[특허]Methods of curing non-carbon flowable CVD films

Methods of curing non-carbon flowable CVD films 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-016/40
출원번호	US-0891937 (2010-09-28)
등록번호	US-8449942 (2013-05-28)
발명자 / 주소	Liang, Jingmei Hong, Sukwon
출원인 / 주소	Applied Materials, Inc.
대리인 / 주소	Kilpatrick Townsend Stockton LLP
인용정보	피인용 횟수 : 20 인용 특허 : 160

초록 ▼

A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-containing precursor with a radical-nitrogen-and/or-hydrogen precursor, and depositing a silicon-nitrogen-and-hydrogen-containing layer on a substrate. The conversion of the silicon-nitrogen-and-hydrogen-containing layer to a silicon-and-oxygen-containing layer is then initiated by a low temperature anneal (a “cure”) in an ozone-containing atmosphere. The conversion of the silicon-and-nitrogen film to silicon oxide in the ozone-containing atmosphere may be incomplete and augmented by a higher temperature anneal in an oxygen-containing environment.

대표청구항 ▼

1. A method of forming a silicon oxygen layer on a substrate in a plasma-free substrate processing region in a substrate processing chamber, the method comprising: depositing a carbon-free silicon-nitrogen-and-hydrogen-containing layer on the substrate; andcuring the silicon-nitrogen-and-hydrogen-containing layer at a curing temperature in an ozone-containing atmosphere to convert the silicon-nitrogen-and-hydrogen-containing layer into the silicon oxide layer, wherein the curing temperature is increased during the curing operation from a temperature below or about 250° C. to a higher temperature above 400° C. to further convert the carbon-free silicon-nitrogen-and-hydrogen-containing layer to the silicon oxide layer. 2. The method of claim 1 wherein the carbon-free silicon-nitrogen-and-hydrogen-containing layer is formed by: flowing a nitrogen-and/or-hydrogen-containing precursor into a plasma region to produce a radical-nitrogen-and/or-hydrogen precursor;combining a carbon-free silicon-containing precursor with the radical-nitrogen-and/or-hydrogen precursor in the plasma-free substrate processing region; anddepositing the carbon-free silicon-nitrogen-and-hydrogen-containing layer on the substrate. 3. The method of claim 2 wherein the nitrogen-and/or-hydrogen-containing gas comprises at least one of N2H2, NH3, N2 and H2. 4. The method of claim 2 wherein the nitrogen-and/or-hydrogen-containing precursor contains nitrogen and the carbon-free silicon-containing precursor is essentially nitrogen-free. 5. The method of claim 2 wherein the nitrogen-and/or-hydrogen-containing precursor is nitrogen-free and the carbon-free silicon-containing precursor contains nitrogen. 6. The method of claim 2 wherein the carbon-free silicon-containing precursor comprises a silicon-and-nitrogen-containing precursor. 7. The method of claim 2 wherein the carbon-free silicon-containing precursor comprises N(SiH3)3. 8. The method of claim 2 wherein the carbon-free silicon-nitrogen-and-hydrogen-containing layer comprises Si—N and Si—H bonds. 9. The method of claim 2 wherein the plasma region is in a remote plasma system. 10. The method of claim 2 wherein the plasma region is a partitioned portion of the substrate processing chamber separated from the plasma-free substrate processing region by a showerhead. 11. The method of claim 1 wherein the curing temperature is less than or about 400° C. 12. The method of claim 1 wherein the curing temperature is less than or about 200° C. 13. The method of claim 1 wherein the ozone-containing atmosphere further comprises steam (H2O) while the substrate is at the higher temperature. 14. The method of claim 1 further comprising raising a temperature of the substrate to an oxygen anneal temperature above or about 600° C. in an oxygen-containing atmosphere. 15. The method of claim 14 wherein the oxygen-containing atmosphere comprises one or more gases selected from the group consisting of atomic oxygen, ozone, nitrogen dioxide, and steam (H2O). 16. The method of claim 1 wherein the substrate is patterned and has a trench having a width of about 50 nm or less. 17. The method of claim 16 wherein the silicon oxide layer in the trench is substantially void-free. 18. The method of claim 1 wherein the silicon oxide consists essentially of silicon and oxygen.

