[특허]Photoresist defect reduction system and method

[미국특허] Photoresist defect reduction system and method 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G03F-007/42 G03F-007/40
출원번호	US-0697252 (2015-04-27)
등록번호	US-9239520 (2016-01-19)
발명자 / 주소	Wang, Wen-Yun Chang, Ching-Yu
출원인 / 주소	Taiwan Semiconductor Manufacturing Company, Ltd.
대리인 / 주소	Slater & Matsil, L.L.P.
인용정보	피인용 횟수 : 0 인용 특허 : 78

초록 ▼

A system and method for reducing defects in photoresist processing is provided. An embodiment comprises cleaning the photoresist after development using an alkaline environment. The alkaline environment may comprise a neutral solvent and an alkaline developer. The alkaline environment will modify the attraction between residue leftover from development and a surface of the photoresist such that the surfaces repel each other, making the removal of the residue easier. By removing more residue, there will be fewer defects in the photolithographic process.

대표청구항 ▼

1. A method of manufacturing a semiconductor device, the method comprising: developing a photoresist over a substrate, wherein after the developing the photoresist a surface of the photoresist is hydrogen bonded to residue; andremoving the hydrogen bonding by applying an alkaline environment to the surface of the photoresist. 2. The method of claim 1, wherein the applying the alkaline environment further comprises applying a neutral solvent and an alkaline chemical. 3. The method of claim 2, wherein the neutral solvent has carbon dioxide dissolved within it. 4. The method of claim 2, wherein the neutral solvent and the alkaline chemical are applied separately. 5. The method of claim 2, wherein the neutral solvent and the alkaline chemical are mixed prior to the applying the alkaline environment. 6. The method of claim 2, wherein the alkaline environment further comprises a cleaning surfactant. 7. The method of claim 6, wherein the applying the alkaline environment further comprises applying a cleaning additive. 8. The method of claim 2, wherein the alkaline chemical comprises guanidinium, sodium hydroxide, or calcium hydroxide. 9. A method of manufacturing a semiconductor device, the method comprising: removing a developer from a photoresist, the removing the developer leaving behind a residue; andgenerating a repulsive force between the photoresist and the residue without removing the photoresist. 10. The method of claim 9, wherein the generating the repulsive force between the photoresist and the residue further comprises applying a solution with a pH greater than 7 onto a surface of the photoresist. 11. The method of claim 10, wherein the solution further comprises: a neutral solvent; andan alkaline component. 12. The method of claim 11, wherein the alkaline component comprises guanidinium. 13. The method of claim 11, wherein the alkaline component comprises sodium hydroxide. 14. The method of claim 11, wherein the alkaline component comprises calcium hydroxide. 15. A method of manufacturing a semiconductor device, the method comprising: applying a photoresist to a substrate;developing the photoresist to form a patterned photoresist; andmodifying terminal groups of the patterned photoresist using an alkaline environment, wherein the alkaline environment is applied by simultaneously applying: a neutral solvent with dissolved carbon dioxide; andan alkaline chemical, wherein the alkaline chemical is applied to the patterned photoresist separately from the neutral solvent. 16. The method of claim 15, further comprising modifying terminal groups of a residue located on the patterned photoresist. 17. The method of claim 16, wherein the modifying the terminal groups of the patterned photoresist modifies the terminal groups of the patterned photoresist to have a first charge and the modifying the terminal groups of the residue modifies the terminal groups of the residue to have the first charge. 18. The method of claim 16, further comprising obtaining a desired pH of the alkaline environment by setting a relative flow rate between the neutral solvent and the alkaline chemical. 19. The method of claim 15, wherein the alkaline environment is applied by simultaneously applying a cleaning surfactant with the neutral solvent and the alkaline chemical. 20. The method of claim 19, wherein the alkaline environment is applied by simultaneously applying a cleaning additive with the neutral solvent and the alkaline chemical.

이 특허에 인용된 특허 (78)

