초록 ▼

A method for producing an ultra-thin semiconductor chip and an ultra-thin back-illuminated solid-state image pickup device utilizing a semiconductor layer formed on a support substrate via an insulating layer to improve separation performance of a semiconductor layer from a support substrate and the

A method for producing an ultra-thin semiconductor chip and an ultra-thin back-illuminated solid-state image pickup device utilizing a semiconductor layer formed on a support substrate via an insulating layer to improve separation performance of a semiconductor layer from a support substrate and thereby improve the productivity and quality. The method uses two porous peeling layers on opposite sides of a substrate to produce an ultra-thin substrate.

대표청구항 ▼

The invention claimed is: 1. A method of production of an ultra-thin semiconductor device comprising the steps of: forming a base comprised of a support substrate on which a second porous semiconductor peeling layer, a second single crystalline semiconductor layer, an insulating layer, and a first

The invention claimed is: 1. A method of production of an ultra-thin semiconductor device comprising the steps of: forming a base comprised of a support substrate on which a second porous semiconductor peeling layer, a second single crystalline semiconductor layer, an insulating layer, and a first single crystalline semiconductor layer are stacked and forming a semiconductor device unit and projecting connection electrodes to be connected to the semiconductor device unit at said first single crystalline semiconductor layer; forming a score along a separation line for separation to an individual semiconductor device from said first single crystalline semiconductor layer side until at least said second porous semiconductor peeling layer of said base is reached; forming a resin protective film filling an interior of said score and covering the surface of said first single crystalline semiconductor layer; exposing said projecting connection electrodes at the surface by polishing one surface of the resin protective film; covering the resin protective film surface and said projecting connection electrode surfaces by a conductive protective tape free from residual; peeling off said support substrate using said second porous semiconductor peeling layer as an interface; and dicing from said second crystalline semiconductor layer side along said resin protective film filled in said score to separate an individual semiconductor device. 2. A method of production of an ultra-thin semiconductor device as set forth in claim 1, further comprising, in the step of peeling off said support substrate at said second porous semiconductor peeling layer as an interface, spraying a fluid from a lateral direction to said second porous semiconductor peeling layer while rotating to peel off said support substrate. 3. A method of production of an ultra-thin semiconductor device as set forth in claim 1, further comprising, in the step of peeling off said support substrate at said second porous semiconductor peeling layer as an interface, emitting a laser beam from a lateral direction to said second porous semiconductor peeling layer while rotating to peel off said support substrate. 4. A method of production of an ultra-thin semiconductor device as set forth in claim 1, wherein said step of forming a base comprises the steps of: forming a first porous semiconductor peeling layer at a seed substrate; forming said first single crystalline semiconductor layer on said first porous semiconductor peeling layer; forming said second porous semiconductor peeling layer on said support substrate; forming said second single crystalline semiconductor layer on said second porous semiconductor peeling layer; forming said insulating layer on at least one of said first single crystalline semiconductor layer and said second single crystalline semiconductor layer; bonding said seed substrate and said support substrate from said first single crystalline semiconductor layer and said second single crystalline semiconductor layer sides in the state with said insulating layer interposed; peeling off said seed substrate at said first porous semiconductor peeling layer as an interface; and etching the surface of said first single crystalline semiconductor layer by hydrogen annealing. 5. A method of production of an ultra-thin semiconductor device as set forth in claim 4, further comprising, in the step of peeling off said seed substrate at said first porous semiconductor peeling layer as an interface, spraying a fluid from a lateral direction to said first porous semiconductor peeling layer while rotating to peel off said seed substrate. 6. A method of production of an ultra-thin semiconductor device as set forth in claim 4, further comprising, in the step of peeling off said seed substrate at said first porous semiconductor peeling layer as an interface, emitting a laser beam from a lateral direction to said first porous semiconductor peeling layer while rotating to peel off said seed substrate. 7. A method of production of an ultra-thin semiconductor device as set forth in claim 4, further comprising, in the step of forming said insulating layer, forming said insulating layer including at least one type of film among a silicon oxide film, a silicon nitride film, a multilayer film of a silicon oxide film and silicon nitride film, a multilayer film of a silicon oxide film, a silicon nitride film, and a silicon oxide film, a silicon oxynitride film, and an aluminum oxide film. 8. A method of production of an ultra-thin semiconductor device as set forth in claim 4, further comprising, in the steps of forming said first porous semiconductor peeling layer and said second porous semiconductor peeling layer, forming said layer by forming an impurity doped layer comprised of a single crystalline semiconductor layer including an impurity and converting it to a porous semiconductor by anodic conversion. 