초록 ▼

A head and a method to manufacture a head are disclosed. A slider is provided and has a mounting face that is opposite but substantially parallel to its air bearing surface. According to an example embodiment, a first plurality of layers may be deposited on the mounting face, including a tin layer,

A head and a method to manufacture a head are disclosed. A slider is provided and has a mounting face that is opposite but substantially parallel to its air bearing surface. According to an example embodiment, a first plurality of layers may be deposited on the mounting face, including a tin layer, a first underlayer that comprises platinum, and an interface layer disposed between the first underlayer and the tin layer. The interface layer may comprise Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, or W. A submount with an attached laser diode may include a gold layer and be positioned adjacent to the first plurality of layers. The tin layer may then be melted so that the gold layer is dissolved therein, upon solidification attaching the submount to the mounting face by a solder layer that preferably comprises at least 45% gold by weight dissolved in tin.

대표청구항 ▼

1. A head comprising: a slider having an air bearing surface, a trailing face that is normal to the air bearing surface, and a mounting face that is opposite but substantially parallel to the air bearing surface;a magnetic transducer disposed on the trailing face of the slider; anda submount attache

1. A head comprising: a slider having an air bearing surface, a trailing face that is normal to the air bearing surface, and a mounting face that is opposite but substantially parallel to the air bearing surface;a magnetic transducer disposed on the trailing face of the slider; anda submount attached to the mounting face by a first solder layer, the first solder layer comprising an alloy of at least 45% gold by weight dissolved in tin;a laser diode attached to the submount,wherein the mounting face of the slider includes a first underlayer that comprises platinum, and an interface layer disposed between and in direct contact with the first underlayer and the first solder layer, the interface layer comprising a metal selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, and W. 2. The head of claim 1, wherein the submount includes a second underlayer that comprises platinum, the second underlayer disposed between the submount and the first solder layer. 3. The head of claim 1, wherein the first solder layer includes a region of AuSn composition adjacent to and in contact with the second underlayer of the submount, and a region of AuSn2 composition adjacent to and in contact with the interface layer of the mounting face of the slider. 4. The head of claim 1, wherein the mounting face of the slider further comprises a first metal adhesion layer between and in contact with the first underlayer and the mounting face of the slider, the first metal adhesion layer comprising Ti. 5. The head of claim 2, wherein the submount further comprises a second metal adhesion layer between and in contact with the second underlayer and the submount, the second metal adhesion layer comprising a metal selected from the group consisting of Ti, Cr, Nb, Ta, Ni, and W. 6. The head of claim 1, wherein the interface layer defines an interface layer thickness in the range of 5 nm to 20 nm, and the first underlayer defines a first underlayer thickness in the range of 50 nm to 250 nm. 7. The head of claim 1, wherein the laser diode is attached to the submount by a second solder layer that comprises 80Au20Sn. 8. The head of claim 1, wherein the first solder layer defines a solder layer thickness in the range 1 micron to 3 microns. 9. A method to manufacture a head, the method comprising: providing a slider having an air bearing surface, a trailing face that is normal to the air bearing surface, and a mounting face that is opposite but substantially parallel to the air bearing surface;depositing a first plurality of layers on the mounting face of the slider, the first plurality of layers including a tin layer, a first underlayer that comprises platinum, and an interface layer disposed between the first underlayer and the tin layer, the interface layer comprising a metal selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, and W;positioning a laser submount adjacent to the first plurality of layers; and then heating the first plurality of layers to melt the tin layer. 10. The method of claim 9, wherein the slider comprises AlTiC, and wherein the first plurality of layers further includes a first metal adhesion layer between and in contact with the mounting face of the AlTiC slider and the first underlayer, the first metal adhesion layer comprising titanium. 11. The method of claim 9, wherein the first plurality of layers further includes a platinum capping layer in direct contact with the tin layer, the tin layer disposed between the platinum capping layer and the interface layer, the platinum capping layer defining a capping layer thickness in the range of 5 nm to 20 nm. 12. The method of claim 9, wherein the tin layer defines a tin layer thickness in the range of 1.5 to 3.5 microns, the interface layer defines an interface layer thickness in the range of 5 nm to 20 nm, and the first underlayer defines a first underlayer thickness in the range of 50 nm to 250 nm. 13. The method of claim 9, further comprising depositing a second plurality of layers on the laser submount before positioning the laser submount adjacent to the first plurality of layers, the second plurality of layers including a first gold layer and a second underlayer that comprises platinum. 14. The method of claim 13, wherein the tin layer defines a tin layer thickness, and wherein the first gold layer defines a first gold layer thickness that is at least 0.31 times the tin layer thickness. 15. The method of claim 14, wherein the first gold layer thickness is in the range of 0.5 to 1 micron, and the second underlayer defines a second underlayer thickness in the range of 100 nm to 300 nm. 16. The method of claim 13, wherein the second plurality of layers further includes a second metal adhesion layer between and in contact with the laser submount and the second underlayer, the second metal adhesion layer comprising a metal selected from the group consisting of Ti, Cr, Nb, Ta, Ni, and W. 17. The method of claim 13, wherein heating the first plurality of layers to melt the tin layer dissolves the first gold layer into the tin layer to form a solder layer of gold tin alloy that has at least 45% gold by weight. 18. The method of claim 17, wherein the solder layer includes a region of AuSn composition adjacent to and in contact with the second underlayer, and a region of AuSn2 composition adjacent to and in contact with the interface layer. 19. The method of claim 17, wherein the first plurality of layers further includes a second gold layer, and wherein heating the first plurality of layers to melt the tin layer also dissolves the second gold layer into the tin layer to form the solder layer of gold tin alloy that has at least 45% gold by weight. 20. The method of claim 19, wherein the tin layer defines a tin layer thickness, wherein the first gold layer defines a first gold layer thickness, wherein the second gold layer defines a second gold layer thickness, and wherein a sum of the first gold layer thickness and the second gold layer thickness is at least 0.31 times the tin layer thickness. 21. The method of claim 20, wherein the second gold layer is disposed between the tin layer and the interface layer, and defines a second gold layer thickness in the range of 50 to 200 nm. 22. The method of claim 20, wherein the first plurality of layers further includes a platinum capping layer in direct contact with the tin layer, the tin layer being disposed between the platinum capping layer and the interface layer, the platinum capping layer defining a capping layer thickness in the range of 5 nm to 20 nm, and wherein the second gold layer is disposed on the platinum capping layer and defines a second gold layer thickness in the range of 20 nm to 80 nm. 23. The method of claim 9, further comprising attaching a laser diode to the laser submount by a solder material that comprises 80Au20Sn, before positioning the laser submount adjacent to the first plurality of layers. 24. The method of claim 13, wherein positioning the laser submount adjacent to the first plurality of layers comprises pressing the second plurality of layers against the first plurality of layers.