초록 ▼

A nickel-chromium alloy etching composition comprising sulfuric acid, a source of chloride ions, including hydrochloric acid or sodium, potassium or ammonium chloride, and a sulfur compound comprising a sulfur atom with an oxidation state between −2 to +5, such as thiosulfate, sulfide, sulfite, bisu

A nickel-chromium alloy etching composition comprising sulfuric acid, a source of chloride ions, including hydrochloric acid or sodium, potassium or ammonium chloride, and a sulfur compound comprising a sulfur atom with an oxidation state between −2 to +5, such as thiosulfate, sulfide, sulfite, bisulfite, metabisulfite and phosphorus pentasulfide that can efficiently remove nickel-chromium alloy in the presence of copper circuits is disclosed.

대표청구항 ▼

1. A method of selectively etching a wiring board, wherein the printed wiring board comprises an electrically insulating base material, a metal tie coat layer and a copper layer, the method comprising immersing the flexible wiring board in an etching solution comprising: i) an acid selected from the

1. A method of selectively etching a wiring board, wherein the printed wiring board comprises an electrically insulating base material, a metal tie coat layer and a copper layer, the method comprising immersing the flexible wiring board in an etching solution comprising: i) an acid selected from the group consisting of sulfuric acid, phosphoric acid, nitric acid, sulfonic acid, sulfamic acid and combinations of one or more of the foregoing;ii) a source of halide ions; andiii) a sulfur compound comprising a sulfur atom with an oxidation state in the range of −2 to +5;for a period of time and at a temperature sufficient to remove the metal tie coat layer wherein the metal tie coat layer comprises a nickel-chromium alloy and wherein the etch solution etches less than 2 μin of copper; andwherein the addition of the sulfur compound to the etch solution increases the etching rate of the nickel-chromium alloy while creating no detrimental attack on the copper layer, wherein the concentration of the sulfur compound is between about 180 to about 500 ppm. 2. The method according to claim 1 wherein the acid comprises sulfuric acid. 3. The method according to claim 1, wherein the etching solution is maintained a temperature of between about 45 to about 50° C. 4. The method according to claim 1, wherein the flexible wiring board is contacted with the etching solution for about 30 to about 90 seconds. 5. The method according to claim 1, wherein the source of halide ions is a source of chloride ions. 6. The method according to claim 5, wherein the source of chloride ions is selected from the group consisting of hydrochloric acid, sodium chloride, potassium chloride, ammonium chloride and combinations of one or more of the foregoing. 7. The method according to claim 1, wherein the sulfur compound comprises a sulfur compound selected from the group consisting of sodium sulfide, potassium sulfide, ammonium sulfide, sodium bisulfide, potassium bisulfide, ammonium bisulfide, sodium sulfite, potassium sulfite, ammonium sulfite, sodium bisulfite, ammonium bisulfite, potassium bisulfite, sodium metabisulfite, potassium metabisulfite, ammonium metabisulfite, sodium thiosulfate, potassium thiosulfate, ammonium thiosulfate, phosphorus pentasulfide and combinations of one or more of the foregoing. 8. The method according to claim 7, wherein the sulfur compound comprises sodium thiosulfate. 9. The method according to claim 2, wherein the concentration of sulfuric acid in the etching composition is between about 200 and about 500 ml/liter of solution. 10. The method according to claim 9, wherein the concentration of sulfuric acid in the etching composition is between about 250 and about 400 ml/liter of solution. 11. The method according to claim 1, wherein the concentration of the sulfur compound is between about 190 to about 300 ppm. 12. The method according to claim 1, wherein the sulfur compound comprises sodium sulfite. 13. The method according to claim 7, wherein the sulfur compound comprises phosphorus pentasulfide. 14. The method according to claim 7, wherein the sulfur compound comprises sodium bisulfite. 15. The method according to claim 7, wherein the sulfur compound comprises sodium bisulfide.