이 특허에 인용된 특허 (160)

Cheung, Jeff S.; Demos, Alexandros T., Apparatus and process for controlling the temperature of a substrate in a plasma reactor.
상세보기
van de Ven Everhardus P. ; Broadbent Eliot K. ; Benzing Jeffrey C. ; Chin Barry L. ; Burkhart Christopher W. ; Lane Lawrence C. ; McInerney Edward John, Apparatus for preventing deposition on frontside peripheral region and edge of wafer in chemical vapor deposition appar.
상세보기
van de Ven Everhardus P. (Saratoga CA) Broadbent Eliot K. (San Jose CA) Benzing Jeffrey C. (Saratoga CA) Chin Barry L. (Saratoga CA) Burkhart Christopher W. (Los Gatos CA), Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate.
상세보기
Davis Cecil J. (Greenville TX) Matthews Robert T. (Plano TX), Apparatus for transferring workpieces.
상세보기
Anderson, Roger N.; Comita, Paul B.; Waldhauer, Ann; Riley, Norma B., Apparatuses and methods for depositing an oxide film.
상세보기
Janakiraman, Karthik; Suarez, Edwin C., Blocker plate by-pass for remote plasma clean.
상세보기
Zhao Jun (Milpitas CA) Cho Tom (San Francisco CA) Dornfest Charles (Fremont CA) Wolff Stefan (Sunnyvale CA) Fairbairn Kevin (Saratoga CA) Guo Xin S (Mountain View CA) Schreiber Alex (Santa Clara CA) , CVD Processing chamber.
상세보기
Cheung, David; Yau, Wai-Fan; Mandal, Robert R., CVD plasma assisted low dielectric constant films.
상세보기
Zhao Jun ; Cho Tom ; Dornfest Charles ; Wolff Stefan ; Fairbairn Kevin ; Guo Xin Sheng ; Schreiber Alex ; White John M., CVD processing chamber.
상세보기
Todd, Michael A., CVD syntheses of silicon nitride materials.
상세보기
Witek Keith E. ; Chen Mike Hsiao-Hui ; Poon Stephen Shiu-Kong, Capped shallow trench isolation and method of formation.
상세보기
Cohen Stephan A. (Wappingers Falls NY) McGahay Vincent J. (Poughkeepsie NY) Uttecht Ronald R. (Essex Junction VT), Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits.
상세보기
Sahin, Turgut; Wang, Yaxin; Xi, Ming, Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application.
상세보기
Ingle, Nitin K.; Yuan, Zheng; Gee, Paul; Sapre, Kedar, Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen.
상세보기
Hanahata, Hiroyuki; Araki, Toru; Nakamura, Mikihiko, Coating composition for the production of insulating thin films.
상세보기
Thakur Randhir P. S. ; Deboer Scott J., Conditioning of dielectric materials.
상세보기
Seitz, Mihel; Knorr, Andreas; McStay, Irene, Control of separation between transfer gate and storage node in vertical DRAM.
상세보기
Mallick, Abhijit Basu; Nemani, Srinivas D.; Weidman, Timothy W., Curing methods for silicon dioxide multi-layers.
상세보기
Mallick, Abhijit Basu; Nemani, Srinivas D.; Weidman, Timothy W., Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process.
상세보기
Li, Shijian; Wang, Yaxin; Redeker, Fred C.; Ishikawa, Tetsuya; Collins, Alan W., Deposition chamber and method for depositing low dielectric constant films.
상세보기
Chen, Xiaolin; Nemani, Srinivas D.; Venkataraman, Shankar, Deposition-plasma cure cycle process to enhance film quality of silicon dioxide.
상세보기
Moghadam Farhad K. (Los Gatos CA), Dielectric deposition and cleaning process for improved gap filling and device planarization.
상세보기
Lubomirsky, Dmitry; Nemani, Srinivas D.; Yieh, Ellie, Dielectric deposition and etch back processes for bottom up gapfill.
상세보기
Law Kam S. ; Robertson Robert M. ; Shang Quanyuan ; Olsen Jeff ; Sorensen Carl, Dual frequency excitation of plasma for film deposition.
상세보기
Solomon, Glenn S.; Miller, David J.; Ueda, Tetsuzo, Epitaxial film produced by sequential hydride vapor phase epitaxy.
상세보기
van de Ven Everhardus P. ; Broadbent Eliot K. ; Benzing Jeffrey C. ; Chin Barry L. ; Burkhart Christopher W. ; Lane Lawrence C., Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus.
상세보기
van de Ven Everhardus P. ; Broadbent Eliot K. ; Benzing Jeffrey C. ; Chin Barry L. ; Burkhart Christopher W. ; Lane Lawrence C. ; McInerney Edward J., Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus.
상세보기
Gauri, Vishal; Humayun, Raashina; Lang, Chi I; Huang, Judy H.; Barnes, Michael; Shanker, Sunil, Flowable film dielectric gap fill process.
상세보기
Farhad K. Moghadam ; David W. Cheung ; Ellie Yieh ; Li-Qun Xia ; Wai-Fan Yau ; Chi-I Lang ; Shin-Puu Jeng TW; Frederic Gaillard FR; Shankar Venkataraman ; Srinivas Nemani, Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound.
상세보기
Mallick,Abhijit Basu; Munro,Jeffrey C.; Nemani,Srinivas D., Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II--remote plasma enhanced deposition processes.
상세보기
