[미국특허]
CMP composition with a polymer additive for polishing noble metals
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C03C-015/00
C03C-025/68
출원번호
UP-0963108
(2004-10-12)
등록번호
US-7563383
(2009-07-29)
발명자
/ 주소
de Rege Thesauro, Francesco
Bayer, Benjamin P.
출원인 / 주소
Cabot Mircroelectronics Corporation
대리인 / 주소
Omholt, Thomas
인용정보
피인용 횟수 :
4인용 특허 :
23
초록▼
The invention provides a method of polishing a substrate comprising contacting a substrate comprising a noble metal on a surface of the substrate with a chemical-mechanical polishing system comprising (a) a polishing component selected from the group consisting of an abrasive, a polishing pad, and a
The invention provides a method of polishing a substrate comprising contacting a substrate comprising a noble metal on a surface of the substrate with a chemical-mechanical polishing system comprising (a) a polishing component selected from the group consisting of an abrasive, a polishing pad, and a combination thereof, (b) an oxidizing agent, (c) an ethylene-oxide containing polymer, and (d) a liquid carrier, and abrading at least a portion of the noble metal with the chemical-mechanical polishing system to polish the substrate.
대표청구항▼
What is claimed is: 1. A method of polishing a substrate comprising: (i) contacting a substrate comprising a noble metal and silicon oxide on a surface of the substrate, wherein the noble metal is selected from the group consisting of ruthenium, iridium, platinum, palladium, osmium, rhenium, silver
What is claimed is: 1. A method of polishing a substrate comprising: (i) contacting a substrate comprising a noble metal and silicon oxide on a surface of the substrate, wherein the noble metal is selected from the group consisting of ruthenium, iridium, platinum, palladium, osmium, rhenium, silver, gold, nitrides thereof, oxides thereof, alloys thereof, and combinations thereof, with a chemical-mechanical polishing system comprising: (a) a polishing component selected from the group consisting of an abrasive, a polishing pad, and a combination thereof, (b) an oxidizing agent selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, hypoiodites, periodates, monoperoxy sulfate, organo-halo-oxy compounds, rare earth salts, and combinations thereof, (c) an ethylene-oxide containing polymer having the structure R(CH2CH2O)nR', wherein R is selected from OH, OR", and R", and wherein R' is selected from H or R", wherein R" is H or lower alkyl, and wherein n is an integer from about 150 to about 250, and wherein the ethylene-oxide containing polymer suppresses the removal rate of the silicon oxide, and (d) a liquid carrier, and (ii) abrading at least a portion of the noble metal with the chemical-mechanical polishing system to polish the substrate. 2. The method of claim 1, wherein the chemical-mechanical polishing system has a pH of about 4 or less. 3. The method of claim 2, wherein the chemical-mechanical polishing system has a pH of about 1 to about 4. 4. The method of claim 1, wherein the chemical-mechanical polishing system comprises about 0.1 wt. % to about 10 wt. % of the oxidizing agent based on the weight of the liquid carrier and any components dissolved or suspended therein. 5. The method of claim 1, wherein the oxidizing agent is a bromate. 6. The method of claim 1, wherein the oxidizing agent is potassium hydrogen peroxymonosulfate sulfate. 7. The method of claim 1, wherein the ethylene-oxide containing polymer is a polyethylene glycol. 8. The method of claim 7, wherein the polyethylene glycol has a molecular weight of about 7500 to about 10000 Daltons. 9. The method of claim 1, wherein the ethylene-oxide containing polymer is a dialkylsiloxane-ethylene oxide block copolymer. 10. The method of claim 1, wherein the chemical-mechanical polishing system comprises an abrasive suspended in a liquid carrier, and the abrasive is selected from the group consisting of alumina, silica, ceria, zirconia, titania, germania, diamond, and combinations thereof. 11. The method of claim 10, where the abrasive comprises silica doped with alumina. 12. The method of claim 1, wherein the substrate comprises silicon oxide. 13. The method of claim 1, wherein the noble metal is ruthenium. 14. The method of claim 1, wherein the liquid carrier comprises water. 15. The method of claim 1, wherein the chemical-mechanical polishing system further comprises an abrasive that is affixed to a polishing pad. 16. The method of claim 1, wherein the chemical-mechanical polishing system further comprises a complexing agent. 17. The method of claim 16, wherein the complexing agent is selected from the group consisting of ethylenediaminetetraacetic acid, nitrogen-containing crown ethers, citric acid, chloride ligands, bromide ligands, cyanide ligands, and phosphine ligands. 18. The method of claim 1, wherein the chemical-mechanical polishing system further comprises a pH buffering agent.
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이 특허에 인용된 특허 (23)
Wang, Yuchun; Bajaj, Rajeev; Redeker, Fred C., Additives to CMP slurry to polish dielectric films.
Neville Matthew (Champaign IL) Fluck David J. (Pesotum IL) Hung Cheng-Hung (Champaign IL) Lucarelli Michael A. (Mattoon IL) Scherber Debra L. (Orangevale CA), Chemical mechanical polishing slurry for metal layers.
Li Yuzhuo ; Cerutti David Bruce ; Buckley ; Jr. Donald Joseph ; Tyre ; Jr. Earl Royce ; Keleher Jason J. ; Uriarte Richard J. ; Horkay Ferenc, Diamond slurry for chemical-mechanical planarization of semiconductor wafers.
Lustig Naftali E. (Croton-on-Hudson NY) Saenger Katherine L. (Ossining NY) Tong Ho-Ming (Yorktown Heights NY), In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing.
Sandhu Gurtej S. (Boise) Doan Trung T. (Boise ID), Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image o.
Bruxvoort Wesley J. ; Culler Scott R. ; Ho Kwok-Lun ; Kaisaki David A. ; Kessel Carl R. ; Klun Thomas P. ; Kranz Heather K. ; Messner Robert P. ; Webb Richard J. ; Williams Julia P., Method of modifying an exposed surface of a semiconductor wafer.
Katakabe Ichiro (Kanagawa-ken JPX) Miyashita Naoto (Kanagawa-ken JPX) Akiyama Tatsuo (Tokyo JPX), Polishing method and apparatus for detecting a polishing end point of a semiconductor wafer.
Cook Lee M. (Steelville PA) Roberts John V. H. (Newark DE) Jenkins Charles W. (Newark DE) Pillai Raj R. (Newark DE), Polishing pads and methods for their use.
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