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Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
  • E03B-001/00
  • F17D-001/00
  • F15C-001/16
출원번호 UP-0925684 (2007-10-26)
등록번호 US-7794544 (2010-10-04)
발명자 / 주소
  • Nguyen, Son T.
  • Sangam, Kedarnath
  • Schwartz, Miriam
  • Choi, Kenric
  • Bhat, Sanjay
  • Narwankar, Pravin K.
  • Kher, Shreyas
  • Sharangapani, Rahul
  • Muthukrishnan, Shankar
  • Deaton, Paul
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Patterson & Sheridan, LLP
인용정보 피인용 횟수 : 25  인용 특허 : 258

초록

The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to re

대표청구항

The invention claimed is: 1. An atomic layer deposition process chamber, comprising: a gas delivery assembly, comprising: a covering member; an expanding channel disposed at a central portion of the covering member, the expanding channel comprising a bottom surface extending from the expanding chan

이 특허에 인용된 특허 (258)

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