초록 ▼

A method of fabricating a semiconductor device is disclosed. A wafer substrate is provided. A first silicon oxide layer is formed over the wafer substrate. A nitride layer is formed over the first silicon oxide layer using a low temperature deposition process. A second silicon oxide layer is formed

A method of fabricating a semiconductor device is disclosed. A wafer substrate is provided. A first silicon oxide layer is formed over the wafer substrate. A nitride layer is formed over the first silicon oxide layer using a low temperature deposition process. A second silicon oxide layer is formed over the nitride layer. The low temperature process can form a nitride layer for an oxide-nitride-oxide (ONO) dielectric structure at about a temperature of 700° C. By such a process, an ONO dielectric structure can be formed using a low temperature deposition process, which can reduce the thickness of the ONO dielectric structure.

대표청구항 ▼

1. A method of manufacturing a semiconductor device, comprising:providing a wafer substrate;forming a first silicon oxide layer over the wafer substrate;forming a nitride layer over the first silicon oxide layer using a low temperature deposition process; andforming a second silicon oxide layer over

1. A method of manufacturing a semiconductor device, comprising:providing a wafer substrate;forming a first silicon oxide layer over the wafer substrate;forming a nitride layer over the first silicon oxide layer using a low temperature deposition process; andforming a second silicon oxide layer over the nitride layer. 2. The method of claim 1, further comprising forming a floating gate poly over the wafer substrate, and wherein the first silicon oxide layer is formed over the floating gate poly. 3. The method of claim 1, wherein forming the nitride layer includes depositing the nitride layer at a temperature of about 700° C. 4. The method of claim 1, wherein forming the nitride layer includes depositing the nitride layer under a pressure of about 275 Torrs. 5. The method of claim 1, wherein forming the first silicon oxide layer includes reacting silane with nitrous oxide under a pressure of about 200 Torrs. 6. The method of claim 1, wherein the first silicon oxide layer has a thickness of about 43 Angstroms. 7. The method of claim 1, wherein the nitride layer has a thickness of about 62 Angstroms. 8. The method of claim 1, wherein the second silicon oxide layer has a thickness of about 59 Angstroms. 9. A semiconductor device, comprising:a substrate;a first oxide layer formed over the substrate;a nitride layer formed on the first oxide layer, wherein the nitride layer is formed using a low temperature deposition process; anda second oxide layer formed over the nitride layer. 10. The device of claim 9, further comprising a floating gate poly formed over the substrate, and wherein the first oxide layer is formed over the floating gate poly. 11. The device of claim 9, wherein the nitride layer is formed at a temperature of about 700° C. 12. A semiconductor device, comprising:a substrate; anda floating-gate electrode formed over the substrate, the floating-gate electrode includes:a first oxide layer formed over the substrate,a nitride layer formed on the first oxide layer, wherein the nitride layer is formed using a low temperature deposition process, anda second oxide layer formed over the nitride layer. 13. The device of claim 12, wherein the floating-gate electrode further comprises a floating gate poly formed over the substrate, and wherein the first oxide layer is formed over the floating gate poly. 14. The device of claim 12, wherein the nitride layer is formed at a temperature of about 700° C.