CMP compositions selective for oxide and nitride with high removal rate and low defectivity
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C09K-013/00
C09G-001/02
B24B-037/04
출원번호
US-0898842
(2013-05-21)
등록번호
US-8906252
(2014-12-09)
발명자
/ 주소
Dockery, Kevin P.
Jia, Renhe
Dysard, Jeffrey
출원인 / 주소
Cabot Microelelctronics Corporation
대리인 / 주소
Omholt, Thomas E
인용정보
피인용 횟수 :
1인용 특허 :
13
초록▼
The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention furt
The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
대표청구항▼
1. A chemical-mechanical polishing composition comprising: (a) a ceria abrasive,(b) an ionic polymer of formula I: wherein X1 and X2 are independently selected from hydrogen, —OH, and —COOH and wherein at least one of X1 and X2 is —COOH,Z1 and Z2 are independently O or S,R1, R2, R3, and R4 are indep
1. A chemical-mechanical polishing composition comprising: (a) a ceria abrasive,(b) an ionic polymer of formula I: wherein X1 and X2 are independently selected from hydrogen, —OH, and —COOH and wherein at least one of X1 and X2 is —COOH,Z1 and Z2 are independently O or S,R1, R2, R3, and R4 are independently selected from hydrogen, C1-C6 alkyl, and C7-C10 aryl, andn is an integer of about 3 to about 500, and(c) water, wherein the polishing composition has a pH of about 1 to about 4.5. 2. The polishing composition of claim 1, wherein X1 and X2 are both —COOH. 3. The polishing composition of claim 2, wherein Z1 and Z2 are both O, and R1, R2, R3, and R4 are hydrogen. 4. The polishing composition of claim 1, wherein the ionic polymer has a molecular weight of about 500 daltons to about 10,000 daltons, and wherein n is an integer with a value of 8 or greater. 5. The polishing composition of claim 1, wherein the ionic polymer is present in an amount of about 0.01 wt. % to about 0.5 wt. % of the polishing composition. 6. The polishing composition of claim 1, wherein the ceria abrasive is a wet-process ceria abrasive. 7. The polishing composition of claim 6, wherein the wet-process ceria abrasive is present in an amount of about 0.05 wt. % to about 1 wt. % of the polishing composition. 8. The polishing composition of claim 1, wherein the polishing composition further comprises a polyvinyl alcohol. 9. The polishing composition of claim 8, wherein the polyvinyl alcohol has a molecular weight of about 20,000 daltons to about 200,000 daltons. 10. The polishing composition of claim 8, wherein the polyvinyl alcohol is a branched polyvinyl alcohol. 11. A method of chemically-mechanically polishing a substrate comprising: (i) contacting a substrate with a polishing pad and a chemical-mechanical polishing composition comprising:(a) a ceria abrasive,(b) an ionic polymer of formula I: wherein X1 and X2 are independently selected from hydrogen, —OH, and —COOH,Z1 and Z2 are independently O or S,R1, R2, R3, and R4 are independently selected from hydrogen, C1-C6 alkyl, and C7-C10 aryl, andn is an integer of about 3 to about 500, and(c) water,wherein the polishing composition has a pH of about 1 to about 4.5,(ii) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate, and(iii) abrading at least a portion of the substrate to polish the substrate. 12. The method of claim 11, wherein X1 and X2 are both —COOH. 13. The method of claim 12, wherein Z1 and Z2 are both O, and R1, R2, R3, and R4 are hydrogen. 14. The method of claim 11, wherein the ionic polymer has a molecular weight of about 500 daltons to about 10,000 daltons, and wherein n is an integer with a value of 8 or greater. 15. The method of claim 11, wherein the ionic polymer is present in an amount of about 0.01 wt. % to about 0.5 wt. % of the polishing composition. 16. The method of claim 11, wherein the ceria abrasive is a wet-process ceria abrasive. 17. The method of claim 16, wherein the wet-process ceria abrasive is present in an amount of about 0.1 wt. % to about 1 wt. % of the polishing composition. 18. The method of claim 11, wherein the polishing composition further comprises a polyvinyl alcohol. 19. The method of claim 18, wherein the polyvinyl alcohol has a molecular weight of about 20,000 daltons to about 200,000 daltons. 20. The method of claim 18, wherein the polyvinyl alcohol is a branched polyvinyl alcohol. 21. The method of claim 11, wherein the substrate comprises silicon oxide, and wherein at least a portion of the silicon oxide is abraded to polish the substrate. 22. The method of claim 21, wherein the substrate further comprises silicon nitride, and wherein at least a portion of the silicon nitride is abraded to polish the substrate. 23. The method of claim 21, wherein the substrate further comprises polysilicon, and wherein at least a portion of the polysilicon is abraded to polish the substrate.
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이 특허에 인용된 특허 (13)
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