초록 ▼

A method of filling a gap defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate and providing a flow of an oxidizing gas to the chamber. The method also includes varying over time a ratio of the (silicon

A method of filling a gap defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate and providing a flow of an oxidizing gas to the chamber. The method also includes varying over time a ratio of the (silicon-containing processing gas):(oxidizing gas). The method also includes exposing the substrate to nitrous oxide at a temperature less than about 900° C. to anneal the deposited film.

대표청구항 ▼

What is claimed is: 1. A method of forming a silicon oxide layer on a substrate, comprising: providing a flow of tetraethylorthosilicate (TEOS) to a chamber housing the substrate; providing a flow of ozone to the chamber; causing a reaction between the tetraethylorthosilicate and the ozone to form

What is claimed is: 1. A method of forming a silicon oxide layer on a substrate, comprising: providing a flow of tetraethylorthosilicate (TEOS) to a chamber housing the substrate; providing a flow of ozone to the chamber; causing a reaction between the tetraethylorthosilicate and the ozone to form a silicon oxide layer by, at least in part, varying over time a ratio of the (tetraethylorthosilicate):(ozone); and after causing the reaction heating the substrate in the presence of nitrous oxide, wherein the heating of the substrate in the presence of the nitrous oxide comprises heating the substrate to a temperature in a range from about 750° C. to about 1000° C. in a furnace while introducing steam into the furnace. 2. A method of forming a silicon oxide layer on a substrate, comprising: providing a flow of a tetraethylorthosilicate (TEOS) to a chamber housing the substrate; providing a flow of ozone to the chamber; causing a reaction between the tetraethylorthosilicate (TEOS) and the ozone to form a silicon oxide layer by, at least in part, varying over time a ratio of the (tetraethylorthosilicate):(ozone); and heating the substrate in the presence of nitrous oxide in a furnace to a temperature in the range from about 750° C. to about 1000° C., wherein steam is introduced into the furnace. 3. A method of forming isolation structures in a silicon substrate, comprising: etching trenches in the substrate; providing a flow of a silicon-containing processing gas to a chamber housing the substrate; providing a flow of an oxidizing gas to the chamber; causing a reaction between the silicon-containing processing gas and the oxidizing gas to form a silicon oxide layer by, at least in part, varying over time a ratio of the (silicon-containing processing gas):(oxidizing gas); heating the substrate in the presence of nitrous oxide; and thereafter, planarizing the layer, wherein causing the reaction between the silicon-containing processing gas and the oxidizing gas to form the silicon oxide layer comprises: depositing a first portion of the silicon oxide layer as a substantially conformal layer in the trenches by causing the reaction between the silicon-containing processing gas and the oxidizing gas, wherein depositing the substantially conformal layer comprises varying over time the ratio of the (silicon-containing processing gas):(oxidizing gas) and regulating the chamber to a pressure in a range from about 200 torr to about 760 torr throughout deposition of the substantially conformal layer; and thereafter, depositing a second portion of the silicon oxide layer as a bulk layer, wherein depositing the second portion of the silicon oxide layer comprises maintaining the ratio of the (silicon-containing processing gas): (oxidizing gas) substantially constant throughout deposition of the bulk layer and regulating the chamber to a pressure in a range from about 200 torr to about 760 torr throughout deposition of the bulk layer. 4. The method of claim 3, wherein planarizing the layer comprises subjecting the layer to chemical mechanical polishing. 5. The method of claim 3, wherein heating the substrate in the presence of nitrous oxide comprises exposing the substrate to nitrous oxide at a temperature less than about 900° C. to anneal the silicon oxide layer.