Maeda,Katsumi; Iwasa,Shigeyuki; Nakano,Kaichiro; Hasegawa,Etsuo, (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it.
상세보기
Roberts, William; Strobl, Marlene; Williams, Paul; Guerrero, Douglas J.; Martin, Alice F., Anti-reflective coating conformality control.
상세보기
Sinta Roger F. ; Adams Timothy G. ; Mori James Michael, Antireflective coating compositions.
상세보기
Yao, Huirong; Lin, Guanyang; Yin, Jian; Wu, Hengpeng; Neisser, Mark; Dammel, Ralph, Antireflective coating compositions.
상세보기
Lin, Burn Jeng, Apparatus for method for immersion lithography.
상세보기
Houlihan, Francis M.; Miyazaki, Shinji; Neisser, Mark O.; Dioses, Alberto D.; Oberlander, Joseph E., Bottom antireflective coating compositions.
상세보기
Takata, Yoshiyuki; Moriuma, Hiroshi, Chemical amplifying type positive resist composition.
상세보기
Thackeray, James W.; Wayton, Gerald B.; Szmanda, Charles R., Coating compositions for use with an overcoated photoresist.
상세보기
Vohra, Vaishali Raghu; Thackeray, James W.; Wayton, Gerald B., Coating compositions for use with an overcoated photoresist.
상세보기
Kudo, Takanori; Padmanaban, Munirathna; Dammel, Ralph R., Composition for coating over a photoresist pattern.
상세보기
Yoshimura, Nakaatsu; Konno, Yousuke, Composition for forming resist lower layer film.
상세보기
Wheland, Robert Clayton; French, Roger Harquail; Schadt, III, Frank Leonard; Zumsteg, Jr., Frederick C., Copolymers for photoresists and processes therefor.
상세보기
Wakiya Kazumasa,JPX ; Kobayashi Masakazu,JPX ; Nakayama Toshimasa,JPX, Developer solution for photolithographic patterning.
상세보기
Watanabe Takeru,JPX ; Kinsho Takeshi,JPX ; Nishi Tsunehiro,JPX ; Nakashima Mutsuo,JPX ; Hasegawa Koji,JPX ; Hatakeyama Jun,JPX, Ester compounds, polymers, resist composition and patterning process.
상세보기
Bowden Murrae J. S. (Summit NJ) Thompson Larry F. (Gillette NJ), Fabrication based on radiation sensitive resists and related products.
상세보기
Vallee Alain,CAX ; Armand Michel,CAX ; Ollivrin Xavier,FRX ; Michot Christophe,FRX, Fluorinated ionic sulfonylimides and sulfonylmethylides, process of preparing same and use thereof as photoinitiators.
상세보기
Chang,Vencent; Liu,George; Chen,Norman, Immersion lithography process and mask layer structure applied in the same.
상세보기
Iftime, Gabriel; Kazmaier, Peter M.; Norsten, Tyler B., Inkless reimageable printing paper and method.
상세보기
Dierichs, Marcel Mathijs Theodore Marie; Donders, Sjoerd Nicolaas Lambertus; Jacobs, Johannes Henricus Wilhelmus; Jansen, Hans; Loopstra, Erik Roelof; Mertens, Jeroen Johannes Sophia Maria; Stavenga, Marco Koert; Streefkerk, Bob; Verhagen, Martinus Cornelis Maria; Seuntiens-Gruda, Lejla, Lithographic apparatus and device manufacturing method.
상세보기
Lof, Joeri; Derksen, Antonius Theodorus Anna Maria; Hoogendam, Christiaan Alexander; Kolesnychenko, Aleksey; Loopstra, Erik Roelof; Modderman, Theodorus Marinus; Mulkens, Johannes Catharinus Hubertus, Lithographic apparatus and device manufacturing method.
상세보기
Mertens, Jeroen Johannes Sophia Maria; Hoogendam, Christiaan Alexander; Jansen, Hans; Tinnemans, Patricius Aloysius Jacobus; Van Den Schoor, Leon Joseph Maria; Donders, Sjoerd Nicolaas Lambertus; Streefkerk, Bob, Lithographic apparatus and device manufacturing method.
상세보기
Streefkerk, Bob; Derksen, Antonius Theodorus Anna Maria; Lof, Joeri; Simon, Klaus; Straaijer, Alexander, Lithographic apparatus and device manufacturing method.
상세보기
Yeh, Hsiao-Wei; Shih, Jen-Chieh; Chen, Jian-Hong, Material and method for photolithography.
상세보기
Endo, Kotaro; Yoshida, Masaaki; Ishizuka, Keita, Material for formation of resist protection film and method of forming resist pattern therewith.
상세보기
Ishizuka, Keita; Wakiya, Kazumasa; Endo, Kotaro; Yoshida, Masaaki, Material for forming resist protective film for use in liquid immersion lithography process and method for forming resist pattern using the protective film.
상세보기
