A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI
A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.
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1. A dry etching method for selectively etching a silicon material, the dry etching method comprising: generating a plasma gas from a dry etching agent; andetching the silicon material by the generated plasma gas,wherein the dry etching agent comprises 1,3,3,3-tetrafluoropropene, an additive gas and
1. A dry etching method for selectively etching a silicon material, the dry etching method comprising: generating a plasma gas from a dry etching agent; andetching the silicon material by the generated plasma gas,wherein the dry etching agent comprises 1,3,3,3-tetrafluoropropene, an additive gas and an inert gas; andwherein the silicon material is at least one kind selected from the group consisting of silicon dioxide, silicon nitride, polycrystalline, silicon, amorphous silicon and silicon carbide. 2. The dry etching method according to claim 1, wherein the additive gas is an oxidizing gas or reducing gas. 3. The dry etching method according to claim 2, wherein the oxidizing gas or reducing gas is at least one kind of gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7). 4. The dry etching method according to claim 1, wherein the inert gas is at least one kind of gas selected from the group consisting of N2, He, Ar, Ne and Kr. 5. The dry etching method according to claim 1, wherein the 1,3,3,3-tetrafluoropropene is contained in an amount of 1 to 45 volume %. 6. The dry etching method according to claim 1, further comprising at least one kind of gas selected from the group consisting of CF4, CF3H, CF2H2, CFH3, C2F6, C2F4H2, C2F5H, C3F8, C3F7H, C3F6H2, C3F5H3, C3F4H4, C3F4H2, C3F3H5, C3F5H, C3F3H, C4F8, C4F6, C5F8 and C5F10. 7. The dry etching method according to claim 1, wherein the dry etching agent contains at least one kind of oxidizing gas selected from the group consisting of H2, O2, CO and COF2 as the additive gas and Ar as the inert gas; and wherein the 1,3,3,3-tetrafluoropropene, the additive gas and the inert gas are fed at a volumetric flow rate ratio of 1,3,3,3-tetrafluoropropene:additive gas:inert gas=1 to 45%:1 to 50%:5 to 98% (where the sum of the percentages of the respective gases is 100%). 8. A dry etching agent comprising 1,3,3,3-tetrafluoropropene, an additive gas and an inert gas, wherein the dry etching is for use in selectively etching of a silicon material;wherein the additive gas is at least one kind of oxidizing or reducing gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7);wherein the inert gas is at least one kind of gas selected from the group consisting of N2, He, Ar, Ne and Kr; andwherein the 1,3,3,3-tetrafluoropropene is contained in an amount of 1 to 45 volume %. 9. The dry etching agent according to claim 8, further comprising at least one kind of gas selected from the group consisting of CF4, CF3H, CF2H2, CFH3, C2F6, C2F4H2, C2F5H, C3F8, C3F7H, C3F6H2, C3F5H3, C3F4H4, C3F4H2, C3F3H5, C3F5H, C3F3H, C4F8, C4F6, C5F8 and C5F10. 10. The dry etching agent according to claim 8, wherein the 1,3,3,3-tetrafluoropropene, the additive gas and the inert gas are at a volumetric flow rate ratio of 1,3,3,3-tetrafluoropropene:additive gas:inert gas=1 to 45%:1 to 50%:5 to 98% (where the sum of the percentages of the respective gases is 100%). 11. A dry etching agent consisting essentially of: 1 to 45 volume % of 1,3,3,3-tetrafluoropropene;at least one kind of oxidizing or reducing gas selected, as an additive gas, from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); andat least one kind of inert gas selected from the group consisting of N2, He, Ar, Ne and Kr. 12. A dry etching method for selectively etching at least one kind of silicon material selected from the group consisting of silicon dioxide, silicon nitride, polycrystalline silicon, amorphous silicon and silicon carbide by generation of a plasma gas from the dry etching agent according to claim 11. 