초록 ▼

Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-c

Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure.

대표청구항 ▼

1. A method, comprising: forming a flowable dielectric film on a substrate, wherein the flowable dielectric film has a first wet etch rate;performing one or more integration processes on the substrate; andafter performing the one or more integration processes, modifying the wet etch rate of the flow

1. A method, comprising: forming a flowable dielectric film on a substrate, wherein the flowable dielectric film has a first wet etch rate;performing one or more integration processes on the substrate; andafter performing the one or more integration processes, modifying the wet etch rate of the flowable dielectric film wherein the modified wet etch rate is higher than the first wet etch rate. 2. The method of claim 1, wherein the flowable dielectric film is a silicon oxide, a silicon nitride, a silicon oxynitride, silicon carbide, or a silicon oxycarbide film. 3. The method of claim 1, wherein the flowable dielectric film is a carbon-doped oxide, a boron-doped oxide, a phosphorous-doped oxide, or a nitrogen-doped oxide. 4. The method of claim 1, wherein modifying the first wet etch rate comprises exposing the flowable dielectric film to ultraviolet radiation. 5. The method of claim 1, further comprising treating the flowable dielectric film by exposing the flowable dielectric film to species from an in situ or remote plasma and wherein treating the flowable film chemically and/or physically modifies the flowable dielectric film. 6. The method of claim 1, wherein the one or more integration processes include at least one of an etch process, a deposition process, a planarization process, a photoresist strip process, a wet clean process, and a lithographic patterning process. 7. The method of claim 1, wherein forming a flowable dielectric film on the substrate comprises depositing a flowable dielectric film and densifying the deposited film. 8. The method of claim 1, comprising physically densifying the flowable film prior to performing the one or more integration process and chemically modifying the flowable film after performing the one or more integration processes. 9. A method comprising: depositing a flowable dielectric film on a substrate; anddensifying the flowable dielectric film, wherein the densified flowable dielectric film has a first wet etch rate, wherein said first wet etch rate is tunable such that it can be changed by a factor of at least 10, wherein the first wet etch rate is about zero in one or more of dilute HF in H2O, buffered oxide etch (BOE), NH4OH:H2O2:H2O solution, H2SO4:H2O2:H2O solution, phosphoric acid solutions, and tetramethylammonium hydroxide (TMAH). 10. The method of claim 9, wherein the carbon concentration of the densified flowable dielectric film is less than about 5% atomic. 11. The method of claim 9, wherein the carbon concentration of the densified flowable dielectric film is between 5 and 35% atomic. 12. The method of claim 9, wherein depositing a flowable dielectric film on a substrate comprises exposing the substrate to a carbon-doped precursor. 13. The method of claim 9, wherein depositing the flowable dielectric film on the substrate comprises reacting a non-hydroxyl-forming oxidant with a silicon-containing precursor. 14. The method of claim 13, wherein depositing the silicon-containing precursor is an alkoxy compound. 15. A method comprising: after performing one or more integration operations including at least one of a lithography process, an ion implantation process, a photoresist strip process, a wet etch process, and a dry etch process, on a substrate including a flowable dielectric film, treating the flowable dielectric film to modify a wet etch rate of the flowable dielectric film, wherein treating the flowable film increases the wet etch rate such that the modified wet etch rate is higher than the wet etch rate of the film prior to treatment. 16. The method of claim 15, wherein treating the flowable dielectric film comprises removing at least one of carbon, nitrogen or hydrogen from the flowable dielectric film. 17. The method of claim 15, wherein treating the flowable dielectric film comprises adding at least one of carbon, nitrogen, or hydrogen to the flowable dielectric film. 18. The method of claim 15, wherein treating the flowable dielectric film comprises exposing it to reactive oxygen species from a direct or remote plasma. 19. The method of claim 15, wherein treating the flowable dielectric film comprises exposing it to reactive hydrogen species from a direct or remote plasma. 20. The method of claim 15, wherein treating the flowable dielectric film comprises exposing it to reactive nitrogen species from a direct or remote plasma. 21. The method of claim 15, wherein treating the flowable dielectric film comprises exposing it to ultraviolet radiation. 22. The method of claim 15, wherein the integration operations include a lithography process.