초록 ▼

The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane or

The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation; a diamond-like shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond-like shape structure has at least one surface of a second crystal plane orientation; a gate structure disposed over the diamond-like shape structure, wherein the gate structure separates a source region and a drain region; and a channel region defined in the diamond-like shape structure between the source and drain regions.

대표청구항 ▼

1. A FinFET device comprising: a semiconductor substrate of a first semiconductor material;a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation and a sidewall surface of a third cry

1. A FinFET device comprising: a semiconductor substrate of a first semiconductor material;a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation and a sidewall surface of a third crystal plane orientation;a diamond shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond shape structure has a first surface of a second crystal plane orientation and a second surface of the second crystal plane orientation, wherein the first surface of the second crystal plane orientation and the second surface of the second crystal plane orientation intersect each other, wherein the fin structure extends into the diamond shaped structure and the fin structure is without any surface having the second crystal plane orientation wherein the diamond shape structure physically contacts the top surface and the sidewall surface of the fin structure;a gate structure disposed over the diamond shape structure, wherein the gate structure separates a source region and a drain region; anda channel region defined in the diamond shape structure between the source and drain regions. 2. The FinFET device of claim 1, wherein the first crystal plane orientation is a (100) crystal plane orientation and the second crystal plane orientation is a (111) crystal plane orientation. 3. The FinFET device of claim 1, wherein the first semiconductor material is silicon. 4. The FinFET device of claim 1, wherein the second semiconductor material is germanium. 5. The FinFET device of claim 1, wherein the diamond shape structure has a third surface having the second crystal plane orientation, the second crystal plane orientation being a (111) crystallographic orientation. 6. The FinFET device of claim 1, wherein the diamond shape structure has a third surface and a fourth surface, wherein the third and fourth surfaces have the second crystal plane orientation, the second crystal plane orientation being a (111) crystallographic orientation. 7. The FinFET device of claim 1, wherein the gate structure includes a dielectric layer disposed over the diamond shape structure, wherein the dielectric layer includes GeO2. 8. The FinFET device of claim 1, wherein the gate structure includes a gate dielectric layer disposed over the diamond-like shape structure, wherein the gate dielectric layer includes a GeO2 layer and a Y2O3 layer. 9. The FinFET device of claim 8, wherein the gate structure includes a gate electrode disposed over the gate dielectric layer. 10. The FinFET device of claim 9, wherein the gate electrode material includes one of a polysilicon material and an aluminum material. 11. The FinFET device of claim 1, wherein the source region and drain region include an epitaxial layer of silicon. 12. A FinFET device comprising: a semiconductor substrate of a first semiconductor material;a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation and a sidewall surface of a third crystal plane orientation;a diamond shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond shape structure has a first surface of a second crystal plane orientation and second surface of the second crystal plane orientation, wherein the first surface of the second crystal plane orientation and the second surface of the second crystal plane orientation intersect each other at an apex of the diamond shape structure, the apex of the diamond shape structure being positioned further away from the semiconductor substrate than any other portion of the diamond structure, wherein the fin structure is embedded within the diamond shape structure and does not include any surface having the second crystal plane orientation, wherein the diamond shape structure physically contacts the top surface and the sidewall surface of the fin structure;a gate structure disposed over the diamond shape structure, wherein the gate structure separates a source region and a drain region; anda channel region defined in the diamond shape structure between the source and drain regions. 13. The FinFET device of claim 12, wherein the diamond shape structure further includes a third surface of the second crystal plane orientation and a fourth surface of the second crystal plane orientation, wherein the third surface of the second crystal plane orientation intersects the first surface of the second crystal plane orientation at a first intersection point. 14. The FinFET device of claim 13, wherein the fourth surface of the second crystal plane orientation intersects the second surface of the second crystal plane orientation at a second intersection point. 15. The FinFET device of claim 14, wherein the first surface of the second crystal plane orientation has a first length that extends from the apex of the diamond shape structure to the first intersection point and the second surface of the second crystal plane orientation has a second length that extends from the apex of the diamond shape structure to the second intersection point, wherein the first and second length are substantially equal. 16. The FinFET device of claim 13, wherein the first intersection point is disposed above a topmost surface of an isolation featured through which the fin structure extends therethrough. 17. A FinFET device comprising: a semiconductor substrate of a first semiconductor material;a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation;a diamond shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond shape structure has a first surface of a second crystal plane orientation, wherein the fin structure extends into a portion of the diamond shaped structure and the fin structure is without any surface having the second crystal plane orientation, wherein a topmost surface of the fin structure is positioned above a bottommost surface of the diamond shape structure, the topmost surface of the fin structure being positioned further away from the semiconductor substrate than any other surface of the fin structure and the bottommost surface of the diamond shape structure being positioned closer to the semiconductor substrate than any other surface of the diamond shape structure;a gate structure disposed over the diamond shape structure, wherein the gate structure separates a source region and a drain region; anda channel region defined in the diamond shape structure between the source and drain regions. 18. The FinFET device of claim 17, wherein the first crystal plane orientation is a (100) crystal plane orientation and the second crystal plane orientation is a (111) crystal plane orientation. 19. The FinFET device of claim 12, wherein the fin structure embedded in the diamond shape structure has a rectangular shape, and wherein the diamond shape structure physically contacts the opposing sidewall surfaces of the rectangular shaped fin structure. 20. The FinFET device of claim 1, wherein a topmost surface of the fin structure is positioned above a bottommost surface of the diamond shape structure, the topmost surface of the fin structure being positioned further away from the semiconductor substrate than any other surface of the fin structure and the bottommost surface of the diamond shape structure being positioned closer to the semiconductor substrate than any other surface of the diamond shape structure.