Vaudo Robert P. ; Redwing Joan M. ; Tischler Michael A. ; Brown Duncan W., GaN-based devices using (Ga, AL, In)N base layers.
상세보기
Bayman, Atiye; Rahman, Md Sazzadur; Zhang, Weijie; van Schravendijk, Bart; Gauri, Vishal; Papasoulitotis, George D.; Singh, Vikram, Gap fill for high aspect ratio structures.
상세보기
Ingle,Nitin K.; Wong,Shan; Xia,Xinyun; Banthia,Vikash; Bang,Won B.; Wang,Yen Kun V.; Yuan,Zheng, Gap-fill depositions in the formation of silicon containing dielectric materials.
상세보기
Ingle,Nitin K.; Wong,Shan; Xia,Xinyun; Banthia,Vikash; Bang,Won B.; Wang,Yen Kun V., Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials.
상세보기
van de Ven Everhardus P. ; Broadbent Eliot K. ; Benzing Jeffrey C. ; Chin Barry L. ; Burkhart Christopher W., Gas-based substrate deposition protection.
상세보기
Visokay,Mark R.; Rotondaro,Antonio L. P.; Colombo,Luigi, Gate dielectric and method.
상세보기
Runkowske, Holger; Boness, Jan Dirk; Aslam, Muhammed; Zeise, Eric K., Gloss/density measurement device with feedback to control gloss and density of images produced by an electrographic reproduction apparatus.
상세보기
Kobayashi, Junko; Goetz, Werner K., Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers.
상세보기
Cerny, Glenn Allen; Hwang, Byung Keun; Loboda, Mark Jon, H:SiOC coated substrates.
상세보기
Chen,Xiaolin; Bloking,Jason, HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance.
상세보기
Frankel, Jonathan; Ponnekanti, Hari; Shmurun, Inna; Sivaramakrishnan, Visweswaren, Heater/lift assembly for high temperature processing chamber.
상세보기
Mallick, Abhijit Basu; Nemani, Srinivas D.; Yieh, Ellie, High quality silicon oxide films by remote plasma CVD from disilane precursors.
상세보기
Mallick, Abhijit Basu; Nemani, Srinivas D.; Yieh, Ellie, High quality silicon oxide films by remote plasma CVD from disilane precursors.
상세보기
Raaijmakers, Ivo; Werkhoven, Christiaan, In situ dielectric stacks.
상세보기
Entley, William R.; Langan, John G.; Hall, Randy, In situ plasma process to remove fluorine residues from the interior surfaces of a CVD reactor.
상세보기
Wang, Linlin; Mallick, Abhijit Basu; Ingle, Nitin K.; Venkataraman, Shankar, In-situ ozone cure for radical-component CVD.
상세보기
Li Haojiang ; Wu Robert W., Independent gas feeds in a plasma reactor.
상세보기
Denning Dean J. ; Hegde Rama I. ; Garcia Sam S. ; Fiordalice Robert W., Inert plasma gas surface cleaning process performed insitu with physical vapor deposition (PVD) of a layer of material.
상세보기
Oh, Yong-chul; Jin, Gyo-young, Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the same.
상세보기
Nemani, Srinivas D.; Lee, Young S.; Yieh, Ellie Y.; Wang, Anchuan; Bloking, Jason Thomas; Han, Lung Tien, Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD.
상세보기
Karthik Janakiraman ; Kelly Fong ; Chen-An Chen ; Paul Le ; Rong Pan ; Shankar Venkataraman, Integration of remote plasma generator with semiconductor processing chamber.
상세보기
Hsia Shaw-Tzeng (Taipei TWX) Chen Kuang-Chao (Taipei TWX), Inter-metal-dielectric planarization process.
상세보기
Chua Chee Tee,SGX ; Lee Yuan-Ping,SGX ; Zhou Mei Sheng,SGX ; Chan Lap, Laser curing of spin-on dielectric thin films.
상세보기
Van Autryve Luc,FRX ; Lang Stefan Oswald,DEX, Localizing cleaning plasma for semiconductor processing.
상세보기
O'Neill, Mark Leonard; Peterson, Brian Keith; Vincent, Jean Louise; Vrtis, Raymond Nicholas, Low dielectric constant material and method of processing by CVD.
상세보기
Mahajani, Maitreyee; Huang, Yi-Chiau; McDougall, Brendan, Low temperature ALD SiO.
상세보기
Fucsko, Janos; Smythe, III, John A; Li, Li; Waldo, Grady S, Low temperature process for polysilazane oxidation/densification.
상세보기
Rose, Peter; Lopata, Eugene; Felts, John, Low κ dielectric inorganic/organic hybrid films and method of making.
상세보기
Yuan,Zheng; Arghavani,Reza; Yieh,Ellie Y; Venkataraman,Shankar, Low-thermal-budget gapfill process.
상세보기
Shin Daeshik (Kawasaki JPX), Manufacture of planarized insulating layer.
상세보기
Hasebe,Kazuhide; Endoh,Atsushi; Suzuki,Daisuke; Suzuki,Keisuke, Method and apparatus for forming silicon oxide film.
상세보기
Ikeda Yasuo (Tokyo JPX), Method and apparatus for forming silicon oxide film by chemical vapor deposition.
상세보기
Xia Li-Qun ; Sivaramakrishnan Visweswaren ; Nemani Srinivas ; Yieh Ellie ; Fong Gary, Method and apparatus for gettering fluorine from chamber material surfaces.
상세보기
Vincent E. Burkhart ; Steven Sansoni ; Michael N. Sugarman ; Anthony Chan, Method and apparatus for reducing thermal gradients within a substrate support.
상세보기
