Slurry compositions and methods of polishing a layer using the slurry compositions
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/461
C09K-013/00
출원번호
US-0853735
(2007-09-11)
등록번호
US-8314028
(2012-11-20)
우선권정보
KR-10-2006-0094755 (2006-09-28)
발명자
/ 주소
Hong, Gi-Sik
Lee, Dong-Jun
Kim, Nam-Soo
Kang, Kyoung-Moon
출원인 / 주소
Samsung Electronics Co., Ltd.
대리인 / 주소
Harness, Dickey & Pierce, P.L.C.
인용정보
피인용 횟수 :
4인용 특허 :
7
초록▼
In a slurry composition and a method of polishing a layer using the slurry composition, the slurry composition includes from about 3 to 20 percent by weight of an abrasive, from about 0.1 to 3 percent by weight of an ionic surfactant, from about 0.01 to 0.1 percent by weight of a nonionic surfactant
In a slurry composition and a method of polishing a layer using the slurry composition, the slurry composition includes from about 3 to 20 percent by weight of an abrasive, from about 0.1 to 3 percent by weight of an ionic surfactant, from about 0.01 to 0.1 percent by weight of a nonionic surfactant, from about 0.01 to 1 percent by weight of a polish accelerating agent including an amino acid compound, and a remainder of an aqueous solution including a basic pH-controlling agent and water. The slurry composition including the nonionic surfactant and the polish accelerating agent may be used for speedily polishing a stepped upper portion of a silicon oxide layer, and may also enable a lower portion of the silicon oxide layer to function as a polish stop layer.
대표청구항▼
1. A method of polishing a layer comprising: performing a first polishing process using a slurry composition on a silicon oxide layer including a first portion having a first height and a second portion having a second height substantially lower than the first height to thereby partially remove the
1. A method of polishing a layer comprising: performing a first polishing process using a slurry composition on a silicon oxide layer including a first portion having a first height and a second portion having a second height substantially lower than the first height to thereby partially remove the first portion before a polishing pressure is applied to the second portion; andperforming a second polishing process on the silicon oxide layer using the slurry composition until the second portion functions as a polish stop layer,wherein the slurry composition includes from about 3 to 20 percent by weight of an abrasive, from about 0.1 to 3 percent by weight of an ionic surfactant, from about 0.01 to 0.1 percent by weight of a nonionic surfactant, from about 0.01 to 1 percent by weight of a polish accelerating agent including an amino acid compound, and a remainder of an aqueous solution including a basic pH-controlling agent and water, andwherein the performing a second polishing process is conducted such that the first portion of the silicon oxide layer is not completely removed by the second polishing process and without reducing the first height to the second height. 2. The method of claim 1, wherein the first polishing process is performed under a polishing pressure from of about 4.5 to 8 psi, and the second polishing process is performed under a polishing pressure of from about 1.5 to 4 psi. 3. The method of claim 1, wherein the slurry composition has a pH of from about 4 to 6.5. 4. The method of claim 1, wherein the amino acid compound comprises glutamic acid, aspartic acid or a combination thereof. 5. A method of polishing a layer comprising: preparing a silicon oxide layer formed on a substrate having a structure, the silicon oxide layer including a first portion having a first height substantially higher than a height of the structure and a second portion having a second height substantially lower than the first height;performing a first polishing process on the silicon oxide layer using a slurry composition to partially remove the first portion before a polishing pressure is substantially applied to the second portion; andperforming a second polishing process on the silicon oxide layer using the slurry composition such that a polishing pressure is substantially applied until the second portion functions as a polish stop layer,wherein the slurry composition includes from about 3 to 20 percent by weight of an abrasive, from about 0.1 to 3 percent by weight of an ionic surfactant, from about 0.01 to 0.1 percent by weight of a nonionic surfactant, from about 0.01 to 1 percent by weight of a polish accelerating agent including an amino acid compound, and a remainder of an aqueous solution including a basic pH-controlling agent and water, andwherein the performing a second polishing process is conducted such that the first portion of the silicon oxide layer is not completely removed by the second polishing process and without reducing the first height to the second height. 6. The method of claim 5, wherein the first portion of the silicon oxide layer is formed in a cell region of the substrate, and the second portion of the silicon oxide layer is formed in a peripheral region of the substrate. 7. The method of claim 5, wherein the first polishing process is performed under a polishing pressure from of about 4.5 to 8 psi, and the second polishing process is performed under a polishing pressure of from about 1.5 to 4 psi. 8. The method of claim 5, wherein the slurry composition has a pH of from about 4 to 6.5. 9. The method of claim 5, wherein the amino acid compound comprises glutamic acid, aspartic acid or a combination thereof. 10. The method of claim 5, wherein the ionic surfactant comprises at least one of polyacrylic acid, poly (acrylic acid-co-maleic acid), polyacrylamide, poly(acrylamide-co-acrylic acid), polyethylene glycol behenyl ether methacrylate and polyethylene glycol diacid, and the nonionic surfactant comprises at least one of a polyoxyethylene ether, a polyoxyethylene ester and a sorbitan fatty acid ester. 11. The method of claim 1, wherein the amino acid compound comprises glutamic acid. 12. The method of claim 5, wherein the amino acid compound comprises glutamic acid. 13. The method of claim 1, further comprising: forming a first passivation layer on the silicon oxide layer with the ionic surfactant. 14. The method of claim 13, further comprising: forming a second passivation layer on the silicon oxide layer with the nonionic surfactant. 15. The method of claim 1, wherein the second portion of the silicon oxide layer remains lower than the first portion after the second polishing process. 16. The method of claim 5, further comprising: forming a first passivation layer on the silicon oxide layer with the ionic surfactant. 17. The method of claim 16, further comprising: forming a second passivation layer on the silicon oxide layer with the nonionic surfactant. 18. The method of claim 5, wherein the second portion of the silicon oxide layer remains lower than the first portion after the second polishing process. 19. The method of claim 1, wherein the first portion is formed in a cell region and the second portion is formed in a peripheral region. 20. The method of claim 5, wherein the first portion is formed in a cell region and the second portion is formed in a peripheral region. 21. A method of polishing a layer comprising: performing a first polishing process using a slurry composition on a silicon oxide layer including a first portion having a first height and a second portion having a second height substantially lower than the first height to thereby partially remove the first portion before a polishing pressure is applied to the second portion; andperforming a second polishing process on the silicon oxide layer using the slurry composition until the second portion functions as a polish stop layer,wherein the slurry composition includes from about 3 to 20 percent by weight of an abrasive, from about 0.1 to 3 percent by weight of an ionic surfactant, from about 0.01 to 0.1 percent by weight of a nonionic surfactant, from about 0.01 to 1 percent by weight of a polish accelerating agent including an amino acid compound, and a remainder of an aqueous solution including a basic pH-controlling agent and water,wherein the second portion of the silicon oxide layer remains lower than the first portion after the second polishing process.
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이 특허에 인용된 특허 (7)
Oswald, Eric; Frink, Sean; Kraft, Bradley; Santora, Brian, Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide.
Takanori Kido JP; Kagetaka Ichikawa JP, Composition for polishing a semiconductor device and process for manufacturing a semiconductor device using the same.
Subramanian Chitra K. (Austin TX) Perera Asanga H. (Austin TX) Hayden James D. (Austin TX) Iyer Subramoney V. (Austin TX), Multi-step planarization process using polishing at two different pad pressures.
Li, Tina; Dockery, Kevin; Jia, Renhe; Dysard, Jeffrey, CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity.
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