초록 ▼

A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source produces a plasma primarily of hydrogen radicals. The hydrogen pressure may be kept relatively low, fo

A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source produces a plasma primarily of hydrogen radicals. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter, removes hydrogen and other ions from the output of the remote plasma source and a supply tube from the remote plasma source includes a removable dielectric liner in combination with dielectric showerhead and manifold liner.

대표청구항 ▼

The invention claimed is: 1. A method of plasma processing a substrate containing a dielectric layer, comprising the steps of: disposing the substrate in a vacuum chamber to which is attached a remote plasma source; passing a reducing processing gas through the remote plasma sources; magnetically f

The invention claimed is: 1. A method of plasma processing a substrate containing a dielectric layer, comprising the steps of: disposing the substrate in a vacuum chamber to which is attached a remote plasma source; passing a reducing processing gas through the remote plasma sources; magnetically filtering out ions in the processing gas delivered from the output from the remote plasma source and thence passing the processing gas into the chamber, the processing gas comprising hydrogen and substantially no oxygen or water; and during the filtering and passing step, maintaining a pressure within the chamber such that a hydrogen partial pressure in the chamber is less than 150 milliTorr and greater than 10 milliTorr. 2. The method of claim 1, wherein the hydrogen partial pressure is no more than 120 milliTorr and greater than 20 milliTorr. 3. The method of claim 1, wherein the processing gas consists essentially of hydrogen. 4. The method of claim 1, wherein the processing gas consists essentially of hydrogen and helium. 5. The method of claim 1, wherein the dielectric layer comprises at least 20 at % carbon and has a porosity of at least 10%. 6. The method of claim 1, wherein the dielectric layer has a dielectric constant of no more than 2.5. 7. The method of claim 1, wherein the substrate has a hole etched therein and prior to the passing step sidewalls of the hole are covered by no more than etch residues. 8. A method of plasma processing a substrate, comprising the steps of: disposing the substrate in a vacuum chamber to which is attached a remote plasma source; passing a reducing processing gas through the remote plasma source and thence into the vacuum chamber, the processing gas comprising hydrogen and a noble gas and substantially no oxygen or water; and during the passing step, maintaining in the vacuum chamber a total pressure of between 300 and 500 milliTorr and a partial pressure of hydrogen of between 80 and 150 milliTorr. 9. The method of claim 8, further comprising magnetically filtering the processing gas as it passes from the remote plasma source to the vacuum chamber to remove ions from the processing gas. 10. The method of claim 8, wherein the substrate contains a hole etched in a dielectric layer of the substrate and prior to the passing step the sidewalls of the hole are covered by no more than residues of the etching. 11. The method of claim 8, wherein the noble gas is helium. 12. The method of claim 11, wherein the processing gas consists essentially of hydrogen and helium. 13. A method of plasma processing a substrate containing a porous dielectric layer with a hole etched therein, sidewalls of the hole being covered by no more than residues resulting from the etching, comprising the steps of: disposing the substrate in a vacuum chamber to which is attached a remote plasma source; passing a reducing processing gas through the remote plasma source and thence into the vacuum chamber, the processing gas comprising hydrogen and substantially no oxygen or water; and during the passing step, maintaining a pressure within the chamber such that a hydrogen partial pressure in the chamber is less than 120 milliTorr and greater than 20 milliTorr. 14. The method of claim 13, wherein the dielectric layer comprises at least 20 at % carbon and has a porosity of at least 10%. 15. The method of claim 13, further comprising magnetically filtering the processing gas as it passes from the remote plasma source into the vacuum chamber.