Kim, Chul-Sung; Choi, Si-Young; Park, Jung-Woo; Ryu, Jong-Ryol; Lee, Byeong-Chan, Method and device for forming an STI type isolation in a semiconductor device.
상세보기
Mallick, Abhijit Basu; Munro, Jeffrey C.; Wang, Linlin; Nemani, Srinivas D.; Zheng, Yi; Yuan, Zheng; Lubomirsky, Dimitry; Yieh, Ellie Y., Method and system for improving dielectric film quality for void free gap fill.
상세보기
Mahanpour, Mehrdad; Massoodi, Mohammad; Hulog, Jose, Method and system for reducing polymer build up during plasma etch of an intermetal dielectric.
상세보기
Cho,Byoung Ha; Kim,Yong Il; Shin,Cheol Ho; Lee,Won Hyung; Kim,Jung Soo; Sim,Sang Tae, Method for atomic layer deposition (ALD) of silicon oxide film.
상세보기
Papasouliotis,George D.; Tarafdar,Raihan M.; Rulkens,Ron; Hausmann,Dennis M.; Tobin,Jeff; Tipton,Adrianne K.; Nie,Bunsen, Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition.
상세보기
Harvey, Keith R.; Lim, Tian-Hoe; Xia, Li-Qun, Method for densification of CVD carbon-doped silicon oxide films through UV irradiation.
상세보기
Munro, Jeffrey C.; Nemani, Srinivas D., Method for depositing and curing low-k films for gapfill and conformal film applications.
상세보기
Kwok Kurt (Mountain View CA) Robertson Robert (Palo Alto CA), Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity.
상세보기
Li Li ; Thakur Randhir ; Hawthorne Richard C., Method for forming a dielectric.
상세보기
Perera Asanga H., Method for forming a trench isolation structure in an integrated circuit.
상세보기
Perera, Asanga H., Method for forming a trench isolation structure in an integrated circuit.
상세보기
Cho, Ching-Wen; Chang, Kuwi-Jen; Chen, Sen-Fu; Lin, Kuang-Peng; Tay, Shing-Jzy; Yang, Szu-Hung; Chang, Chai-Der; Huang, Kuo-Su; Leu, Jen-Shiang; Fang, Weng-Liang; Wang, Jyh-Ping; Lee, Jow-Feng, Method for forming corrosion inhibited conductor layer.
상세보기
Park,Jae eun; Chu,Kang soo; Lee,Joo won; Yang,Jong ho, Method for forming silicon dioxide film using siloxane.
상세보기
Hah Hyung C. (Kwangmyung-City KRX) Kim Jung T. (Seoul KRX) Baek Yong K. (Seoul KRX) Cheon Hee K. (Seoul KRX), Method for maintaining the resistance of a high resistive polysilicon layer for a semiconductor device.
상세보기
Lin Shih-Chi,TWX, Method for making a novel graded silicon nitride/silicon oxide (SNO) hard mask for improved deep sub-micrometer semiconductor processing.
상세보기
Iyechika Yasushi (Ibaraki JPX) Takada Tomoyuki (Ibaraki JPX), Method for manufacturing group III-V compound semiconductor crystals.
상세보기
Stringfellow Gerald B. (Palo Alto CA) Hall ; Jr. Howard T. (Palo Alto CA), Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a.
상세보기
Papasouliotis, George D.; Tas, Robert D., Method of chemical modification of structure topography.
상세보기
Yin, Zhiping, Method of decontaminating process chambers, methods of reducing defects in anti-reflective coatings, and resulting semiconductor structures.
상세보기
Li,Li; Li,Weimin, Method of eliminating residual carbon from flowable oxide fill.
상세보기
Hashimoto, Shigeki, Method of fabricating group III-V nitride compound semiconductor and method of fabricating semiconductor device.
상세보기
Hsiao Chih-Hsiang,TWX, Method of fabricating shallow trench isolation using high density plasma CVD.
상세보기
Bender David L. (Muscatine IA) Brugman William H. (Muscatine IA) Myers Floyd S. (Muscatine IA), Method of fabrication of composite tire thread.
상세보기
Vassiliev Vladislav,SGX ; Peidous Igor,SGX, Method of filling shallow trenches.
상세보기
Cho, Young-Joo; Hong, Eun-Kee; Lee, Ju-Bum, Method of forming an interlayer dielectric film.
상세보기
Oh Yong-chul,KRX ; Park Young-Woo,KRX, Method of forming an isolation trench in a semiconductor device including annealing at an increased temperature.
상세보기
Agarwal Vishnu K. ; Derderian Garo J. ; Sandhu Gurtej S., Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell.
상세보기
Camilletti Robert C. (Midland MI) Dall Fredric C. (Merrill MI) Dunn Diana K. (Midland MI), Method of forming si-o containing coatings.
상세보기
Wang Larry Yu, Method of forming trench isolation with high integrity, ultra thin gate oxide.
상세보기
Klaus Jason ; Sneh Ofer ; George Steven M., Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry.
상세보기
Wai-Fan Yau ; David Cheung ; Nasreen Gazala Chopra ; Yung-Cheng Lu ; Robert Mandal ; Farhad Moghadam, Method of improving moisture resistance of low dielectric constant films.
상세보기
Carl Dan (Mountainview CA) Dobuzinsky David M. (Hopewell Junction NY) Nguyen Son V. (Hopewell Junction NY) Nguyen Tue (Vancouver WA), Method of making TA₂O₅ thin film by low temperature ozone plasma annealing (oxidation).
상세보기

