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The embodiments disclosed herein relate to growth of magnesium-oxide on a single crystalline substrate of germanium. The embodiments further describes a method of manufacturing and crystalline structure of a FM/MgO/Ge(001) heterostructure. The embodiments further related to method of manufacturing a

The embodiments disclosed herein relate to growth of magnesium-oxide on a single crystalline substrate of germanium. The embodiments further describes a method of manufacturing and crystalline structure of a FM/MgO/Ge(001) heterostructure. The embodiments further related to method of manufacturing and a crystalline structure for a high-k dielectric//MgO 100(001)//Ge110(001) heterostructure.

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1. A method for creating a heterostructure comprising: providing a substrate having a first layer, wherein the first layer includes a substantially single crystalline germanium (Ge);placing the substrate into a molecular beam epitaxy chamber;annealing the substrate; anddepositing a second layer onto

1. A method for creating a heterostructure comprising: providing a substrate having a first layer, wherein the first layer includes a substantially single crystalline germanium (Ge);placing the substrate into a molecular beam epitaxy chamber;annealing the substrate; anddepositing a second layer onto the substrate by evaporation of a single crystal magnesium-oxide (MgO) source to form the second layer on the substrate, wherein the second layer includes a substantially single crystalline magnesium-oxide, andwherein the substantially single crystalline magnesium-oxide of the second layer (001) oriented and a unit cell of the subatantially single crystalline magnesium-oxide has a 45° in-plane rotation with respect to a unit cell of germanium(001) in the substrate. 2. The method of claim 1 wherein the first layer and the second layer substantially form an epitaxial relationship of MgO [100](001) // Ge [110](001). 3. The method of claim 1 further comprising: washing the substrate in isopropyl alcohol; andsuccessively washing the substrate in dilute NH4OH4, dilute H2SO4, and dilute H2O2. 4. The method of claim 1 wherein annealing the substrate further comprises: heating the substrate to above about 450° C. 5. The method of claim 1 wherein a deposition rate for magnesium-oxide onto the second layer is between 1 angstroms and 2 angstroms per minute. 6. The method of claim 1 wherein a deposition rate for magnesium-oxide onto the second layer is between 1.5 angstroms and 1.7 angstroms per minute. 7. The method of claim 1 further wherein depositing the second layer onto the substrate by evaporation of the single crystal magnesium-oxide (MgO) source to generate the second layer on the substrate further comprises heating the substrate to a substrate temperature of between 290° C. and about 300° C. during deposition. 8. The method of claim 1 wherein a lattice mismatch between the substantially single crystalline germanium in the first layer and the substantially single crystalline magnesium-oxide in the second layer is less than about 5.5 percent. 9. The method of claim 1 further comprising: epitaxially depositing a third layer onto the second layer, wherein the third layer includes a ferromagnetic material. 10. The method of claim 9 wherein a thermal diffusion cell of the ferromagnetic material is used to deposit the third layer. 11. The method of claim 9 wherein the ferromagnetic material is a body-centered cubic alloy CoxFe1-x. 12. The method of claim 9 further comprising: depositing a fourth layer onto the third layer, wherein the fourth layer includes aluminum. 13. The method of claim 1 further comprising: depositing a third layer onto the second layer, wherein the third layer includes a high-k dielectric material. 14. The method of claim 13 wherein depositing the third layer onto the second layer further comprises: using atomic layer deposition (ALD) to deposit the third layer onto the second layer. 15. The method of claim 13 wherein the high-k dielectric material includes at least one of HFO2, Al2O3, ZrO2, and TA2O5. 16. The method of claim 13 wherein the second layer is between 5 Å and 10 Å thick. 17. A product made by a process comprising: providing a substantially single crystalline germanium substrate;cleaning the substantially single crystalline germanium substrate;placing the substantially single crystalline germanium substrate into a molecular beam epitaxy chamber; annealing the substantially single crystalline germanium substrate;depositing a magnesium-oxide layer onto the substantially single crystalline germanium substrate by molecular beam epitaxy with a substantially single crystalline magnesium-oxide source, wherein magnesium-oxide of the magnesium-oxide layer is(001) oriented and a magnesium-oxide unit cell has a 45° in-plane rotation with respect to a unit cell of germanium (001) in the substantially single crystalline germanium substrate. 18. The product made by the process of claim 17 depositing the magnesium-oxide layer onto the substantially single crystalline germanium substrate by molecular beam epitaxy with the substantially single crystalline magnesium-oxide source further comprises: heating the substantially single crystalline germanium substrate to between 250° C. and 300° C. 19. The product made by the process of claim 17 wherein annealing the substantially single crystalline germanium substrate comprises: heating the substantially single crystalline germanium substrate to at least 450° C. 20. The product made by the process of claim 17 wherein a deposition rate for the magnesium-oxide layer is about 1.5 angstroms per minute. 21. The product made by the process of claim 17 further comprising: depositing a ferromagnetic layer onto the magnesium-oxide layer. 22. The product may by the process of claim 21 wherein a deposition rate for the ferromagnetic layer is about 1.0 angstroms per minute. 23. The product made by the process of claim 17 wherein cleaning the substantially single crystalline germanium substrate comprises successively washing the substantially single crystalline germanium substrate in dilute NH4OH4, dilute H2SO4, and dilute H2O2. 24. The product made by the process of claim 23 wherein cleaning the substantially single crystalline germanium substrate further comprises initially washing the substantially single crystalline germanium substrate with isopropyl alcohol. 25. The product made by the process of claim 17 wherein relevant surface lattice constants are a * Fe substantially equal to about 0.4055 nm, a * MgO is substantially equal to about 0.4212 nm, and a * Ge is substantially equal to about 0.3992 nm, where is substantially equal to about 0.2867 nm, is substantially equal to about 0.4212 nm, and is substantially equal to about 0.5646 nm. 26. The product may by the process of claim 17 further comprising: using atomic layer deposition (ALD) to deposit a high-k dielectric material layer on to the magnesium-oxide layer. 27. The product made by the process of claim 26 wherein the high-k dielectric material layer includes at least one of HFO2, Al2O3, ZrO2, and TA2O5. 28. The product made by the process of claim 17 where the magnesium-oxide layer is less than about 10Å thick. 29. A semiconductor wafer comprising: a substantially single crystalline germanium substrate (001);a substantially single crystalline magnesium-oxide layer (001) disposed on the substantially single crystalline germanium substrate, wherein a unit cell of the substantially single crystalline magnesium-oxide layer is rotated 45 degrees with respect to a unit cell of the substantially single crystalline germanium substrate. 30. The semiconductor wafer of claim 29 further comprising: a substantially single crystalline ferromagnetic material (FE) layer disposed onto the substantially single crystalline magnesium-oxide layer, wherein an epitaxial relationship is substantially FE [110](001)//MgO [100](001)//Ge [110](001). 31. The semiconductor wafer of claim 30 wherein the substantially single crystalline ferromagnetic material (FE) layer is composed of an alloy CoxF1-x. 32. The semiconductor wafer of claim 29 further comprising: a high-k dielectric material disposed onto the substantially single crystalline magnesium-oxide layer. 33. The semiconductor wafer of claim 32 wherein the substantially single crystalline magnesium-oxide layer is less than about 10Å thick. 34. The semiconductor wafer of claim 33, wherein the high-k dielectric material includes at least one of HFO2, Al2O3, ZrO2, and TA2O5.