13. The dry etching method according to claim 12, wherein the dry etching agent contains at least one kind of oxidizing gas selected from the group consisting of H2, O2, CO and COF2 as the additive gas and Ar as the inert gas; andwherein the 1,3,3,3-tetrafluoropropene, the additive gas and the inert gas are fed at a volumetric flow rate ratio of 1,3,3,3-tetrafluoropropene:additive gas:inert gas=1 to 45%:1 to 50%:5 to 98% (where the sum of the percentages of the respective gases is 100%). 14. A dry etching agent consisting essentially of: 1 to 45 volume % of 1,3,3,3-tetrafluoropropene;at least one kind of oxidizing or reducing gas selected, as an additive gas, from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7);at least one kind of inert gas selected from the group consisting of N2, He, Ar, Ne and Kr; andat least one kind of gas selected from the group consisting of CF4, CF3H, CF2H2, CFH3, C2F6, C2F4H2, C2F5H, C3F8, C3F7H, C3F6H2, C3F5H3, C3F4H4, C3F4H2, C3F3H5, C3F5H, C3F3H, C4F8, C4F6, C5F8 and C5F10. 15. A dry etching method for selectively etching at least one kind of silicon material selected from the group consisting of silicon dioxide, silicon nitride, polycrystalline silicon, amorphous silicon and silicon carbide by generation of a plasma gas from the dry etching agent according to claim 14. 16. The dry etching method according to claim 15, wherein the dry etching agent contains at least one kind of oxidizing gas selected from the group consisting of H2, O2, CO and COF2 as the additive gas and Ar as the inert gas; andwherein the 1,3,3,3-tetrafluoropropene, the additive gas and the inert gas are fed at a volumetric flow rate ratio of 1,3,3,3-tetrafluoropropene:additive gas:inert gas=1 to 45%:1 to 50%:5 to 98% (where the sum of the percentages of the respective gases is 100%). 17. A dry etching agent consisting essentially of: 1,3,3,3-tetrafluoropropeneat least one kind of oxidizing or reducing gas selected, as an additive gas, selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, C12, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); andat least one kind of inert gas selected from the group consisting of N2, He, Ar, Ne and Kr,wherein the 1,3,3,3-tetrafluoropropene, the additive gas and the inert gas are at a volumetric flow rate ratio of 1,3,3,3-tetrafluoropropene:additive gas:inert gas=1 to 45%:1 to 50%:5 to 98% (where the sum of the percentages of the respective gases is 100%). 18. A dry etching method for selectively etching at least one kind of silicon material selected from the group consisting of silicon dioxide, silicon nitride, polycrystalline silicon, amorphous silicon and silicon carbide by generation of a plasma gas from the dry etching agent according to claim 17. 19. A dry etching agent consisting essentially of: 1,3,3,3-tetrafluoropropeneat least one kind of oxidizing reducing gas selected, as an additive gas, selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7);at least one kind of inert gas selected from the group consisting of N2, He, Ar, Ne and Kr; andat least one kind of gas selected from the group consisting of CF4, CF3H, CF2H2, CFH3, C2F6, C2F4H2, C2F5H, C3F8, C3F7H, C3F6H2, C3F5H3, C3F4H4, C3F4H2, C3F3H5, C3F5H, C3F3H, C4F8, C4F6, C5F8 and C5F10,wherein the 1,3,3,3-tetrafluoropropene, the additive gas and the inert gas are fed at a volumetric flow rate ratio of 1,3,3,3-tetrafluoropropene:additive gas:inert gas=1 to 45%:1 to 50%:5 to 98% (where the sum of the percentages of the respective gases is 100%). 20. A dry etching method for selectively etching at least one kind of silicon material selected from the group consisting of silicon dioxide, silicon nitride, polycrystalline silicon, amorphous silicon and silicon carbide by generation of a plasma gas from the dry etching agent according to claim 19.
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이 특허에 인용된 특허 (9)
Hulse, Ryan; Pham, Hang T.; Singh, Rajiv Ratna; Merkel, Daniel C; Pokrovski, Konstantin A.; Tung, Hsueh Sung, 1,3,3,3-tetrafluoropropene process azeotropes with HF.
Hoiman Hung ; Joseph P Caulfield ; Hongqing Shan ; Ruiping Wang ; Gerald Zheyao Yin, Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window.
Kesari, Susrut; Behr, Fred E.; Costello, Michael G.; Flynn, Richard M.; Minday, Richard M.; Owens, John G.; Vitcak, Daniel R.; Zazzera, Larry A., Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases.
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