevated source and drain regions are implanted with dopant, followed by rapid thermal annealing to form the source and drain extensions in the substrate below the gate. The gate and elevated source and drain regions are then silicidized.

대표청구항 ▼

[ What is claimed is:] [1.]1. A semiconductor device including at least one transistor including a gate disposed on a silicon substrate and elevated source and drain regions on the substrate next to the gate, the source and drain regions including at least polysilicon and/or polygermanium, wherein t

[ What is claimed is:] [1.]1. A semiconductor device including at least one transistor including a gate disposed on a silicon substrate and elevated source and drain regions on the substrate next to the gate, the source and drain regions including at least polysilicon and/or polygermanium, wherein the source and drain regions and the gate are silicidized, the gate having a single non-silicidized region and a single silicidized region.