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The invention includes memory arrays, and methods which can be utilized for forming memory arrays. A patterned etch stop can be used during memory array fabrication, with the etch stop covering storage node contact locations while leaving openings to bitline contact locations. An insulative material

The invention includes memory arrays, and methods which can be utilized for forming memory arrays. A patterned etch stop can be used during memory array fabrication, with the etch stop covering storage node contact locations while leaving openings to bitline contact locations. An insulative material can be formed over the etch stop and over the bitline contact locations, and trenches can be formed through the insulative material. Conductive material can be provided within the trenches to form bitline interconnect lines which are in electrical contact with the bitline contact locations, and which are electrically isolated from the storage node contact locations by the etch stop. In subsequent processing, openings can be formed through the etch stop to the storage node contact locations. Memory storage devices can then be formed within the openings and in electrical contact with the storage node contact locations.

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The invention claimed is: 1. A DRAM array, comprising: a semiconductor substrate; a plurality of transistor constructions supported by the substrate; each transistor construction including a transistor gate and a pair of source/drain regions, each pair of source/drain regions including a bitline co

The invention claimed is: 1. A DRAM array, comprising: a semiconductor substrate; a plurality of transistor constructions supported by the substrate; each transistor construction including a transistor gate and a pair of source/drain regions, each pair of source/drain regions including a bitline contact source/drain region and a storage node contact source/drain region; a plurality of bitline interconnect stacks over the substrate and electrically connecting to the bitline contact source/drain regions, the bitline interconnect stacks being separated from the storage node contact source/drain regions by at least an electrically insulative layer comprising one or more of aluminum oxide, silicon nitride, silicon oxynitride, and undoped silicon dioxide; the bitline interconnect stacks each comprising: an electrically conductive bitline interconnect line having a first lateral width; the electrically conductive bitline interconnect line having a top surface, a bottom surface, and sidewall surfaces extending between the top and bottom surfaces; an electrically insulative cap over the electrically conductive bitline interconnect line, the electrically insulative cap having a second lateral width which is greater than the first lateral width; and a pair of electrically insulative sidewall spacers covering the sidewalls of the electrically conductive bitline interconnect line; and a plurality of capacitor constructions having storage nodes extending through the electrically insulative layer and in electrical contact with the storage node contact source/drain regions. 2. The DRAM array of claim 1 wherein the bitline interconnect stacks are over the transistor gates. 3. The DRAM array of claim 1 wherein the electrically insulative layer consists essentially of aluminum oxide. 4. The DRAM array of claim 1 wherein the electrically insulative layer consists of aluminum oxide. 5. The DRAM array of claim 1 wherein the electrically insulative layer consists essentially of silicon nitride. 6. The DRAM array of claim 1 wherein the electrically insulative layer consists of silicon nitride. 7. The DRAM array of claim 1 wherein the electrically insulative layer consists essentially of silicon oxynitride. 8. The DRAM array of claim 1 wherein the electrically insulative layer consists of silicon oxynitride. 9. The DRAM array of claim 1 wherein the electrically insulative layer consists of undoped silicon dioxide. 10. The DRAM array of claim 1 wherein the electrically insulative cap consists essentially of silicon nitride. 11. The DRAM array of claim 1 wherein the electrically insulative cap consists of silicon nitride. 12. The DRAM array of claim 11 wherein the electrically insulative sidewall spacers consist of doped silicon oxide. 13. The DRAM array of claim 1 wherein the transistor gates are comprised by wordline stacks which each contain an electrically insulative material over one or more electrically conductive materials; and wherein the electrically insulative layer physically contacts the electrically insulative material of at least some of the wordline stacks. 14. The DRAM array of claim 13 wherein the wordline stacks have paired opposing sidewalls and further comprising second electrically insulative sidewall spacers extending along the sidewalls of the wordline stacks; the electrically insulative layer being formed to physically contact at least some of the second electrically insulative sidewall spacers. 15. The DRAM array of claim 1 wherein the semiconductor substrate comprises a semiconductive material, wherein the transistor gates are formed over the semiconductive material of the semiconductor substrate, and wherein the transistor constructions comprise source/drain regions extending within the semiconductive material; the construction further comprising electrically conductive pedestals over and in electrical connection with the source/drain regions, wherein the bitline interconnect stacks physically contact uppermost surfaces of some of the electrically conductive pedestals; and wherein the storage nodes of the capacitor constructions physically contact uppermost surfaces of some of the electrically conductive pedestals. 16. The DRAM array of claim 1 wherein the electrically conductive bitline interconnect line comprises a stack of at least two electrically conductive layers having different chemical compositions than one another. 17. The DRAM array of claim 1 wherein the electrically conductive bitline interconnect line comprises a stack of at least three electrically conductive layers having different chemical compositions than one another. 18. The DRAM array of claim 1 wherein the electrically conductive bitline interconnect line comprises a stack of copper and tantalum nitride. 19. The DRAM array of claim 1 wherein the electrically conductive bitline interconnect line comprises a stack of a first layer, second layer and third layer; the first layer comprising titanium nitride or tungsten nitride, the second layer comprising Ti, and the third layer comprising tungsten. 20. The DRAM array of claim 19 wherein the first layer consists essentially of titanium nitride or tungsten nitride, the second layer consists essentially of Ti, and the third layer consists essentially of tungsten. 21. The DRAM array of claim 19 wherein the first layer consists of titanium nitride or tungsten nitride, the second layer consists of Ti, and the third layer consists of tungsten. 22. An electronic system comprising the DRAM array of claim 1.