초록 ▼

A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional

A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1-xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99.

대표청구항 ▼

1. A vertical cavity surface emitting laser (VCSEL) comprising: one or more In1-zGazAs quantum wells;two or more In1-xGaxP quantum well barriers bounding the one or more quantum well layers; andone or more transitional monolayers being GaP deposited between each quantum well layer and quantum well b

1. A vertical cavity surface emitting laser (VCSEL) comprising: one or more In1-zGazAs quantum wells;two or more In1-xGaxP quantum well barriers bounding the one or more quantum well layers; andone or more transitional monolayers being GaP deposited between each quantum well layer and quantum well barrier,wherein:x ranges from 0.75 to 0.50; andz ranges from 0.6 to 0.99. 2. The VCSEL of claim 1, comprising: one or more of the transitional monolayers being formed from GaP such that group III interdiffusion and/or group V interdiffusion with the quantum well barrier and/or quantum well results in one or more of the transitional monolayers having a wider band gap compared to a low band gap interface that results from group III interdiffusion and/or group V interdiffusion between the quantum well barrier and quantum well without the one or more transitional monolayers. 3. The VCSEL of claim 1, comprising: one or more transitional monolayers being InGaP or InGaAsP formed from one or more deposited interfacial monolayers of the transitional monolayers of GaP such that group III interdiffusion and/or group V interdiffusion with the quantum well barrier and/or quantum well results in one or more of the transitional monolayers having a wider band gap compared to a low band gap interface that results from group III interdiffusion and/or group V interdiffusion between the quantum well barrier and quantum well without the one or more transitional monolayers. 4. The VCSEL of claim 1, comprising one or more electrical confining layers outside the quantum well barrier layers. 5. The VCSEL of claim 4, wherein one or more electrical confining layers include AlInGaP and/or AlGaAs. 6. The VCSEL of claim 1, wherein the one or more transitional monolayers is sufficient to inhibit formation of a low gap interfacial layer between the quantum walls and quantum well barriers. 7. The VCSEL claim 1, wherein the quantum well barriers are configured to inhibit carrier wavefunction evanescence into the quantum well barriers, wherein the inhibition of evanescence is compared to the VCSEL without the quantum well transitional layers. 8. The VCSEL claim 1, wherein the one or more transitional monolayers are configured to increase differential gain of the active region, wherein the increase of differential gain is compared to the VCSEL without the one or more transitional monolayers. 9. The VCSEL of claim 1, comprising an oxide layer between the one or more quantum well barrier layers and at least one of a first conduction region and a second conduction region bounding the quantum well barrier layers, wherein the oxide layer is: a double oxide configured to reduce capacitance; orat a first null with respect to the one or more quantum wells and an associated mirror region. 10. A method for preparing a VCSEL, the VCSEL comprising: one or more In1-zGazAs quantum wells;two or more In1-xGaxP quantum well barriers bounding the one or more quantum well layers; andone or more transitional monolayers being GaP deposited between each quantum well layer and quantum well barrier, wherein:x ranges from 0.75 to 0.50; andz ranges from 0.6 to 0.99;the method comprising:using molecular beam epitaxy (MBE) for growing a crystalline structure having: the one or more quantum wells;the two or more quantum well barriers bounding each of the one or more quantum wells; andthe one or more transitional monolayers deposited between each quantum well layer and quantum well barrier. 11. The method of claim 10, comprising: forming the one or more transitional monolayers between the quantum well barrier and quantum well, the one or more transitional monolayers comprising InGaP or InGaAsP formed from one or more deposited monolayers of GaP such that group III interdiffusion and/or group V interdiffusion with the quantum well barrier and/or quantum well results in one or more transitional monolayers having a wider band gap compared to a low band gap interface that results from group III mterdiffusion and/or group V mterdiffusion between the quantum well barrier and quantum well without the one or more transitional monolayers. 12. The method of claim 10, comprising: forming one or more electrical confining layers outside the quantum well barrier layers, the one or more electrical confining layers including AlInGaP and/or AlGaAs. 13. A method for preparing a vertical cavity surface emitting laser (VCSEL), the VCSEL comprising: one or more In1-zGazAs quantum wells;two or more In1-xGaxP quantum well bounding the one or quantum well layers; andone or more transitional monolayers being GaP deposited between each quantum well layer and quantum well barrier,wherein:x ranges from 0.75 to 0.50; andz ranges from 0.6 to 0.99;the method comprising:using MBE for:growing a first mirror region over a substrate, the first mirror region having a plurality of first mirror layers having one or more indices of refraction;growing a first conduction region over the first mirror region;growing an active region over the first conduction region opposite of the first mirror region, the growth of the active region comprising: (a) growing the quantum well barrier;(b) growing the transitional layer;(c) growing the quantum well layer;(d) growing another transitional layer;(e) repeating processes (a) through (d) over a plurality of cycles; and(f) growing the quantum well barrier;growing a second conduction region over the active region opposite of the first conduction region; andgrowing a second mirror region over the second conduction region, the second mirror region having a plurality of second mirror layers having one or more indices of refraction.