$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

300 mm CVD chamber design for metal-organic thin film deposition 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B05C-011/06
출원번호 US-0421779 (1999-10-19)
발명자 / 주소
  • David T. Or
  • Keith K. Koai
  • Fufa Chen
  • Lawrence C. Lei
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Moser, Patterson & Sheridan LLP
인용정보 피인용 횟수 : 200  인용 특허 : 4

초록

The present invention relates to plasma-enhanced chemical vapor deposition (PECVD) and related chamber hardware. Embodiments of the present invention include a PECVD system for depositing a film of titanium nitride from a TDMAT precursor. The present invention broadly provides a chamber, a gas deliv

대표청구항

1. A faceplate for a chemical vapor deposition chamber showerhead assembly, comprising:(a) a central monolithic portion comprising an upper face and a lower face and including a plurality of gas outlet holes extending between the upper face and the lower face; and (b) an annular raised shoulder conc

이 특허에 인용된 특허 (4)

  1. Umotoy Salvador P. ; Lei Lawrence C. ; Nguyen Anh N. ; Chiao Steve H., Dual gas faceplate for a showerhead in a semiconductor wafer processing system.
  2. Zhao Jun ; Luo Lee ; Jin Xiao Liang ; Wang Jia-Xiang ; Wolff Stefan ; Sajoto Talex, High temperature, high deposition rate process and apparatus for depositing titanium layers.
  3. Foster Robert F. ; Hillman Joseph T. ; LeBlanc Rene E., Method for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor.
  4. Wang David N. (Cupertino) White John M. (Hayward) Law Kam S. (Union City) Leung Cissy (Union City) Umotoy Salvador P. (Pittsburg) Collins Kenneth S. (San Jose) Adamik John A. (San Ramon) Perlov Ilya , Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planar.

이 특허를 인용한 특허 (200)