Lin Kang-Cheng,TWX ; Hong Hong-Jye,TWX, Method of making a polysilicon carbon source/drain heterojunction thin-film transistor.
상세보기

Sun Sey-Ping ; Gardner Mark I. ; Song Shengnian, Method of making an ultra thin silicon nitride film.
상세보기

Spikes ; Jr. Thomas E. ; Sun Sey-Ping ; Dawson Robert, Method of manufacturing an isolation region in a semiconductor device using a flowable oxide-generating material.
상세보기

Zenke Masanobu,JPX, Method of manufacturing semiconductor device.
상세보기

Ross, Matthew, Method of processing films prior to chemical vapor deposition using electron beam processing.
상세보기

Sandhu Gurtej S. (Boise ID), Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor com.
상세보기

Karim, M. Ziaul; Moghadam, Farhad K.; Salimian, Siamak, Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation.
상세보기

Liang, Jingmei, Methods for forming a dielectric layer within trenches.
상세보기

Nemani, Srinivas D.; Mallick, Abhijit Basu; Yieh, Ellie Y., Methods for forming a silicon oxide layer over a substrate.
상세보기

Michael T. Carter ; William J. Donahue, Methods for low and ambient temperature preparation of precursors of compounds of group III metals and group V elements.
상세보기

Dussarrat,Christian; Girard,Jean Marc; Kimura,Takako; Tamaoki,Naoki; Sato,Yuusuke, Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition.
상세보기

Maes, Jan Willem, Methods of depositing two or more layers on a substrate in situ.
상세보기

Wang Chen-Jong,TWX ; Yoo Chue-San,TWX ; Cheng Kuo-Hsien,TWX, Multi-layer silicon nitride deposition method for forming low oxidation temperature thermally oxidized silicon nitride/silicon oxide (no) layer.
상세보기

