초록 ▼

This disclosure is aimed at providing a method for producing an epitaxial wafer allowing uniform occurrence of oxygen precipitate in a substrate plane in the radial direction in a base plate and excelling in the crystal quality of an epi-layer.A method for the production of an epitaxial wafer, chara

This disclosure is aimed at providing a method for producing an epitaxial wafer allowing uniform occurrence of oxygen precipitate in a substrate plane in the radial direction in a base plate and excelling in the crystal quality of an epi-layer.A method for the production of an epitaxial wafer, characterized by using as a substrate a base plate of nitrogen- and carbon-added silicon single crystal having a nitrogen concentration of 5×1014 to 5×1015 atoms/cm3 and a carbon concentration of 1×1016 to 1×1018 atoms/cm3, having a crystal growth condition during the production of silicon single crystal in a range in which the whole surface of substrate becomes an OSF region, and being pulled at a cooling speed of not less than 4° C./minute between 1100 and 1000° C. during the growth of crystal, and depositing the silicon single crystal layer on the surface of the substrate by the epitaxial method.

대표청구항 ▼

We claim: 1. A method for production of an epitaxial wafer, the method comprising the steps of:growing a silicon single crystal by the Czochralski method with a nitrogen dopant andusing a V/G between an upper limit of 1.4 exp(6.2×10−16×nitrogen concentration)×(V/G)crit and a lower limit of 1.0 exp(−

We claim: 1. A method for production of an epitaxial wafer, the method comprising the steps of:growing a silicon single crystal by the Czochralski method with a nitrogen dopant andusing a V/G between an upper limit of 1.4 exp(6.2×10−16×nitrogen concentration)×(V/G)crit and a lower limit of 1.0 exp(−7.1×10−16×nitrogen concentration)×(V/G)crit, wherein V denotes the pulling speed, G denotes the average temperature gradient from the melting point to 1350° C. in the direction of the crystal growth axis and (V/G)crit denotes the V/G value for a silicon single crystal without nitrogen dopant that is contiguous to the boundary of V-region and I-region, and using a cooling rate of at least about 4° C./minute between 1100 and 1000° C., andsubjecting the growing silicon single crystal to simultaneous doping of nitrogen and carbon at a nitrogen concentration of 5×1014 to 5×1015 atoms/cm3 and a carbon concentration of 1×1016 to 1×1018 atoms/cm3;cutting a substrate from the silicon single crystal; anddepositing an epitaxial layer on a surface of the substrate.