초록

A method of reducing plasma-induced damage in a substrate, comprising providing a post-deposition ramp down of a plasma source power used in generating a plasma for substrate processing.

대표청구항 ▼

1. A method of plasma processing, comprising the steps of: (a) positioning a substrate in a chamber; (b) flowing one or more process gases into the chamber; (c) igniting a plasma from the one or more process gases by applying a plasma source power at a first power level; (d) depositing a mater

1. A method of plasma processing, comprising the steps of: (a) positioning a substrate in a chamber; (b) flowing one or more process gases into the chamber; (c) igniting a plasma from the one or more process gases by applying a plasma source power at a first power level; (d) depositing a material layer on the substrate; (e) ramping down the plasma source power below the first power level; (f) terminating at least one gas flow from the one or more process gases prior to terminating the plasma, wherein the at least one gas flow comprises a precursor gas for the deposited material, wherein the precursor gas is selected from the group of tetraethoxy-silane and tetramethyl cyclotetra-siloxane, wherein the deposited material is oxide, and wherein the ramping down of the plasma source power is performed concurrently with the terminating at least one gas flow from the one or more process gases; and (g) terminating the plasma. 2. The method of claim 1, wherein the one or more process gases further comprise oxygen and an inert gas. 3. A method of plasma processing, comprising the steps of: (a) positioning a substrate in a chamber; (b) flowing one or more process gases into the chamber; (c) igniting a plasma from the one or more process gases by applying a plasma source power at a first power level; (d) depositing a material layer on the substrate; (e) ramping down the plasma source power below the first power level; (f) terminating at least one gas flow from the one or more process gases prior to terminating the plasma, wherein the at least one gas flow comprises a precursor gas for the deposited material, wherein the precursor gas is selected from the group of tetraethoxy-silane and tetramethyl cyclotetra-siloxane, wherein the deposited material is oxide, and wherein the ramping down of the plasma source power is performed sequentially with the terminating at least one gas flow from the one or more process gases; and (g) terminating the plasma. 4. The method claim 3, wherein the one or more process gases further comprise oxygen and an inert gas. 5. A method of oxide deposition, comprising the steps of: (a) positioning a substrate in a chamber; (b) flowing a process gas mixture comprising tetraethoxy-silane, oxygen and helium, to the chamber; (c) forming a first plasma from the process gas mixture by applying a radio-frequency (RF) signal at a first power level; (d) depositing an oxide layer on the substrate by exposing the substrate to the first plasma; (e) ramping down the RF signal below the first power level; (f) terminating the flow of tetraethoxy-silane; and (g) reducing the RF signal to zero after the terminating the flow of tetraethoxy-silane. 6. The method of claim 5, wherein the ramping down of the RF signal comprises reducing the RF signal to one or more intermediate power levels, and wherein each of the one or more intermediate power levels is maintained for a time interval between about 0.1 and about 30 seconds. 7. The method of claim 5, wherein the ramping down of the RF signal comprises reducing the RF signal in a continuous manner.