Chen, David; Shepherd, Jr., Robert A.; Gauri, Vishal; Papasouliotis, George D., Multi-step deposition and etch back gap fill process.
상세보기

Wakino Kikuo (Muko JPX) Mandai Harufumi (Takatsuki JPX), Multilayer printed circuit board.
상세보기

Umotoy Salvador P. ; Lei Lawrence C. ; Nguyen Anh N. ; Chiao Steve H., One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system.
상세보기

Geissler Stephen F. (Underhill VT) Korejwa Josef W. (Shelburne VT) Lasky Jerome B. (Essex Junction VT) Pan Pai-Hung (Hopewell Junction NY), Oxidation of silicon nitride in semiconductor devices.
상세보기

Li, DongQing; Liang, Jingmei; Ingle, Nitin K., Oxide-rich liner layer for flowable CVD gapfill.
상세보기

Sakuma, Takeshi, Photo-excited gas processing apparatus for semiconductor process.
상세보기

Han, Qingyuan; Berry, Ivan; Sakthivel, Palani; Waldfried, Carlo, Plasma ashing process.
상세보기

Wang,Feng; Schulberg,Michelle T.; Sun,Jianing; Humayun,Raashina; Van Cleemput,Patrick A., Plasma detemplating and silanol capping of porous dielectric films.
상세보기

Gabriel, Calvin T.; Okada, Lynne A.; Hopper, Dawn M.; Pangrle, Suzette K.; Wang, Fei, Plasma etch process for nonhomogenous film.
상세보기

Khan, Anisul; Podlesnik, Dragan; Kim, Nam-Hun; Lee, Gene, Plasma etching of silicon using fluorinated gas mixtures.
상세보기

Reichelderfer ; deceased Richard F. (late of Pleasanton CA by Desire Reichelderfer ; legal representative) McOmber Janice I. (Redwood City CA) Ryan Andrew P. (Napa CA) Davies John T. (El Sobrante CA), Plasma reactor and process with wafer temperature control.
상세보기

Miller,Gayle; Brown,Eric, Polish stop and sealing layer for manufacture of semiconductor devices with deep trench isolation.
상세보기

Schultz Yamasaki Nancy Lee ; Martinu Ludvik,CAX ; Klemberg-Sapieha Jolanta E.,CAX, Polymeric optical substrate method of treatment.
상세보기

Xiao,Manchao; Hochberg,Arthur Kenneth; Cuthill,Kirk Scott, Precursors for depositing silicon containing films and processes thereof.
상세보기

Cheng, Hansong; Xiao, Manchao; Lal, Gauri Sankar; Gaffney, Thomas Richard; Zhou, Chenggang; Wu, Jinping, Precursors for depositing silicon-containing films and methods for making and using same.
상세보기

Joret, Laurent, Process for depositing at least one thin layer based on silicon nitride or oxynitride on a transparent substrate.
상세보기

Suzuki,Shinji, Process for producing a film for controlling the chemotactic function and an artificial material and process for producing the artificial material.
상세보기

Yaxin Wang ; Diana Chan ; Turgut Sahin ; Tetsuya Ishikawa ; Farhad Moghadam, Process gas distribution for forming stable fluorine-doped silicate glass and other films.
상세보기

Liu Jiann (Irving TX) Davis Cecil J. (Greenville TX) Loewenstein Lee M. (Plano TX), Processing apparatus.
상세보기

Freeman Dean W. (Garland TX) Burris James B. (Dallas TX) Davis Cecil J. (Greenville TX) Lowenstein Lee M. (Plano TX), Processing apparatus and method.
상세보기

Moslehi Mehrdad M. (Dallas TX), Real-time multi-zone semiconductor wafer temperature and process uniformity control system.
상세보기

Kweskin, Sasha; Gee, Paul Edward; Venkataraman, Shankar; Sapre, Kedar, Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor.
상세보기

Park, Soonam; Jeon, Soo; Tran, Toan Q.; Yang, Jang-Gyoo; Liang, Qiwei; Lubomirsky, Dmitry, Remote plasma source seasoning.
상세보기

Pinigis Edward P. (Fairhaven MA), Rubber composition for use with potable water.
상세보기

Tsujikawa, Shimpei; Yugami, Jiro; Mine, Toshiyuki; Ushiyama, Masahiro, Semiconductor device and production method thereof.
상세보기