9. A method of production of an ultra-thin semiconductor device as set forth in claim 4, further comprising, in the steps of forming said first porous semiconductor peeling layer and said second porous semiconductor peeling layer, forming said layers by making a porosity and thickness of said first porous semiconductor peeling layer larger than those of said second porous semiconductor peeling layer so as to enable peeling off at said first porous semiconductor peeling layer as an interface compared with said second porous semiconductor peeling layer when peeling off said seed substrate. 10. A method of production of an ultra-thin semiconductor device as set forth in claim 4, further comprising, in the steps of forming said first porous semiconductor peeling layer and said second porous semiconductor peeling layer, forming the layer by at least two layers of different porosities. 11. A method of production of an ultra-thin semiconductor device as set forth in claim 1, further comprising, in the step of separation to an individual semiconductor device, dicing by a width narrower than a width of said score and at the substantial center of said score so that part of said resin protective film covers the side surfaces of said first single crystalline semiconductor layer, said insulating layer, and said second single crystalline semiconductor layer separated by the dicing. 12. A method of production of an ultra-thin back-illuminated solid-state image pickup device comprising the steps of: forming a base comprised of a support substrate on which a second porous semiconductor peeling layer, a second single crystalline semiconductor layer, an insulating layer, and a first single crystalline semiconductor layer are stacked and forming a solid-state image pickup sensor unit and projecting connection electrodes to be connected to the solid-state image pickup sensor unit at said first single crystalline semiconductor layer; forming a score along a separation line for separation to an individual solid-state image pickup device from said first single crystalline semiconductor layer side until at least said second porous semiconductor peeling layer of said base is reached; forming a resin protective film filling an interior of said score and covering the surface of said first single crystalline semiconductor layer; exposing said projecting connection electrodes at the surface by polishing one surface of the resin protective film; covering the resin protective film surface and aid projecting connection electrode surfaces by a conductive protective tape free from residual; peeling off said support substrate using said second porous semiconductor peeling layer as an interface; and dicing from said second crystalline semiconductor layer side along said resin protective film filled in said score to separate an individual solid-state image pickup device. 13. A method of production of an ultra-thin back-illuminated solid-state image pickup device as set forth in claim 12, further comprising, in the step of peeling off said support substrate at said second porous semiconductor peeling layer as an interface, spraying a fluid from a lateral direction to said second porous semiconductor peeling layer while rotating to peel off said support substrate. 14. A method of production of an ultra-thin back-illuminated solid-state image pickup device as set forth in claim 12, further comprising, in the step of peeling off said support substrate at said second porous semiconductor peeling layer as an interface, emitting a laser beam from a lateral direction to said second porous semiconductor peeling layer while rotating to peel off said support substrate. 15. A method of production of an ultra-thin back-illuminated solid-state image pickup device as set forth in claim 12, wherein said step of forming a base comprises the steps of: forming a first porous semiconductor peeling layer at a seed substrate; forming said first single crystalline semiconductor layer on said first porous semiconductor peeling layer; forming said second porous semiconductor peeling layer on said support substrate; forming said second single crystalline semiconductor layer on said second porous semiconductor peeling layer; forming said insulating layer on at least one of said first single crystalline semiconductor layer and said second single crystalline semiconductor layer; bonding said seed substrate and said support substrate from said first single crystalline semiconductor layer and said second single crystalline semiconductor layer sides in the state with said insulating layer interposed; peeling off said seed substrate at said first porous semiconductor peeling layer as an interface; and etching the surface of said first single crystalline semiconductor layer by hydrogen annealing. 16. A method of production of an ultra-thin back-illuminated solid-state image pickup device as set forth in claim 15, further comprising, in the step of peeling off said seed substrate at said first porous semiconductor peeling layer as an interface, spraying a fluid from a lateral direction to said first porous semiconductor peeling layer while rotating to peel off said seed substrate. 