  1. Nemani, Srinivas D.; Koshizawa, Takehito, Air gap process.
  2. Purayath, Vinod R.; Ingle, Nitin K., Air gaps between copper lines.
  3. Kang, Sean; Ko, Jungmin; Luere, Oliver, Airgap formation with damage-free copper.
  4. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum oxide selective etch.
  5. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum selective etch.
  6. Xue, Jun; Hsu, Ching-Mei; Li, Zihui; Godet, Ludovic; Wang, Anchuan; Ingle, Nitin K., Anisotropic gap etch.
  7. Sung, Edward; Smith, Colin F.; Hamilton, Shawn M., Anti-transient showerhead.
  8. Granneman, Ernst H. A., Apparatus and method for atomic layer deposition on substrates.
  9. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Apparatus for an improved deposition shield in a plasma processing system.
  10. Kilpela, Olli; Saanila, Ville; Li, Wei-Min; Elers, Kai-Erik; Kostamo, Juhana; Raaijmakers, Ivo; Granneman, Ernst, Atomic layer deposition reactor.
  11. Escher,Gary; Allen,Mark A., Barrier layer for a processing element and a method of forming the same.
  12. Rocha Alvarez, Juan Carlos; Balasubramanian, Ganesh; Cho, Tom K.; Padhi, Deenesh; Nowak, Thomas; Kim, Bok Hoen; M'Saad, Hichem; Raj, Daemian, Blocker plate bypass to distribute gases in a chemical vapor deposition system.
  13. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.
  14. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.
  15. Lubomirsky, Dmitry, Chamber with flow-through source.
  16. Lubomirsky, Dmitry, Chamber with flow-through source.
  17. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.
  18. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.
  19. Lee,Ho, Chemical vapor deposition apparatus.
  20. Wang, Xikun; Pandit, Mandar; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K.; Liu, Jie, Chlorine-based hardmask removal.
  21. Wang, Xikun; Cui, Zhenjiang; Park, Soonam; Ingle, Nitin K., Cobalt-containing material removal.
  22. Lubomirsky, Dmitry; Kim, Sung Je, Conditioned semiconductor system parts.
  23. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Conformal oxide dry etch.
  24. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Conformal oxide dry etch.
  25. Hoinkis, Mark; Yan, Chun; Miyazoe, Hiroyuki; Joseph, Eric, Copper residue chamber clean.
  26. Zhu, Lina; Kang, Sean S.; Nemani, Srinivas D.; Kao, Chia-Ling, Delicate dry clean.
  27. Park, Seung H.; Wang, Yunyu; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Differential silicon oxide etch.
  28. Park, Seung H.; Wang, Yunyu; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Differential silicon oxide etch.
  29. Keller, Ernst; White, John M.; Tiner, Robin L.; Kucera, Jiri; Choi, Soo Young; Park, Beom Soo; Starr, Michael, Diffuser gravity support.
  30. Keller,Ernst; White,John M.; Tiner,Robin L.; Kucera,Jiri; Choi,Soo Young; Park,Beom Soo; Starr,Michael, Diffuser gravity support.
  31. Choi, Soo Young; White, John M., Diffuser plate with slit valve compensation.
  32. White, John M.; Tiner, Robin L.; Chang, Yeh Kurt, Diffuser support.
  33. Purayath, Vinod R.; Wang, Anchuan; Ingle, Nitin K., Dopant etch selectivity control.
  34. Zhang, Jingchun; Ingle, Nitin K.; Wang, Anchuan, Dry etch process.
  35. Kim, Sang Hyuk; Yang, Dongqing; Lee, Young S.; Jung, Weon Young; Kim, Sang-jin; Hsu, Ching-Mei; Wang, Anchuan; Ingle, Nitin K., Dry-etch for selective oxidation removal.
  36. Wang, Xikun; Hsu, Ching-Mei; Ingle, Nitin K.; Li, Zihui; Wang, Anchuan, Dry-etch for selective tungsten removal.
  37. Wang, Xikun; Hsu, Ching-Mei; Ingle, Nitin K.; Li, Zihui; Wang, Anchuan, Dry-etch for selective tungsten removal.
  38. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Wang, Yunyu; Lee, Young, Dry-etch for silicon-and-carbon-containing films.
  39. Ren, He; Yang, Jang-Gyoo; Baek, Jonghoon; Wang, Anchuan; Park, Soonam; Garg, Saurabh; Chen, Xinglong; Ingle, Nitin K., Dry-etch selectivity.
  40. Ren, He; Yang, Jang-Gyoo; Baek, Jonghoon; Wang, Anchuan; Park, Soonam; Garg, Saurabh; Chen, Xinglong; Ingle, Nitin K., Dry-etch selectivity.
  41. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Dual discharge modes operation for remote plasma.
  42. Kent, Martin A.; Toure, Abron; Golovato, Stephen N., Electrical coupling between chamber parts in electronic device processing equipment.
  43. Ingle, Nitin K.; Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Enhanced etching processes using remote plasma sources.
  44. Korolik, Mikhail; Ingle, Nitin K.; Zhang, Jingchun; Wang, Anchuan; Liu, Jie, Etch suppression with germanium.
  45. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Even tungsten etch for high aspect ratio trenches.
  46. Purayath, Vinod R.; Ingle, Nitin K., Flash gate air gap.
  47. Pandit, Mandar; Wang, Xikun; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Fluorine-based hardmask removal.
  48. Katz, Dan; Buchberger, Jr., Douglas A.; Ye, Yan; Hagen, Robert B.; Zhao, Xiaoye; Kumar, Ananda H.; Chiang, Kang-Lie; Noorbakhsh, Hamid; Wang, Shiang-Bau, Gas distribution plate electrode for a plasma receptor.
