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An MIM capacitor structure having a metal structure formed thereover is provided. A dielectric layer is disposed over the metal structure and a top layer is disposed over the dielectric layer. A capacitance trench is formed through the top layer and into the dielectric layer. Respective bottom elect

An MIM capacitor structure having a metal structure formed thereover is provided. A dielectric layer is disposed over the metal structure and a top layer is disposed over the dielectric layer. A capacitance trench is formed through the top layer and into the dielectric layer. Respective bottom electrodes are formed over the opposing side walls of the capacitance trench. A capacitance dielectric layer is disposed over the respective bottom electrodes, the bottom of the capacitance trench and the remaining top layer. Respective opposing initial via openings are formed adjacent the capacitance trench. Respective trench openings are formed above, continuous and contiguous with the lower portions of the respective opposing initial via openings and exposing portions of the underlying metal structure to form respective opposing dual damascene openings. Planarized metal portions disposed within the dual damascene openings and the capacitance trench form a top electrode.

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What is claimed is: 1. A vertical MIM capacitor, comprising: a bottom structure having a metal structure formed thereover; a patterned dielectric layer over the metal structure; a metal-insulator-metal structure within the patterned dielectric layer and including metal portions along each of first

What is claimed is: 1. A vertical MIM capacitor, comprising: a bottom structure having a metal structure formed thereover; a patterned dielectric layer over the metal structure; a metal-insulator-metal structure within the patterned dielectric layer and including metal portions along each of first and second opposing outer sides of an upright U shaped section of the patterned dielectric layer; a first planarized metal portion adjacent the first opposing outer side; the first planarized metal portion being in electrical connection with the metal structure; a second planarized metal portion adjacent the second outer opposing side; an inter-metal dielectric layer over the metal-insulator-metal structure and the first and second planarized metal portions; and a contact within the inter-metal dielectric layer in electrical contact with the second planarized metal portion. 2. The structure of claim 1, wherein the bottom structure is a silicon substrate, a germanium substrate, a semiconductor wafer or a semiconductor substrate. 3. The structure of claim 1, wherein the metal structure is comprised of copper, aluminum or gold; the patterned dielectric layer is comprised of an oxide material having a dielectric constant of less than about 3.0, silicon oxide or FSG; and the planarized metal portions are comprised of copper, aluminum or gold. 4. The structure of claim 1, wherein the metal structure is comprised of copper; the dielectric layer is comprised of an oxide material having a dielectric constant of less than about 3.0; and the planarized metal portions are comprised of copper. 5. The structure of claim 1, wherein the metal structure has a thickness of from about 1000 to 9000 Å; and the patterned dielectric layer has a thickness of from about 2000 to 12,000 Å. 6. The structure of claim 1, wherein the metal structure has a thickness of from about 2000 to 8000 Å; and the dielectric layer has a thickness of from about 7000 to 9000 Å. 7. The structure of claim 1, further comprising a pair of respective bottom electrodes interposed between the upright U shaped section and the first and second planarized metal portions. 8. The structure of claim 1, including a pair of respective bottom electrodes interposed between the upright U shaped section and the first and second planarized metal portions; the pair of respective bottom electrodes each being comprised of TaN or TiN and having a thickness of from about 100 to 500 Å. 9. The structure of claim 1, including a pair of respective bottom electrodes interposed between the upright U shaped section and the first and second planarized metal portions; the pair of respective bottom electrodes each being comprised of TaN and TiN and having a thickness of from about 200 to 400 Å. 10. A vertical MIM capacitor, comprising: a bottom structure having a metal structure formed thereover; a patterned dielectric layer over the metal structure; a metal-insulator-metal structure within the patterned dielectric layer; the metal-insulator-metal structure having a first and second opposing sides; a first planarized metal portion bordering the metal-insulator-metal structure on the first opposing side; the first planarized metal portion being in electrical connection with the metal structure; a second planarized metal portion bordering the metal-insulator-metal structure on the second opposing side; an inter-metal dielectric layer over the metal-insulator-metal structure and the first and second planarized metal portion; a contact within the inter-metal dielectric layer in electrical contact with the second planarized metal portion; and a pair of respective bottom electrodes interposed between the metal-insulator-metal structure and the first and second planarized metal portions. 11. The structure of claim 10, wherein the metal structure is comprised of copper, aluminum or gold; the patterned dielectric layer is comprised of an oxide material having a dielectric constant of less than about 3.0, silicon oxide or FSG; and the planarized metal portions are comprised of copper, aluminum or gold. 12. The structure of claim 10, wherein the bottom structure is a silicon substrate, a germanium substrate, a semiconductor wafer or a semiconductor substrate. 13. A vertical MIM capacitor, comprising: a bottom structure having a metal structure formed thereover; a patterned dielectric layer over the metal structure; a metal-insulator-metal structure within the patterned dielectric layer, the metal-insulator-metal structure having first and second opposing sides; a first planarized metal portion adjacent bordering the metal-insulator-metal structure on the first opposing side; the first planarized metal portion being in electrical connection with the metal structure; a second planarized metal portion bordering the metal-insulator-metal structure on the second opposing side; an inter-metal dielectric layer over the metal-insulator-metal structure and the first and second planarized metal portion; a contact within the inter-metal dielectric layer in electrical contact with the second planarized metal portion; and a pair of respective bottom electrodes interposed between the metal-insulator-metal structure and the first and second planarized metal portions; the pair of respective bottom electrodes each being comprised of TaN or TiN and having a thickness of from about 100 to 500 Å. 14. The structure of claim 13, wherein the metal-insulator-metal structure includes the first and second opposing sides being first and second opposing outer sides of an upright U shaped section of the patterned dielectric layer, the first planarized metal portion is bordering the first opposing outer side; and the second planarized metal portion is bordering the second opposing outer side. 15. The structure of claim 13, wherein the bottom structure is a silicon substrate, a germanium substrate, a semiconductor wafer or a semiconductor substrate. 16. The structure of claim 13, wherein the metal structure is comprised of copper, aluminum or gold; the patterned dielectric layer is comprised of an oxide material having a dielectric constant of less than about 3.0, silicon oxide or FSG; and the planarized metal portions are comprised of copper, aluminum or gold. 17. The structure of claim 13, wherein the metal structure is comprised of copper; the dielectric layer is comprised of an oxide material having a dielectric constant of less than about 3.0; and the planarized metal portions are comprised of copper. 18. The structure of claim 13, wherein the metal structure has a thickness of from about 1000 to 9000 Å; and the patterned dielectric layer has a thickness of from about 2000 to 12,000 Å. 19. The structure of claim 13, wherein the metal structure has a thickness of from about 2000 to 8000 Å; and the dielectric layer has a thickness of from about 7000 to 9000 Å. 20. The structure of claim 13, further comprising a pair of respective bottom electrodes interposed between the metal-insulator-metal structure and the first and second planarized metal portions.