초록 ▼

A contact formed in accordance with a process for etching a insulating layer to produce an opening having an aspect ratio of at least 15:1 by first exposing the insulating layer to a second plasma of a second gaseous etchant comprising Ar, Xe, and combinations thereof to form an opening having an as

A contact formed in accordance with a process for etching a insulating layer to produce an opening having an aspect ratio of at least 15:1 by first exposing the insulating layer to a second plasma of a second gaseous etchant comprising Ar, Xe, and combinations thereof to form an opening having an aspect ratio of less than 15:1. Secondly, the insulating layer is exposed to a first plasma of a first gaseous etchant having at least fifty percent helium (He) to etch the opening having an aspect ratio of at least 15:1, thereby increasing the aspect ratio to greater than 15:1, where the first gaseous etchant has a lower molecular weight than the second gaseous etchant.

대표청구항 ▼

1. A contact formed in accordance with a process for etching an insulating layer comprising: first exposing the insulating layer to a second plasma of a second gaseous etchant comprising Ar, Xe, and combinations thereof to form an opening having an aspect ratio of less than 15:1; andsecond exposing

1. A contact formed in accordance with a process for etching an insulating layer comprising: first exposing the insulating layer to a second plasma of a second gaseous etchant comprising Ar, Xe, and combinations thereof to form an opening having an aspect ratio of less than 15:1; andsecond exposing the insulating layer to a first plasma of a first gaseous etchant having at least fifty percent helium (He) to etch the opening having an aspect ratio of at least 15:1, thereby increasing the aspect ratio to greater than 15:1,wherein the first gaseous etchant has a lower molecular weight than the second gaseous etchant. 2. The contact of claim 1, wherein the second gaseous etchant includes He. 3. The contact of claim 2, formed in accordance with the process for etching the insulating layer further comprising exchanging the second gaseous etchant for the first gaseous etchant once the aspect ratio of the etched openings reaches approximately 15:1. 4. The contact of claim 1, where the insulating layer is an oxide selected from the group consisting of silicate glass, silicon oxide, a material formed using one or more silanes, and tetraethyl orthosilicate (TEOS). 5. The contact of claim 1, where the first gaseous etchant is a mixture of He and Ar. 6. The contact of claim 1, where the first gaseous etchant is approximately ninety percent He and approximately ten percent Ar. 7. The contact of claim 1, where the first gaseous etchant is approximately one hundred percent He. 8. The contact of claim 1, wherein the contact has an opening with an aspect ratio of at least 20:1, and has a bottom and a side in the insulating layer that allows an axis perpendicular to the insulating layer to pass through the opening to the bottom uninterrupted by the side of the opening. 9. A contact comprising: an opening having a bottom and a side in a insulating layer that allows an axis perpendicular to the insulating layer to pass through the opening to the bottom uninterrupted by the side of the opening, where the opening defines an essentially elongate symmetrical shape having an aspect ratio of at least 20:1, the opening being formed by: exposing the insulating layer in a plasma etch reactor to a plasma of a first ion gaseous etchant including a first inert gas and a first reactive gas, to etch an opening to an aspect ratio of less than approximately 15:1; andexchanging the first ion gaseous etchant for a second ion gaseous etchant including a second inert gas and a second reactive gas, once the aspect ratio of the etched opening reaches approximately 15:1 to further etch the opening to the aspect ratio of at least 20:1,wherein the second ion gaseous etchant has a lower mean molecular weight of the mixture of the second inert gas and the second reactive gas than the mean molecular weight of the first inert gas and the first reactive gas in the first ion gaseous etchant. 10. The contact of claim 9, where the first inert gas is comprised of a first ion and the second inert gas is comprised of a second ion, wherein the second ion has a lower molecular weight than the first ion. 11. The contact of claim 10, where the first ion is selected from the group consisting of Ar, Xe, krypton (Kr), bromine (Br), large fluorocarbon ions, and combinations there of, and the second ion is selected from the group consisting of He, neon (Ne), chlorine (Cl), and fluorine (F). 12. The contact of claim 9, where the first reactive gas is comprised of a first ion and the second reactive gas is comprised of a second ion, wherein the second ion has a lower molecular weight than the first ion. 13. The contact of claim 12, where the first ion is Br and the second ion is Cl. 14. The contact of claim 9, where a depth of the contact is about eighty (80) nm. 15. The contact of claim 9, wherein layers to form a capacitor for use in a memory device are formed in the opening. 16. A contact, comprising: an opening defining an essentially elongate symmetrical shape having an aspect ratio of at least 20:1 etched on a insulating layer, the opening formed by: exposing the insulating layer in a plasma etch reactor to a plasma of a first ion reactive gas etchant to etch an opening to an aspect ratio of less than approximately 15:1; andexchanging the first ion reactive gas etchant for a second ion reactive gas etchant once the aspect ratio of the etched opening reaches approximately 15:1 to further etch the opening,wherein the second ion reactive gas has a lower molecular weight than the first ion reactive gas. 17. The contact of claim 16, wherein the second ion reactive gas etchant includes at least 50 percent He. 18. The contact of claim 16, wherein the first ion reactive gas etchant includes Ar, Xe, or a combination thereof. 19. The contact of claim 16, where the first ion reactive gas etchant is Br and the second ion reactive gas etchant is Cl.