  49. Kang, Ho-Chul, Gas distributor and apparatus using the same.
  50. Keller, Ernst, Gas sealing skirt for suspended showerhead in process chamber.
  51. Park, Seung; Wang, Xikun; Liu, Jie; Wang, Anchuan; Kim, Sang-jin, Gas-phase tungsten etch.
  52. Kim, Sung Je; Kalita, Laksheswar; Pareek, Yogita; Kadam, Ankur; Goradia, Prerna Sonthalia; Thakur, Bipin; Lubomirsky, Dmitry, Generation of compact alumina passivation layers on aluminum plasma equipment components.
  53. Korolik, Mikhail; Ingle, Nitin; Kioussis, Dimitri, Germanium etching systems and methods.
  54. Cho, Tae; Kang, Sang Won; Yang, Dongqing; Lu, Raymond W.; Hillman, Peter; Celeste, Nicholas; Tan, Tien Fak; Park, Soonam; Lubomirsky, Dmitry, Grooved insulator to reduce leakage current.
  55. Tran, Toan Q.; Malik, Sultan; Lubomirsky, Dmitry; Roy, Shambhu N.; Kobayashi, Satoru; Cho, Tae Seung; Park, Soonam; Venkataraman, Shankar, High temperature chuck for plasma processing systems.
  56. Chen, Zhijun; Li, Zihui; Ingle, Nitin K.; Wang, Anchuan; Venkataraman, Shankar, Highly selective doped oxide removal method.
  57. Sabri, Mohamed; Lingampalli, Ramkishan Rao; Leeser, Karl F., Hybrid ceramic showerhead.
  58. Chen, Xinglong; Lubomirsky, Dmitry; Venkataraman, Shankar, Insulated semiconductor faceplate designs.
  59. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.
  60. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.
  61. Purayath, Vinod R.; Thakur, Randhir; Ingle, Nitin K., Integrated oxide and nitride recess for better channel contact in 3D architectures.
  62. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated oxide recess and floating gate fin trimming.
  63. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  64. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  65. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  66. Sapre, Kedar; Ingle, Nitin; Tang, Jing, Intrench profile.
  67. Sapre, Kedar; Ingle, Nitin; Tang, Jing, Intrench profile.
  68. Nguyen, Son T.; Lubomirsky, Dmitry, Layered thin film heater and method of fabrication.
  69. Ishikawa, Tetsuya; Tam, Alexander; Quach, David H., Lid assembly for a substrate processing chamber.
  70. Stacey, David; Prather, Zach; Allinger, Jonathan, Lid liner for chemical vapor deposition chamber.
  71. Hsu, Ching-Mei; Ingle, Nitin K.; Hamana, Hiroshi; Wang, Anchuan, Low temperature gas-phase carbon removal.
  72. Purayath, Vinod R.; Thakur, Randhir; Ingle, Nitin K., Metal air gap.
  73. Nishimoto, Shinya; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  74. Nishimoto,Shinya; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  75. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  76. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  77. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved bellows shield in a plasma processing system.
  78. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved bellows shield in a plasma processing system.
  79. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved deposition shield in a plasma processing system.
  80. Nishimoto, Shinya; Mitsuhashi, Kouji; Saigusa, Hidehito; Takase, Taira; Nakayama, Hiroyuki, Method and apparatus for an improved optical window deposition shield in a plasma processing system.
  81. Nishimoto,Shinya; Mitsuhashi,Kouji; Saigusa,Hidehito; Takase,Taira; Nakayama,Hiroyuki, Method and apparatus for an improved optical window deposition shield in a plasma processing system.
  82. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved upper electrode plate in a plasma processing system.
  83. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved upper electrode plate in a plasma processing system.
  84. Nishimoto, Shinya; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system.
  85. Nishimoto,Shinya; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system.
  86. Soininen, Pekka J.; Lindfors, Sven, Method and apparatus for depositing thin films on a surface.
  87. Fink, Steven T., Method and apparatus for improved baffle plate.
  88. Todorow, Valentin N.; Holland, John P.; Willwerth, Michael D., Method and apparatus for stable plasma processing.
  89. Todorow, Valentin N.; Holland, John P.; Willwerth, Michael D., Method and apparatus for stable plasma processing.
  90. Escher, Gary; Allen, Mark A.; Kudo, Yasuhisa, Method for adjoining adjacent coatings on a processing element.
  91. Kao, Chien-Teh; Chou, Jing-Pei (Connie); Lai, Chiukin (Steven); Umotoy, Sal; Huston, Joel M.; Trinh, Son; Chang, Mei; Yuan, Xiaoxiong (John); Chang, Yu; Lu, Xinliang; Wang, Wei W.; Phan, See-Eng, Method for front end of line fabrication.
  92. Ko, Jungmin, Method of fin patterning.
  93. Tzu, Gwo-Chuan; Yuan, Xiaoxiong; Khandelwal, Amit; Wang, Benjamin Cheng; Gelatos, Avgerinos V.; Wu, Kai; Karazim, Michael P.; Lin, Jing; Cuvalci, Olkan, Methods and apparatus for thermal based substrate processing with variable temperature capability.
  94. Li, Zihui; Kao, Chia-Ling; Wang, Anchuan; Ingle, Nitin K., Methods for anisotropic control of selective silicon removal.