17. A method of production of an ultra-thin back-illuminated solid-state image pickup device as set forth in claim 15, further comprising, in the step of peeling off said seed substrate at said first porous semiconductor peeling layer as an interface, emitting a laser beam from a lateral direction to said first porous semiconductor peeling layer while rotating to peel off said seed substrate. 18. A method of production of an ultra-thin back-illuminated solid-state image pickup device as set forth in claim 15, further comprising, in the step of forming said insulating layer, forming said insulating layer including at least one type of film among a silicon oxide film, a silicon nitride film, a multilayer film of a silicon oxide film and silicon nitride film, a multilayer film of a silicon oxide film, a silicon nitride film, and a silicon oxide film, a silicon oxynitride film, and an aluminum oxide film. 19. A method of production of an ultra-thin back-illuminated solid-state image pickup device as set forth in claim 15, further comprising, in the steps of forming said first porous semiconductor peeling layer and said second porous semiconductor peeling layer, forming said layer by forming an impurity doped layer comprised of a single crystalline semiconductor layer including an impurity and converting it to a porous semiconductor by anodic conversion. 20. A method of production of an ultra-thin back-illuminated solid-state image pickup device as set forth in claim 15, further comprising, in the steps of forming said first porous semiconductor peeling layer and said second porous semiconductor peeling layer, forming said layers by making a porosity and thickness of said first porous semiconductor peeling layer larger than those of said second porous semiconductor peeling layer so as to enable peeling off at said first porous semiconductor peeling layer as an interface compared with said second porous semiconductor peeling layer when peeling off said seed substrate. 21. A method of production of an ultra-thin back-illuminated solid-state image pickup device as set forth in claim 15, further comprising, in the steps of forming said first porous semiconductor peeling layer and said second porous semiconductor peeling layer, forming the layer by at least two layers of different porosities. 22. A method of production of an ultra-thin back-illuminated solid-state image pickup device as set forth in claim 12, further comprising, in the step of separation to an individual solid-state image pickup device, dicing by a width narrower than a width of said score and at the substantial center of said score so that part of said resin protective film covers the side surfaces of said first single crystalline semiconductor layer, said insulating layer, and said second single crystalline semiconductor layer separated by the dicing. 23. A method of production of an ultra-thin back-illuminated solid-state image pickup device as set forth in claim 12, further comprising, after the step of separation to an individual solid-state image pickup device, the steps of: removing said second single crystalline semiconductor layer to form said resin protective layer projecting up from the surface of said insulating layer by exactly an amount corresponding to the thickness of said second single crystalline semiconductor layer and covering the side surfaces of said solid-state image pickup device and affixing a transparent substrate to said solid-state image pickup device from said insulating layer side using the amount of projection of said resin protective layer as an air gap. 24. A method of production of an ultra-thin back-illuminated solid-state image pickup device as set forth in claim 12, further comprising, after the step of peeling off said support substrate at said second porous semiconductor peeling layer as an interface and before the step of separation to an individual solid-state image pickup device, a step of affixing a color filter substrate from said insulating film side of said solid-state image pickup device and further comprising, in said step of separation to an individual solid-state image pickup device, dicing from said color filter substrate side along said resin protective film filling said score to separate said individual solid-state image pickup device. 25. A method of production of an ultra-thin back-illuminated solid-state image pickup device as set forth in claim 24, further comprising, in said step of forming a resin protective film, forming a transparent resin protective film and further comprising, in said step of affixing said color filter substrate, positioning by monitoring an alignment mark of said first single crystalline semiconductor layer through said resin protective film and an alignment mark of said color filter substrate, then affixing said color filter substrate. 26. A method of production of an ultra-thin back-illuminated solid-state image pickup device as set forth in claim 12, further comprising, after said step of peeling off said support substrate at said second porous semiconductor peeling layer as an interface and before said step of separation to an individual solid-state image pickup device, the steps of removing said second single crystalline semiconductor layer to expose said insulating layer, forming an on-chip color filter including a pigment on said exposed insulating layer, and forming an on-chip microlens on said on-chip color filter and further comprising, before or after said step of separation into an individual solid-state image pickup device, the step of affixing a transparent substrate on said solid-state image pickup sensor unit from said on-chip microlens side with a predetermined air gap determined by a diameter of a spacer in a sealing agent.