$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

CMP compositions selective for oxide and nitride with high removal rate and low defectivity 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/3063
  • H01L-021/306
  • C09K-003/14
  • H01L-021/3105
  • C09G-001/02
출원번호 US-0799680 (2013-03-13)
등록번호 US-8916061 (2014-12-23)
발명자 / 주소
  • Reiss, Brian
  • Willhoff, Michael
  • Mateja, Daniel
출원인 / 주소
  • Cabot Microelectronics Corporation
대리인 / 주소
    Omholt, Thomas E
인용정보 피인용 횟수 : 0  인용 특허 : 27

초록

The invention relates to a chemical-mechanical polishing composition comprising a ceria abrasive, cations of one or more lanthanide metals, one or more nonionic polymers, water, and optionally one or more additives. The invention further relates to a method of chemically-mechanically polishing a sub

대표청구항

1. A chemical-mechanical polishing composition comprising: (a) a ceria abrasive,(b) cations of one or more lanthanide metals,(c) one or more nonionic polymers selected from the group consisting of alkylene oxide, containing polymers, acrylamide polymers, and mixtures thereof,(d) one or more phosphin

이 특허에 인용된 특허 (27)

  1. Birang Manoocher ; Pyatigorsky Grigory, Apparatus and method for in-situ monitoring of chemical mechanical polishing operations.
  2. Haruki Nojo JP; Sumit Pandey ; Jeremy Stephens ; Ravikumar Ramachandran, Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing.
  3. Braconnier,Jean Jacques, Cerium phosphate and/or lanthanum sol preparation method and use for polishing.
  4. Neville Matthew (Champaign IL) Fluck David J. (Pesotum IL) Hung Cheng-Hung (Champaign IL) Lucarelli Michael A. (Mattoon IL) Scherber Debra L. (Orangevale CA), Chemical mechanical polishing slurry for metal layers.
  5. Birang Manoocher ; Gleason Allan ; Guthrie William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.
  6. Lustig Naftali E. (Croton-on-Hudson NY) Saenger Katherine L. (Ossining NY) Tong Ho-Ming (Yorktown Heights NY), In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing.
  7. Tang Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical po.
  8. Sandhu Gurtej S. (Boise) Doan Trung T. (Boise ID), Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image o.
  9. Cho, Jun-Yeon; Choi, Sang-Soon; Cho, Seung-Beom, Method for preparing cerium carbonate and cerium oxide.
  10. Nho, Jun-Seok; Oh, Myoung-Hwan; Cho, Seung-Beom; Kim, Jong-Pil; Kim, Jang-Yul, Method for preparing cerium oxide powder using organic solvent and CMP slurry comprising the same.
  11. Bruxvoort Wesley J. ; Culler Scott R. ; Ho Kwok-Lun ; Kaisaki David A. ; Kessel Carl R. ; Klun Thomas P. ; Kranz Heather K. ; Messner Robert P. ; Webb Richard J. ; Williams Julia P., Method of modifying an exposed surface of a semiconductor wafer.
  12. Holzapfel Paul ; Schlueter James ; Karlsrud Chris ; Lin Warren, Methods and apparatus for detecting removal of thin film layers during planarization.
  13. Gundu M. Sabde, Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies.
  14. Hiyama Hirokuni,JPX ; Wada Yutaka,JPX, Polishing apparatus including thickness or flatness detector.
  15. Takeuchi Yoshiaki (Ehime JPX) Yamamoto Koji (Ehime JPX) Umezaki Hiroshi (Ehime JPX), Polishing composition for metallic material.
  16. Moriyama Shigeo (Tama JPX) Kawamura Yoshio (Kokubunji JPX) Homma Yoshio (Hinode-machi JPX) Kusukawa Kikuo (Fujino-machi JPX) Furusawa Takeshi (Hachioji JPX), Polishing method.
  17. Katakabe Ichiro (Kanagawa-ken JPX) Miyashita Naoto (Kanagawa-ken JPX) Akiyama Tatsuo (Tokyo JPX), Polishing method and apparatus for detecting a polishing end point of a semiconductor wafer.
  18. Anjur Sriram P. ; Downing William C., Polishing pad for a semiconductor substrate.
  19. Sevilla Roland K. ; Kaufman Frank B. ; Anjur Sriram P., Polishing pad for a semiconductor substrate.
  20. Cook Lee M. (Steelville PA) Roberts John V. H. (Newark DE) Jenkins Charles W. (Newark DE) Pillai Raj R. (Newark DE), Polishing pads and methods for their use.
  21. Sevilla Roland K. ; Kaufman Frank B. ; Anjur Sriram P., Polishing pads for a semiconductor substrate.
  22. Anthony, Olivier; Gerardin, Corine; Cadena, Nathalie; Labeau, Marie-Pierre, Preparation of particles by hydrolysis of a metal cation in the presence of a polymer.
  23. Chhabra, Vishal; Fitzsimmons, John A.; Khojasteh, Mahmoud; Muncy, Jennifer, Process for cleaning semiconductor devices and/or tooling during manufacturing thereof.
  24. Park, Young-rae; Kim, Jung-yup; Yoon, Bo-un; Kim, Kwang-bok; Boo, Jae-phil; Lee, Jong-won; Hah, Sang-rok; Kim, Kyung-hyun; Hong, Chang-ki, Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same.
  25. Srinivasan, Ramanathan; Babu, Suryadevara V.; America, William G.; Her, Yie-Shein, Slurry for chemical mechanical polishing silicon dioxide.
  26. Sandhu Gurtej S. (Boise ID) Doan Trung Tri (Boise ID), System for real-time control of semiconductor wafer polishing including optical monitoring.
  27. Sandhu Gurtej S. ; Doan Trung Tri, System for real-time control of semiconductor wafer polishing including optical montoring.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로