  95. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of SiN films.
  96. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of metal and metal-oxide films.
  97. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Methods for etch of metal and metal-oxide films.
  98. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of sin films.
  99. Hong, Sukwon; Hamana, Hiroshi; Liang, Jingmei, Methods of reducing substrate dislocation during gapfill processing.
  100. Balasubramanian, Ganesh; Rocha-Alvarez, Juan Carlos; Cho, Tom K.; Raj, Daemian, Methods of uniformity control for low flow process and chamber to chamber matching.
  101. Chen, Zhijun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Non-local plasma oxide etch.
  102. Chen, Zhijun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Non-local plasma oxide etch.
  103. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K.; Anthis, Jeffrey W.; Schmiege, Benjamin, Oxide and metal removal.
  104. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
  105. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
  106. Xu, Lin; Chen, Zhijun; Wang, Anchuan; Nguyen, Son T., Oxide etch selectivity systems and methods.
  107. Lubomirsky, Dmitry, Oxygen compatible plasma source.
  108. Yang, Haichun; Lu, Xinliang; Kao, Chien-Teh; Chang, Mei, Passivation layer formation by plasma clean process to reduce native oxide growth.
  109. Chen, Xinglong; Yang, Jang-Gyoo; Tam, Alexander; Tam, Elisha, Pedestal with multi-zone temperature control and multiple purge capabilities.
  110. Fink, Steven T., Plasma processing system and baffle assembly for use in plasma processing system.
  111. Lubomirsky, Dmitry, Plasma processing system with direct outlet toroidal plasma source.
  112. Choi, Soo Young; Park, Beom Soo; White, John M.; Tiner, Robin L., Plasma uniformity control by gas diffuser curvature.
  113. Choi, Soo Young; White, John M.; Wang, Qunhua; Hou, Li; Kim, Ki Woon; Kurita, Shinichi; Won, Tae Kyung; Anwar, Suhail; Park, Beom Soo; Tiner, Robin L., Plasma uniformity control by gas diffuser hole design.
  114. Choi, Soo Young; White, John M.; Wang, Qunhua; Hou, Li; Kim, Ki Woon; Kurita, Shinichi; Won, Tae Kyung; Anwar, Suhail; Park, Beom Soo; Tiner, Robin L., Plasma uniformity control by gas diffuser hole design.
  115. Raisanen, Petri; Marcus, Steven, Plasma-enhanced deposition process for forming a metal oxide thin film and related structures.
  116. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Plasma-free metal etch.
  117. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Polarity control for remote plasma.
  118. Choi, Tom; Ko, Jungmin; Kang, Sean, Poly directional etch by oxidation.
  119. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.
  120. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.
  121. Otsuki, Hayashi, Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film.
  122. Otsuki, Hayashi, Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film.
  123. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  124. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  125. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  126. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  127. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  128. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  129. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  130. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  131. Naik, Mehul; Ma, Paul F.; Nemani, Srinivas D., Protective via cap for improved interconnect performance.
  132. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry, Radial waveguide systems and methods for post-match control of microwaves.
  133. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  134. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  135. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  136. Chen, Zhijun; Zhang, Jingchun; Hsu, Ching-Mei; Park, Seung; Wang, Anchuan; Ingle, Nitin K., Radical-component oxide etch.
  137. Chen, Zhijun; Zhang, Jingchun; Hsu, Ching-Mei; Park, Seung; Wang, Anchuan; Ingle, Nitin K., Radical-component oxide etch.
  138. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Remotely-excited fluorine and water vapor etch.
  139. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  140. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  141. Yang, Dongqing; Zhu, Lala; Wang, Fei; Ingle, Nitin K., Saving ion-damaged spacers.
  142. Chen, Zhijun; Huang, Jiayin; Wang, Anchuan; Ingle, Nitin, Selective SiN lateral recess.
  143. Wang, Xikun; Lei, Jianxin; Ingle, Nitin; Shaviv, Roey, Selective cobalt removal for bottom up gapfill.
  144. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
  145. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
  146. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
  147. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
  148. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
  149. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