Chu, Kang-soo; Lee, J o-won; Park, Jae-eun; Yang, Jong-ho, Semiconductor device having an etch stopper formed of a sin layer by low temperature ALD and method of fabricating the same.
상세보기

DeBoer, Scott Jeffrey; Moore, John T., Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride.
상세보기

Gardner Mark I. ; Gilmer Mark C., Semiconductor trench isolation structure formed substantially within a single chamber.
상세보기

Orczyk Maciek ; Murugesh Laxman ; Narwankar Pravin, Sequencing of the recipe steps for the optimal low-k HDP-CVD processing.
상세보기

Tarafdar,Raihan M.; Papasouliotis,George D.; Rulkens,Ron; Hausmann,Dennis M.; Tobin,Jeff; Tipton,Adrianne K.; Nie,Bunsen, Sequential deposition/anneal film densification method.
상세보기

Moghadam,Farhad K.; Cox,Michael S.; Krishnaraj,Padmanabhan; Pham,Thanh N., Sequential gas flow oxide deposition technique.
상세보기

Rossman, Kent, Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput.
상세보기

Kumagai, Akira; Ishibashi, Keiji; Mori, Shigeru, Silicon oxide film formation method.
상세보기

Al Bayati,Amir; Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Gallo,Biagio; Nguyen,Andrew, Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement.
상세보기

Kweskin, Sasha; Gee, Paul Edward; Venkataraman, Shankar; Sapre, Kedar, Silicon-ozone CVD with reduced pattern loading using incubation period deposition.
상세보기

Reinberg Alan R. (Dallas TX), Single component monomer for silicon nitride deposition.
상세보기

Hsia Liang-Choo,TWX ; Chang Thomas,TWX, Stacked capacitor having improved charge storage capacity.
상세보기

Lage Craig S. (Austin TX) Baker Frank K. (Austin TX) Hayden James D. (Austin TX) Cooper Kent J. (Austin TX), Static-random-access memory cell and an integrated circuit having a static-random-access memory cell.
상세보기

Liang, Jingmei; Patel, Anjana M.; Ingle, Nitin K.; Venkataraman, Shankar, Stress management for tensile films.
상세보기

Aoyama,Shintaro; Igeta,Masanobu; Shinriki,Hiroshi, Substrate processing method and a computer readable storage medium storing a program for controlling same.
상세보기

Ono Tetsuo (Kokubunji JPX) Hiraoka Susumu (Kokubunji JPX) Suzuki Keizo (Kodaira JPX), Surface fabricating device.
상세보기

Okaue Etsuo (Nagano-ken JPX) Nakajima Mikito (Nagano-ken JPX) Kubota Satoshi (Nagano-ken JPX) Mogami Takao (Nagano-ken JPX), Synthetic resin ophthalmic lens having an inorganic coating.
상세보기

Selbrede, Steven C.; Mackie, Neil M.; Zucker, Martin L., Systems and methods for remote plasma clean.
상세보기

Xia, Li-Qun; Geiger, Fabrice; Gaillard, Frederic; Yieh, Ellie; Lim, Tian H., Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film.
상세보기

Thomas, Michael E., Thermal oxidation method utilizing atomic oxygen to reduce dangling bonds in silicon dioxide grown on silicon.
상세보기

Haukka,Suvi P.; Raaijmakers,Ivo; Li,Wei Min; Kostamo,Juhana; Sprey,Hessel, Thin films.
상세보기

Basceri, Cem; Rhodes, Howard E.; Sandhu, Gurtej; Gealy, F. Daniel; Graettinger, Thomas M., Top electrode in a strongly oxidizing environment.
상세보기

Rossman, Kent; Li, Zhuang; Lee, Young, Trench fill with HDP-CVD process including coupled high power density plasma deposition.
상세보기

Harvey, Keith R.; Lim, Tian-Hoe; Xia, Li-Qun, UV radiation source for densification of CVD carbon-doped silicon oxide films.
상세보기

Waldfried, Carlo; Han, Qingyuan; Escorcia, Orlando; Berry, III, Ivan L., Ultraviolet curing processes for advanced low-k materials.
상세보기

van de Ven Everhardus P. (Cupertino CA) Broadbent Eliot K. (San Jose CA) Benzing Jeffrey C. (San Jose CA) Chin Barry L. (Sunnyvale CA) Burkhart Christopher W. (San Jose CA), Wafer surface protection in a gas deposition process.
상세보기

이 특허를 인용한 특허 (20)