Holmes,Steven J.; Hakey,Mark C.; Furukawa,Toshiharu; Horak,David V., Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system.
상세보기
Batchelder William T. ; Parodi Michael L. ; Biche Michael R., Method and apparatus for curing photoresist.
상세보기
Lee, Fong-Cheng; Chang, Ching-Yu, Method and photoresist with zipper mechanism.
상세보기
Brault Robert G. (Santa Monica CA) Miller Leroy J. (Canoga Park CA), Method for developing poly(methacrylic anhydride) resists.
상세보기
Brandl,Stefan, Method for reducing lithography pattern defects.
상세보기
Tsubaki, Hideaki, Method of forming patterns.
상세보기
Tsubaki, Hideaki, Method of forming patterns.
상세보기
Canavello Benjamin J. (Stony Point NY) Hatzakis Michael (Ossining NY) Shaw Jane M. (Ridgefield CT), Method of modifying the development profile of photoresists.
상세보기
Makiyama, Kozo; Sawada, Ken, Method of processing resist, semiconductor device, and method of producing the same.
상세보기
Itatani, Hiroshi; Matsumoto, Shunichi, Negative photosensitive polyimide composition and method for forming image the same.
상세보기
Wu, Chung-Jen, Negative photosensitive polyimide polymer and uses thereof.
상세보기
Takasu, Ryoichi; Miyairi, Miwa; Iwashita, Jun; Tachikawa, Toshikazu, Negative resist composition.
상세보기
Allen,Robert David; Breyta,Gregory; Brock,Phillip Joe; DiPietro,Richard A.; Medeiros,David R.; Sooriyakumaran,Ratnam, Negative resists based on acid-catalyzed elimination of polar molecules.
상세보기
Hagen Sigurd Guenter,DEX, Negative working photoresist composition based on polyimide primers.
상세보기
Fan ; Roxy N., Oxygen barrier layers for photopolymerizable elements.
상세보기
Tsubaki, Hideaki, Pattern forming method.
상세보기
Tarutani, Shinji; Tsubaki, Hideaki; Mizutani, Kazuyoshi; Wada, Kenji; Hoshino, Wataru, Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method.
상세보기
Wang, Chien-Wei; Chang, Ching-Yu, Patterning process and chemical amplified photoresist composition.
상세보기
Marrocco ; III Matthew L. ; Kaji Makoto,JPX, Photoimageable compositions comprising polyquinoline polymer and diazo compound.
상세보기
West Paul R. (Malta NY) Davis Gary C. (Albany NY), Photolithographic method and combination including barrier layer.
상세보기
Tabarelli Werner (Schlossstr. 5 Vaduz LIX FL-9490) Lbach Ernst W. (Tonagass 374 Eschen LIX FL-9492), Photolithographic method for the manufacture of integrated circuits.
상세보기
Padmanaban,Munirathna; Kudo,Takanori; Lee,Sangho; Dammel,Ralph R.; Rahman,M. Dalil, Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds.
상세보기
Goodall, Brian L.; Jayaraman, Saikumar; Shick, Robert A.; Rhodes, Larry F., Photoresist compositions comprising polycyclic polymers with acid labile pendant groups.
상세보기
Wang, Wen-Yun; Chang, Ching-Yu, Photoresist defect reduction system and method.
상세보기
Bantu Nageshwer R. (Endicott NY) Bhatt Anilkumar C. (Johnson City NY) Bhatt Ashwinkumar C. (Endicott NY) Kotylo Joseph A. (Binghamton NY) Jones Gerald W. (Johnson City NY) Owen Robert J. (Binghamton , Photoresist develop and strip solvent compositions and method for their use.
상세보기
Wang, Hsien-Cheng; Lin, Chin-Hsiang; Lee, Heng-Jen; Chang, Ching-Yu; Lin, Hua-Tai; Lin, Burn Jeng, Photoresist materials and photolithography processes.
상세보기
Namiki Tomizo (Asaka JPX) Shinozaki Fumiaki (Asaka JPX) Ikeda Tomoaki (Asaka JPX), Photosensitive image forming material and an image forming method using same.
상세보기
Shinozaki Fumiaki (Shizuoka JPX) Suzuki Kazuo (Shizuoka JPX) Suzuki Tamotsu (Shizuoka JPX) Namiki Tomizo (Shizuoka JPX) Tago Tomohisa (Shizuoka JPX) Totsuka Mikio (Shizuoka JPX), Photosensitive material with alkali-in soluble barrier layer.
상세보기
Nakano Kaichiro,JPX ; Iwasa Shigeyuki,JPX ; Hasegawa Etsuo,JPX, Photosensitive resin and method for patterning by use of the same.
상세보기
Forman,Robert S.; Steeper,Jill E.; Huenger,Eric C., Plating method.
상세보기
Kim, Sang Woo; Park, Chan Hyo; Kim, Kyung Jun; Seong, Hye Ran; Shin, Se Jin; Oh, Dong Hyun, Polyimide-based polymers, copolymers thereof and positive type photoresist compositions comprising the same.