  150. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
  151. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
  152. Citla, Bhargav; Ying, Chentsau; Nemani, Srinivas; Babayan, Viachslav; Stowell, Michael, Selective etch using material modification and RF pulsing.
  153. Wang, Xikun; Ingle, Nitin, Selective in situ cobalt residue removal.
  154. Hoinkis, Mark; Miyazoe, Hiroyuki; Joseph, Eric, Selective sputtering for pattern transfer.
  155. Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and nitrogen.
  156. Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and oxygen.
  157. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.
  158. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.
  159. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.
  160. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.
  161. Wang, Xikun; Ingle, Nitin, Selective tungsten removal.
  162. Pandit, Mandar B.; Wang, Anchuan; Ingle, Nitin K., Self-aligned process.
  163. Arnepalli, Ranga Rao; Goradia, Prerna Sonthalia; Visser, Robert Jan; Ingle, Nitin; Korolik, Mikhail; Biswas, Jayeeta; Lodha, Saurabh, Self-limiting atomic thermal etching systems and methods.
  164. Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Semiconductor processing systems having multiple plasma configurations.
  165. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
  166. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
  167. Nguyen, Andrew; Ramaswamy, Kartik; Nemani, Srinivas; Howard, Bradley; Vishwanath, Yogananda Sarode, Semiconductor system assemblies and methods of operation.
  168. Huston, Joel M., Showerhead assembly.
  169. Lindfors, Sven; Soininen, Pekka Juha, Showerhead assembly and ALD methods.
  170. Shah, Kartik; Prasad, Chaitanya A.; Bautista, Kevin Joseph; Tobin, Jeffrey; Kelkar, Umesh M.; Hawrylchak, Lara, Showerhead design.
  171. Carducci, James D.; Regelman, Olga, Showerhead insulator and etch chamber liner.
  172. White, John M.; Sterling, William Norman, Showerhead mounting to accommodate thermal expansion.
  173. Choi,Young Bae; Lee,Moon Sook; Bae,Byoung Jae, Showerheads for providing a gas to a substrate and apparatus.
  174. Ko, Jungmin; Choi, Tom; Ingle, Nitin; Kim, Kwang-Soo; Wou, Theodore, SiN spacer profile patterning.
  175. Park, Seung; Wang, Anchuan, Silicon etch process with tunable selectivity to SiO2 and other materials.
  176. Korolik, Mikhail; Ingle, Nitin K.; Wang, Anchuan; Xu, Jingjing, Silicon germanium processing.
  177. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Silicon oxide selective removal.
  178. Huang, Jiayin; Chen, Zhijun; Wang, Anchuan; Ingle, Nitin, Silicon pretreatment for nitride removal.
  179. Li, Zihui; Hsu, Ching-Mei; Zhang, Hanshen; Zhang, Jingchun, Silicon selective removal.
  180. Chen, Zhijun; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Silicon-carbon-nitride selective etch.
  181. Kim, Hun Sang; Choi, Jinhan; Koseki, Shinichi, Simplified litho-etch-litho-etch process.
  182. Luere, Olivier; Kang, Sean S.; Nemani, Srinivas D., Spacer formation.
  183. Keller, Ernst; Shang, Quanyuan, Suspended gas distribution manifold for plasma chamber.
  184. White,John M.; Keller,Ernst; Blonigan,Wendell T., Suspended gas distribution plate.
  185. Keller, Ernst, Suspension for showerhead in process chamber.
  186. Renken,Wayne Glenn, System and method for heating and cooling wafer at accelerated rates.
  187. Hong, Sung Jae, Temperature control method of chemical vapor deposition device.
  188. Meinhold, Henner W.; Doble, Dan M.; Lau, Stephen Yu-Hong; Wilson, Vince; Srinivasan, Easwar, Temperature controlled showerhead.
  189. Meinhold, Henner; Doble, Dan M.; Lau, Stephen; Wilson, Vince; Srinivasan, Easwar, Temperature controlled showerhead.
  190. Meinhold, Henner; Doble, Dan M.; Lau, Stephen; Wilson, Vince; Srinivasan, Easwar, Temperature controlled showerhead.
  191. Meinhold, Henner; Doble, Dan M.; Lau, Stephen; Wilson, Vince; Srinivasan, Easwar, Temperature controlled showerhead.
  192. Bartlett, Christopher M.; Li, Ming; Henri, Jon; Stowell, Marshall R.; Sabri, Mohammed, Temperature controlled showerhead for high temperature operations.
  193. Benjaminson, David; Lubomirsky, Dmitry, Thermal management systems and methods for wafer processing systems.
  194. Wang, Xikun; Pandit, Mandar; Wang, Anchuan; Ingle, Nitin K., Titanium nitride removal.
  195. Wang, Xikun; Xu, Lin; Wang, Anchuan; Ingle, Nitin K., Titanium oxide etch.
  196. Liu, Jie; Wang, Xikun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Tungsten oxide processing.
  197. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Tungsten separation.
  198. Balasubramanian, Ganesh; Rocha Alvarez, Juan Carlos; Cho, Tom K.; Raj, Daemian, Uniformity control for low flow process and chamber to chamber matching.
  199. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., V trench dry etch.
  200. Liu, Jie; Purayath, Vinod R.; Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Vertical gate separation.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로