Nemani, Srinivas D.; Chen, Erica; Godet, Ludovic; Xue, Jun; Yieh, Ellie Y., Advanced process flow for high quality FCVD films.
상세보기

Liang, Jingmei; Thadani, Kiran V.; Kachian, Jessica S.; Rajagopalan, Nagarajan, FCVD line bending resolution by deposition modulation.
상세보기

Chatterjee, Amit, Flowable carbon film by FCVD hardware using remote plasma PECVD.
상세보기

Wang, Kuan-Cheng; Hsu, Chun-Hao; Hsiaw, Han-Ti; Lin, Keng-Chu, Flowable films and methods of forming flowable films.
상세보기

Khan, Adib M.; Liang, Qiwei; Malik, Sultan; Wong, Keith Tatseun; Nemani, Srinivas D., Gas delivery system for high pressure processing chamber.
상세보기

Liang, Qiwei; Nemani, Srinivas D.; Khan, Adib; Kasibhotla, Venkata Ravishankar; Malik, Sultan; Kang, Sean S.; Wong, Keith Tatseun, High pressure wafer processing systems and related methods.
상세보기

Chatterjee, Amit; Mallick, Abhijit Basu; Ingle, Nitin K.; Underwood, Brian; Thadani, Kiran V.; Chen, Xiaolin; Dube, Abhishek; Liang, Jingmei, Low cost flowable dielectric films.
상세보기

Hong, Sukwon; Tran, Toan; Mallick, Abhijit; Liang, Jingmei; Ingle, Nitin K., Low shrinkage dielectric films.
상세보기

Thadani, Kiran V.; Liang, Jingmei; Lee, Young S.; Srinivasan, Mukund, Low-K dielectric gapfill by flowable deposition.
상세보기

Meyer Timmerman Thijssen, Rutger; Verhaverbeke, Steven; Johnson, Joseph R., Method for creating a high refractive index wave guide.
상세보기

Nemani, Srinivas D., Method for patterning a semiconductor substrate.
상세보기

Moon, Kang-hun; Tak, Yong-suk; Park, Gi-gwan, Method of forming SiOCN material layer and method of fabricating semiconductor device.
상세보기

Leschkies, Kurtis; Verhaverbeke, Steven, Method of forming a barrier layer for through via applications.
상세보기

Lubomirsky, Dmitry; Pinson, II, Jay D.; Floyd, Kirby H.; Khan, Adib; Venkataraman, Shankar, Module for ozone cure and post-cure moisture treatment.
상세보기

Kashimura, Takashi; Hu, Xiaolong; Nagamine, Sayako; Yoshida, Yusuke; Iuchi, Hiroaki; Nakada, Akira; Yoshizawa, Kazutaka, Non-volatile storage having oxide/nitride sidewall.
상세보기

Ingle, Nitin; Mallick, Abhijit Basu; Solis, Earl Osman; Kovarsky, Nicolay; Lyubimova, Olga, Oxygen-doping for non-carbon radical-component CVD films.
상세보기

Bhatia, Sidharth; Gee, Paul Edward; Venkataraman, Shankar, Reduced pattern loading using silicon oxide multi-layers.
상세보기

Yang, Jang-Gyoo; Miller, Matthew L.; Chen, Xinglong; Chuc, Kien N.; Liang, Qiwei; Venkataraman, Shankar; Lubomirsky, Dmitry, Semiconductor processing system and methods using capacitively coupled plasma.
상세보기

Liang, Jingmei; Chen, Xiaolin; Ingle, Nitin K.; Venkataraman, Shankar, Surface treatment and deposition for reduced outgassing.
상세보기

Bhatia, Sidharth; Hamana, Hiroshi; Gee, Paul Edward; Venkataraman, Shankar, Two silicon-containing precursors for gapfill enhancing dielectric liner.
상세보기

IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
저장형식	Text(ASCII format) Excel format PIAS분석(.xls)
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

연합인증

Methods of curing non-carbon flowable CVD films 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

이 특허에 인용된 특허 (160)

이 특허를 인용한 특허 (20)

관련 콘텐츠

특허 원문 보기

IPC 상위 출원인

이 특허와 함께 이용한 콘텐츠

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트

연합인증

Methods of curing non-carbon flowable CVD films 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

전체(0) 논문(0) 특허(0) 보고서(0)

전체(0) 논문(0) 특허(0) 보고서(0)

이 특허에 인용된 특허 (160)

이 특허를 인용한 특허 (20)

관련 콘텐츠

특허 원문 보기

IPC 상위 출원인

이 특허와 함께 이용한 콘텐츠

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트