상세보기
Ohashi, Masaki; Ohsawa, Youichi; Kinsho, Takeshi; Hatakeyama, Jun; Tachibana, Seiichiro, Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process.
상세보기
Barclay George G. ; Yueh Wang, Polymers containing oxygen and sulfur alicyclic units and photoresist compositions comprising same.
상세보기
Itatani, Hiroshi; Matsumoto, Shunichi, Positive photosensitive poliymide composition.
상세보기
Hatanaka, Tadashi; Nakayama, Tomonari; Nihira, Takayasu, Positive photosensitive polyimide resin composition.
상세보기
Yukawa Masahiko (Funabashi JPX) Abe Toyohiko (Funabashi JPX) Kohtoh Noriaki (Funabashi JPX), Positive photosensitive polyimide resin composition comprising an o-quinone diazide as a photosensitive compound.
상세보기
Ito Hiroshi (San Jose CA) Willson Carlton G. (San Jose CA) Frechet Jean M. J. (Ottawa CAX), Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile grou.
상세보기
Wu, Hengpeng; Neisser, Mark O.; Ding-Lee, Shuji S; Hishida, Aritaka; Oberlander, Joseph E.; Toukhy, Medhat E., Positive-working photoimageable bottom antireflective coating.
상세보기
Chandross Edwin Arthur ; Nalamasu Omkaram ; Reichmanis Elsa ; Taylor Gary Newton ; Thompson Larry Flack, Process for fabricating a device.
상세보기
Weissenrieder,Karl Stefan; Hirnet,Alexander; Pazidis,Alexandra; Schuster,Karl Heinz; Zaczek,Christoph; Lill,Michael; Scheible, legal representative,Guenter; Schink,Harald; Brotsack,Markus; Loering,Ulrich; Gruner,Toralf; Scheible,Patrick, Projection objective for immersion lithography.
상세보기
Yamada, Kenji; Bessho, Nobuo; Kumano, Atsushi; Konno, Keiji, Radiation sensitive refractive index changing composition and refractive index changing method.
상세보기
Suwa Mitsuhito,JPX ; Iwasawa Haruo,JPX ; Kajita Toru,JPX ; Iwanaga Shin-ichiro,JPX, Radiation sensitive resin composition.
상세보기
Holmer Arthur Edward ; Litwin Michael Mark ; Albaugh Kevin Bruce, Removal of carbon from substrate surface.
상세보기
William H. Mullee ; Maximilian A. Biberger ; Paul E. Schilling, Removal of photoresist and residue from substrate using supercritical carbon dioxide process.
상세보기
Endo,Kotaro; Yoshida,Masaaki; Hirayama,Taku; Tsuji,Hiromitsu; Ogata,Toshiyuki; Sato,Mitsuru, Resist composition for liquid immersion exposure process and method of forming resist pattern therewith.
상세보기
Maesawa,Tsuneaki; Urano,Fumiyoshi, Resist compositions.
상세보기
Nozaki, Koji; Kozawa, Miwa, Resist cover film-forming material, process for forming resist pattern, semiconductor device and process for manufacturing the same.
상세보기
Endo,Masayuki; Sasago,Masaru, Semiconductor manufacturing apparatus and pattern formation method.
상세보기
Huang,Wu Song S.; Burns,Sean D.; Varanasi,Pushkara Rao, Silicon containing TARC/barrier layer.
상세보기
Makino, Fuminori, Stage apparatus.
상세보기
Chang, Ching-Yu; Chiu, Chih-Cheng, Surface switchable photoresist.
상세보기
Brunsvold William R. (22 Clover Hill Rd. Poughkeepsie NY 12603) Chow Ming-Fea (Beyer Dr. Poughguag NY 12570) Conley Willard E. (16 Chadeayne Ave. Cornwall NY 12518) Crockatt Dale M. (29 Warren St. So, Thermally stable photoresists with high sensitivity.
상세보기
Ho,Bang Chein; Chen,Jian Hong; Takano,Yusuke; Lu,Ping Hung, Water soluble negative tone photoresist.
상세보기

IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
저장형식	Text(ASCII format) Excel format PIAS분석(.xls)
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

연합인증

[미국특허] Photoresist defect reduction system and method 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

이 특허에 인용된 특허 (78)

관련 콘텐츠

특허 원문 보기

IPC 상위 출원인

이 특허와 함께 이용한 콘텐츠

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트

연합인증

[미국특허] Photoresist defect reduction system and method 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

전체(0) 논문(0) 특허(0) 보고서(0)

전체(0) 논문(0) 특허(0) 보고서(0)

이 특허에 인용된 특허 (78)

관련 콘텐츠

특허 원문 보기

IPC 상위 출원인

이 특허와 함께 이용한 콘텐츠

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트